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Metal-insulator-metal (MIM) capacitor and fabrication method for making the same

  • US 6,977,198 B2
  • Filed: 01/06/2005
  • Issued: 12/20/2005
  • Est. Priority Date: 11/28/2003
  • Status: Active Grant
First Claim
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1. A method for fabricating a metal-insulator-metal (MIM) capacitor, comprising the steps of:

  • providing a substrate;

    forming, in the order of, a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a third metal layer, and a cap layer over the substrate;

    etching the cap layer, the third metal layer, the second dielectric layer, the second metal layer, and the first dielectric layer to form an upper capacitor structure consisting of a second metal plate, a second capacitor dielectric layer, and third metal plate;

    partially covering the upper capacitor structure with a photo mask that defines a first metal plate to formed in the underlying first metal layer;

    simultaneously etching the first metal layer, a portion of the cap layer atop the second metal plate and the second metal plate of the upper capacitor structure that are not covered by the photo mask; and

    stripping the photo mask.

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