Methods, complexes, and system for forming metal-containing films

• US 6,979,370 B2
• Filed: 12/19/2002
• Issued: 12/27/2005
• Est. Priority Date: 10/02/1996
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Vaartstra, Brian A.
• Primary Examiner(s): KIELIN, ERIK J
• Application Number:
  US10/325,313
• Publication Number:
  US 20030119312A1
• Time in Patent Office: 1,104 Days
• Field of Search: 438503-509, 438/681, 118/726, 987/2, 546/2, 556/1, 556/175, 556/176
• US Class Current: 118/726
• CPC Class Codes: C07F 5/00 Compounds containing elements of Groups 3 or 13 of the Periodic Table
• CPC Class Codes: C07F 5/065 compounds with an Al-H linkage
• CPC Class Codes: C07F 5/066 compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/301 AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Claims

1. A chemical vapor deposition system comprising:

a deposition chamber having a substrate positioned there;

a vessel containing a precursor comprising one or more hydride complexes of the formulas;

wherein;

M is a Group IIIA metal;

each R¹, R², R³, R⁴, and R⁵ group is independently H or a (C₁–

C₃₀)organic group,

wherein none of the R groups are joined together to form ring systems, at least one of R³ and R⁴ is H, and R⁵ is H; and

n=1 to 6; and

a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.

2. A chemical vapor deposition system comprising:

a deposition chamber having a substrate positioned therein;

a vessel containing a liquid precursor comprising one or more hydride complexes of the formulas;

wherein;

M is a Group IIIA metal;

each R¹, R², R³, R⁴, and R⁵ group is independently H or a (C₁–

C₃₀)organic group,

wherein none of the R groups are joined together to form ring systems, at least one of R³ and R⁴ is H, and R⁵ is H; and

n=1 to 6; and

a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.

3. A chemical vapor deposition system comprising:

a deposition chamber having a semiconductor substrate positioned therein;

a vessel containing a precursor comprising one or more hydride complexes of the formulas;

wherein;

M is a Group IIIA metal;

each R¹, R², R³, R⁴, and R⁵ group is independently H or a (C₁–

C₃₀)organic group,

wherein none of the R groups are joined together to form ring systems, at least one of R³ and R⁴ is H, and R⁵ is H; and

n=1 to 6; and

a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.

4. A chemical vapor deposition system comprising:

a deposition chamber having a semiconductor substrate positioned therein;

a vessel containing a liquid precursor comprising one or more hydride complexes of the formulas;

wherein;

M is a Group IIIA metal;

each R¹, R², R³, R⁴, and R⁵ group is independently H or a (C₁–

C₃₀) organic group,

wherein none of the R groups are joined together to form ring systems, at least one of R³ and R⁴ is H, and R⁵ is H; and

n=1 to 6; and

a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.