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Method of manufacturing semiconductor light emitting device and oxidation furnace

  • US 6,979,581 B2
  • Filed: 12/13/2002
  • Issued: 12/27/2005
  • Est. Priority Date: 12/13/2001
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor light emitting device comprising steps of;

  • (a) forming a semiconductor laminated part comprising a light emitting layer forming portion and a semiconductor layer for selective oxidation for forming a current injection region on a substrate,(b) etching away a part of said semiconductor laminated part such that said current injection region and its peripheral region would be left in mesa-shape,(c) forming a predetermined range of current injection region by oxidizing said semiconductor layer for selective oxidation etched in mesa-shape from its periphery toward its center, while observing by a microscope an oxidation condition of said semiconductor layer for selective oxidation from a surface side of said semiconductor laminated part,wherein the step of oxidizing said semiconductor layer for selective oxidation further comprises steps of;

    setting said substrate on which said semiconductor laminated part is grown in a chamber, andoxidizing said semiconductor layer for selective oxidation by supplying vapor which is stable at about 400°

    C. to 500°

    C. around said semiconductor layer for selective oxidation; and

    (d) forming electrodes for electrical connection on both sides of said semiconductor laminated part; and

    wherein a vapor supply pipe having a heater is provided on said chamber and said vapor is supplied around said semiconductor layer for selective oxidation by introducing a vapor into said chamber through said vapor supply pipe.

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