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Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light

  • US 6,979,605 B2
  • Filed: 11/29/2002
  • Issued: 12/27/2005
  • Est. Priority Date: 11/30/2001
  • Status: Expired due to Term
First Claim
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1. A manufacturing method for a semiconductor device having thin film transistors comprising:

  • forming an amorphous semiconductor film on an insulating surface;

    forming a marker on the amorphous semiconductor film; and

    selectively irradiating a laser light to perform crystallization to a region in which active layers of the thin film transistors are formed, based on information on arrangement of the thin film transistors with the marker used as a reference, wherein;

    the laser light is a laser light of pulse oscillation and emitted from a solid laser oscillation apparatus using semiconductor laser excitation;

    a direction in which the laser light is moved on the amorphous semiconductor film is parallel to a direction in which carriers move in channel formation regions in the thin film transistors; and

    the amorphous semiconductor film is melted over entire thickness thereof through irradiation of the laser light.

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