Method of manufacturing semiconductor light emitting device and oxidation furnace
First Claim
1. A method of manufacturing a semiconductor light emitting device comprising steps of;
- (a) forming a semiconductor laminated part comprising a light emitting layer forming portion and a semiconductor layer for selective oxidation for forming a current injection region on a substrate,(b) etching away a part of said semiconductor laminated part such that said current injection region and its peripheral region would be left in mesa-shape,(c) forming a predetermined range of current injection region by oxidizing said semiconductor layer for selective oxidation etched in mesa-shape from its periphery toward its center, while observing by a microscope an oxidation condition of said semiconductor layer for selective oxidation from a surface side of said semiconductor laminated part,wherein the step of oxidizing said semiconductor layer for selective oxidation further comprises steps of;
setting said substrate on which said semiconductor laminated part is grown in a chamber, andoxidizing said semiconductor layer for selective oxidation by supplying vapor which is stable at about 400°
C. to 500°
C. around said semiconductor layer for selective oxidation; and
(d) forming electrodes for electrical connection on both sides of said semiconductor laminated part; and
wherein a vapor supply pipe having a heater is provided on said chamber and said vapor is supplied around said semiconductor layer for selective oxidation by introducing a vapor into said chamber through said vapor supply pipe.
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Abstract
A sample stand is set in a chamber provided with an observation window on its upper surface and a heater for heating a sample is provided in the vicinity of the sample stand. Then, a microscope, a camera and a television monitor are connected and mounted outside the observation window of the chamber. The microscope is mounted such that a specific layer of the sample is focused on and can be observed. According to a manufacturing method of the preset invention, oxidation treatment is performed in such equipment while an oxidation process of the specific layer (semiconductor layer for selective oxidation) of the sample is observed. As a result, the amount of oxidation of the semiconductor layer for selective oxidation can be strictly controlled, a semiconductor light emitting device which restricts a current into a certain region can be obtained with high yield ratio, and there is obtained an oxidation furnace which can precisely control the amount of oxidation of the semiconductor layer for selective oxidation.
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Citations
16 Claims
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1. A method of manufacturing a semiconductor light emitting device comprising steps of;
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(a) forming a semiconductor laminated part comprising a light emitting layer forming portion and a semiconductor layer for selective oxidation for forming a current injection region on a substrate, (b) etching away a part of said semiconductor laminated part such that said current injection region and its peripheral region would be left in mesa-shape, (c) forming a predetermined range of current injection region by oxidizing said semiconductor layer for selective oxidation etched in mesa-shape from its periphery toward its center, while observing by a microscope an oxidation condition of said semiconductor layer for selective oxidation from a surface side of said semiconductor laminated part, wherein the step of oxidizing said semiconductor layer for selective oxidation further comprises steps of; setting said substrate on which said semiconductor laminated part is grown in a chamber, and oxidizing said semiconductor layer for selective oxidation by supplying vapor which is stable at about 400°
C. to 500°
C. around said semiconductor layer for selective oxidation; and(d) forming electrodes for electrical connection on both sides of said semiconductor laminated part; and wherein a vapor supply pipe having a heater is provided on said chamber and said vapor is supplied around said semiconductor layer for selective oxidation by introducing a vapor into said chamber through said vapor supply pipe. - View Dependent Claims (2, 3, 4, 6, 7, 8, 9)
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5. A method of manufacturing a semiconductor light emitting device comprising steps of:
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(a) forming a semiconductor laminated part comprising a light emitting layer forming portion and a semiconductor layer for selective oxidation for forming a current injection region on a substrate, (b) etching away a part of said semiconductor laminated part such that said current injection region and its peripheral region would be left in mesa-shape, (c) forming a predetermined range of current injection region by oxidizing said semiconductor layer for selective oxidation etched in mesa-shape from its periphery toward its center, while observing by a microscope an oxidation condition of said semiconductor layer for selective oxidation from a surface side of said semiconductor laminated part, wherein the step of oxidizing said semiconductor layer for selective oxidation further comprises steps of; setting said substrate on which said semiconductor laminated part is grown in a chamber, and oxidizing said semiconductor layer for selective oxidation by supplying vapor which is stable at about 400°
C. to 500°
C. around said semiconductor layer for selective oxidation; and(d) forming electrodes for electrical connection on both sides of said semiconductor laminated part; and wherein said vapor is supplied around said semiconductor layer for selective oxidation by generating a vapor by a heater in said chamber, wherein the stable vapor temperature is provided by said heater. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification