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Photoelectron emission microscope for wafer and reticle inspection

  • US 6,979,819 B2
  • Filed: 12/14/2001
  • Issued: 12/27/2005
  • Est. Priority Date: 11/30/2001
  • Status: Expired due to Term
First Claim
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1. A method of imaging a substrate, comprising:

  • a) exposing said substrate to an influx of relatively high-energy electrons, said high-energy electrons having an energy selected to cause secondary electrons to leave said substrate,b) exposing said substrate to an influx of relatively low-energy electrons, said electrons having both an energy and a current density profile selected to maintain surface charge present on said substrate at a predetermined level,c) filtering said secondary electrons and the portion of said relatively low-energy electrons which are reflected from the surface of said substrate, after proper selection of the angle of incidence for the electron beams, in order to select most or all of said secondary electrons which are emitted at angles other than perpendicular to the substrate and most or all of said reflected electrons which are scattered away from the specular angle, and to reject most or all of said secondary electrons which are emitted at an angle perpendicular to the substrate and most or all of said reflected electrons which are scattered at the specular angle,d) focusing said selected secondary electrons and said selected reflected electrons to create an image of said substrate in the plane of a detector,e) detecting said selected secondary electrons and said selected reflected electrons, thereby imaging a portion of said substrate.

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