Dual band power amplifier module for wireless communication devices

• US 6,977,551 B2
• Filed: 02/24/2005
• Issued: 12/20/2005
• Est. Priority Date: 07/19/2002
• Status: Active Grant

• Current Assignee: Micro Mobio Corporation
• Original Assignee: Micro Mobio
• Inventors: Wang, Weiping, Ichitsubo, Ikuroh, Wang, Guan-Wu
• Primary Examiner(s): Choe, Henry
• Application Number:
  US11/064,261
• Publication Number:
  US 20050140436A1
• Time in Patent Office: 299 Days
• Field of Search: 330/279, 330/129, 330/136, 455/126
• US Class Current: 330/279
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 Nickel [Ni]
• CPC Class Codes: H01L 2924/01031 Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/04953 TaN
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/10336 : Aluminium gallium arsenide [AlGaAs]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H03F 1/0272 : by using a signal derived from the output signal
• CPC Class Codes: H03G 3/3042 : in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04

Abstract

A power amplifier module for amplifying radio frequency signals includes first and second radio frequency power amplifiers with one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal and to output an amplified radio frequency signal; first and second power-sensing circuits each coupled to said first and second radio frequency power amplifiers and adapted to receive each amplified radio frequency signal and to output the power-sensing control signal; and control logic that receives and processes the power-sensing control signals, and outputs a processed power-sensing control signal in response to each quality or magnitude of each amplified radio frequency signal.

Claims

1. A power amplifier module for amplifying radio frequency signals, comprising:

a) first and second radio frequency power amplifiers each including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal, and to output an amplified radio frequency signal;

b) first and second power-sensing circuits each coupled to said first and second radio frequency power amplifiers and adapted to receive each amplified radio frequency signal and to output the power-sensing control signal; and

c) control logic that receives and processes the power-sensing control signals, and outputs a processed power-sensing control signal in response to each quality or magnitude of each amplified radio frequency signal, wherein the quality or magnitude of the amplified radio frequency signal includes Error Vector Magnitude (EVM), Bit Error Rate (BER), or Packet Error Rate (PER).

2. The module of claim 1 wherein the quality of the amplified radio frequency signal includes one or more of inter-modulation components of the amplified radio frequency signal.

3. The module of claim 1 wherein the magnitude of the amplified radio frequency signal includes one or more of the gain, the voltage, the current, and the power of the amplified radio frequency signal.

4. The module of claim 1 wherein the radio frequency power amplifier outputs the amplified radio frequency signal under the control of a bias signal.

5. The module of claim 4 wherein the bias signal is controlled by the power-sensing control signal.

6. The module of claim 1, wherein the impedance of the external circuit that provides the input radio frequency signal is matched by an input impedance matching circuit.

7. The module of claim 1, wherein the impedance of external circuit that receives the amplified radio frequency signal is matched by an output impedance matching circuit.

8. The module of claim 1, further comprising

an electrically conductive base;

and

a multi-layer three dimensional substrate having a conductive layer adapted to bond with the electrically conductive base.

9. The module of claim 8 wherein the conductive layer includes a central metal land adapted to bond with the electrically conductive base of the electronic circuit, said central metal land connected with metal pins at the corners of the conductive layer.

10. The module of claim 9 wherein the central metal land and the metal pins of the conductive layer includes a plurality of via holes through the upper layers in the multilayer three-dimensional substrate.

11. A wireless communication device for transmitting and receiving radio frequency signals, comprising

a) first and second power amplifier module for amplifying radio frequency signals, each comprising:

i) a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal, and to output an amplified radio frequency signal; and

b) first and second power-sensing circuits coupled to said first and second power amplifier modules, said power-sensing circuits including a control logic adapted to receive and process the amplified radio frequency signals and to output the processed power-sensing control signal in response to each quality or a magnitude of the amplified radio frequency signal, and

c) first and second antennas adapted to provide the input radio frequency signals to the power amplifier modules and to receive the output radio frequency signals from the power amplifier modules wherein the quality or magnitude of the amplified radio frequency signal includes Error Vector Magnitude (EVM), Bit Error Rate (BER), or Packet Error Rate (PER).

12. The module of claim 11 wherein the quality of the amplified radio frequency signal includes one or more of inter-modulation components of the amplified radio frequency signal.

13. The module of claim 11 wherein the magnitude of the amplified radio frequency signal includes one or more of the gain, the voltage, the current, and the power of the amplified radio frequency signal.

14. The module of claim 11, further including an input impedance matching circuit and/or an output impedance matching circuit.

15. The module of claim 11, further including a base band processor and/or a RF transceiver.

16. A power amplifier module for amplifying radio frequency signals, comprising:

a) an electronic circuit including

i) first and second radio frequency power amplifiers each including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a power-sensing control signal, and to output an amplified radio frequency signal;

ii) first and second power-sensing circuits coupled to said first and second radio frequency power amplifiers and each adapted to receive the amplified radio frequency signal and to output the power-sensing control signal;

iii) an electrically conductive base; and

b) a three dimensional substrate having a conductive layer adapted to bond with the electrically conductive base.

17. The module of claim 16 wherein the conductive layer includes a central metal land adapted to bond with the electrically conductive base of the electronic circuit, said central metal land being connected with metal pins at the corners of the conductive layer.

18. The module of claim 16 wherein the central metal land and the metal pins of the conductive layer includes a plurality of via holes through the upper layers in the three-dimensional substrate.