Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light
First Claim
1. A manufacturing method for a semiconductor device having thin film transistors comprising:
- forming an amorphous semiconductor film on an insulating surface;
forming a marker on the amorphous semiconductor film; and
selectively irradiating a laser light to perform crystallization to a region in which active layers of the thin film transistors are formed, based on information on arrangement of the thin film transistors with the marker used as a reference, wherein;
the laser light is a laser light of pulse oscillation and emitted from a solid laser oscillation apparatus using semiconductor laser excitation;
a direction in which the laser light is moved on the amorphous semiconductor film is parallel to a direction in which carriers move in channel formation regions in the thin film transistors; and
the amorphous semiconductor film is melted over entire thickness thereof through irradiation of the laser light.
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Accused Products
Abstract
Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal having a large grain size can be continuously formed through super lateral growth that is artificially controlled and substrate processing efficiency during a laser crystallization process can be increased. In the manufacturing method for a semiconductor device, instead of performing laser irradiation on an entire semiconductor film within a substrate surface, a marker as a reference for positioning is formed so as to crystallize at least an indispensable portion at minimum. Thus, a time period required for laser crystallization can be reduced to make it possible to increase a processing speed for a substrate. The above structure is applied to a conventional SLS method, so that it is possible to solve a problem inherent to the conventional SLS method, in that the substrate processing efficiency is poor.
182 Citations
30 Claims
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1. A manufacturing method for a semiconductor device having thin film transistors comprising:
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forming an amorphous semiconductor film on an insulating surface;
forming a marker on the amorphous semiconductor film; and
selectively irradiating a laser light to perform crystallization to a region in which active layers of the thin film transistors are formed, based on information on arrangement of the thin film transistors with the marker used as a reference, wherein;
the laser light is a laser light of pulse oscillation and emitted from a solid laser oscillation apparatus using semiconductor laser excitation;
a direction in which the laser light is moved on the amorphous semiconductor film is parallel to a direction in which carriers move in channel formation regions in the thin film transistors; and
the amorphous semiconductor film is melted over entire thickness thereof through irradiation of the laser light. - View Dependent Claims (2, 3, 4, 5)
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6. A manufacturing method for a semiconductor device having thin film transistors comprising:
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forming an amorphous semiconductor film on an insulating surface;
forming a marker on the amorphous semiconductor film;
determining a direction in which a spot of a laser light is moved so as to be parallel to a direction in which carriers move in channel formation regions of the thin film transistors, based on information on arrangement of the thin film transistors with the marker used as a reference; and
selectively irradiating the laser light to perform crystallization to a region in which active layers of the thin film transistors are formed, based on information on arrangement of the thin film transistors with the marker used as a reference, wherein;
the laser light is a laser light of pulse oscillation and emitted from a solid laser oscillation apparatus using semiconductor laser excitation; and
the amorphous semiconductor film is melted over entire thickness thereof through irradiation of the laser light. - View Dependent Claims (7, 8, 9, 10)
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11. A manufacturing method for a semiconductor device having thin film transistors comprising:
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forming an amorphous semiconductor film on an insulating surface;
forming a marker on the amorphous semiconductor film; and
selectively irradiating a laser light to perform crystallization to a region in which active layers of the thin film transistors are formed, based on information on arrangement of the thin film transistors with the marker used as a reference, wherein;
the laser light is a laser light of pulse oscillation and emitted from a solid laser oscillation apparatus using semiconductor laser excitation; and
a direction in which the laser light is moved on the amorphous semiconductor film is parallel to a direction in which carriers move in channel formation regions in the thin film transistors. - View Dependent Claims (12, 13, 14, 15)
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16. A manufacturing method for a semiconductor device having thin film transistors comprising:
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forming an amorphous semiconductor film on an insulating surface;
forming a marker on the amorphous semiconductor film;
determining a direction in which a spot of a laser light is moved so as to be parallel to a direction in which carriers move in channel formation regions of the thin film transistors, based on information on arrangement of the thin film transistors with the marker used as a reference; and
selectively irradiating the laser light to perform crystallization to a region in which active layers of the thin film transistors are formed, based on information on arrangement of the thin film transistors with the marker used as a reference, wherein the laser light is a laser light of pulse oscillation and emitted from a solid laser oscillation apparatus using semiconductor laser excitation. - View Dependent Claims (17, 18, 19, 20)
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21. A manufacturing method for a semiconductor device having thin film transistors comprising:
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forming an amorphous semiconductor film on an insulating surface;
forming a marker on the amorphous semiconductor film; and
selectively irradiating a laser light to perform crystallization to a region in which active layers of the thin film transistors are formed, based on information on arrangement of the thin film transistors with the marker used as a reference, wherein;
the laser light is emitted from a solid laser oscillation apparatus using semiconductor laser excitation;
a direction in which the laser light is moved on the amorphous semiconductor film is parallel to a direction in which carriers move in channel formation regions in the thin film transistors; and
the amorphous semiconductor film is melted over entire thickness thereof through irradiation of the laser light. - View Dependent Claims (22, 23, 24, 25)
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26. A manufacturing method for a semiconductor device having thin film transistors comprising:
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forming an amorphous semiconductor film on an insulating surface;
forming a marker on the amorphous semiconductor film;
determining a direction in which a spot of a laser light is moved so as to be parallel to a direction in which carriers move in channel formation regions of the thin film transistors, based on information on arrangement of the thin film transistors with the marker used as a reference; and
selectively irradiating the laser light to perform crystallization to a region in which active layers of the thin film transistors are formed, based on information on arrangement of the thin film transistors with the marker used as a reference, wherein;
the laser light is emitted from a solid laser oscillation apparatus using semiconductor laser excitation; and
the amorphous semiconductor film is melted over entire thickness thereof through irradiation of the laser light. - View Dependent Claims (27, 28, 29, 30)
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Specification