High speed low power magnetic devices based on current induced spin-momentum transfer

• US 6,980,469 B2
• Filed: 08/19/2003
• Issued: 12/27/2005
• Est. Priority Date: 08/19/2003
• Status: Expired due to Term

• Current Assignee: New York University
• Original Assignee: New York University
• Inventors: Özyilmaz, Barbaros, Kent, Andrew, Gonzalez Garcia, Enrique
• Primary Examiner(s): Nguyen, Viet Q.
• Application Number:
  US10/643,762
• Publication Number:
  US 20050041462A1
• Time in Patent Office: 861 Days
• Field of Search: 365/171, 365/173, 365/158, 365/97, 365/225.5, 365/66, 257/421
• US Class Current: 365/171
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 11/5607 using magnetic storage elements
• CPC Class Codes: H01F 10/123 having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
• CPC Class Codes: H01F 10/325 the spacer being noble metal
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H01L 29/82 controllable by variation of the magnetic field applied to the device
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers. A current is applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.

Claims

1. A magnetic device comprising:

a pinned magnetic layer with a magnetization vector with a fixed magnetization direction;

a free magnetic layer with at least one magnetization vector with a changeable magnetization direction;

a first non-magnetic layer spatially separating said free magnetic layer and said pinned magnetic layer;

a read-out magnetic layer with a magnetization vector with a fixed magnetization direction; and

a second non-magnetic layer that spatially separates said free magnetic layer and said read-out magnetic layer such that the mutual magnetic interaction between said free magnetic layer and said read-out magnetic layer is minimized.

2. The magnetic device according to claim 1, wherein one of said magnetization directions of said pinned magnetic layer, said free magnetic layer, and said read-out magnetic layer lies along an axis which is different than at least one of axes along which said other magnetization directions lie.

3. The magnetic device according to claim 1, wherein:

said fixed magnetization direction of said pinned magnetic layer is perpendicular to a plane of said free magnetic layer; and

said changeable magnetization direction of said free magnetic layer is perpendicular to an axis extending longitudinally through said magnetic device.

4. The magnetic device according to claim 1, wherein said changeable magnetization direction of said free magnetic layer and said fixed magnetization direction of said read-out layer switch between being in anti-parallel alignment and parallel alignment.

5. The magnetic device according to claim 1, wherein said free magnetic layer has a single magnetization vector with a changeable magnetization vector.

6. The magnetic device according to claim 1, wherein said magnetization direction of said magnetization vector of said free magnetic layer represents a bit of information.

7. The magnetic device according to claim 1, wherein:

said magnetic device is pillar-shaped; and

said pinned magnetic layer, said first non-magnetic layer, said free magnetic layer, said second magnetic layer, and said read-out magnetic layer are less than approximately 200 nm laterally and approximately 1 nm to 50 nm thick.

8. The magnetic device according to claim 1, wherein said pinned magnetic layer, said free magnetic layer, and said read-out magnetic layer are comprised of a member of the group consisting of Co, Ni, Fe, an alloy of Co and Ni, an alloy of Co and Fe, an alloy of Ni and Fe, an alloy of Co, Ni, and Fe, and permalloy Ni1-xFex.

9. The magnetic device according to claim 1, wherein said pinned magnetic layer, said free magnetic layer, and said read-out magnetic layer are comprised of a non-magnetic metal and a member of the group consisting of an alloy of Co and Ni, an alloy of Co and Fe, an alloy of Ni and Fe, an alloy of Co, Ni, and Fe, such that said non-magnetic metal and said member are ferromagnetically ordered at room temperature.

10. The magnetic device according to claim 9, wherein said non-magnetic metal is a member of the group consisting of Cu, Pd, and Pt.

11. The magnetic device according to claim 1, wherein said pinned magnetic layer, said free magnetic layer, and said read-out magnetic layer are comprised of a member of the group consisting of NiMnSb and a conducting magnetic oxide.

12. The magnetic device according to claim 11, wherein said conducting magnetic oxide is either CrO2 or Fe3O4.

13. The magnetic device according to claim 1, wherein said non-magnetic layers are comprised of at least one member of the group consisting of Cu, Cr, Au, Ag, and Al.

33. The magnetic device according to claim 1, wherein the mutual magnetic interaction between said free magnetic layer and said pinned magnetic layer is minimized.

14. A memory system comprising:

a memory cell comprising;

a pinned magnetic layer with a magnetization vector with a fixed magnetization direction;

a free magnetic layer with at least one magnetization vector with a changeable magnetization direction;

a first non-magnetic layer spatially separating said free magnetic layer and said pinned magnetic layer;

a read-out magnetic layer with a magnetization vector with a fixed magnetization direction; and

a second non-magnetic layer that spatially separates said free magnetic layer and said read-out magnetic layer such that the mutual magnetic interaction between said free magnetic layer and said read-out magnetic layer is minimized; and

an electric current source connected to said pinned magnetic layer and said read-out magnetic layer so that an electric current can traverse said memory cell.

15. The memory system according to claim 14, wherein one of said magnetization directions of said pinned magnetic layer, said free magnetic layer, and said read-out magnetic layer lies along an axis which is different than at least one of axes along which said other magnetization directions lie.

16. The memory system according to claim 14, further comprising a means for measuring the resistance between said pinned magnetic layer and said read-out magnetic layer.

17. The memory system according to claim 16, wherein said resistance measuring means comprises a voltmeter connected to said pinned magnetic layer and said read-out magnetic layer.

18. The memory system according to claim 14, wherein said electric current comprises a single current pulse.

19. The memory system according to claim 14, wherein said electric current comprises two current pulses wherein one of said two current pulses is a negative current pulse and the other of said two current pulses is a positive current pulse.

20. The memory system according to claim 14, wherein said electric current is applied in a sub-nanosecond period of time.

34. The memory system according to claim 14, wherein the mutual magnetic interaction between said free magnetic layer and said pinned magnetic layer is minimized.

21. A method of magnetic switching using current-induced spin-momentum transfer, said method comprising the steps of:

applying an electric current to a magnetic device, wherein said electric current comprises two current pulses wherein one of said two current pulses is a negative current pulse and the other of said two current pulses is a positive current pulse, wherein said current applying step occurs in a sub-nanosecond period of time; and

stopping said electric current when a magnetization vector of said magnetic device has rotated 180°

while said electric current is applied.

22. A method of making a memory cell, said method comprising the steps of:

forming a first non-magnetic layer on a pinned magnetic layer, said pinned magnetic layer having a magnetization vector with a fixed magnetization direction;

forming a free magnetic layer with at least one magnetization vector with a changeable magnetization direction on said first non-magnetic layer;

forming a second non-magnetic layer on said free magnetic layer; and

forming a read-out magnetic layer with a magnetization vector with a fixed magnetization direction on said second non-magnetic layer.

23. The method of making a memory cell according to claim 22, wherein one of said magnetization directions of said pinned magnetic layer, said free magnetic layer, and said read-out magnetic layer lies along an axis which is different than at least one of axes along which said other magnetization directions lie.

24. The method of making a memory cell according to claim 22, further comprising the step of:

connecting an electric current source to said pinned magnetic layer and said read-out magnetic layer so that an electric current can traverse said memory cell.

25. The method of making a memory cell according to claim 22, further comprising the step of:

measuring the resistance between said pinned magnetic layer and said read-out magnetic layer.

26. The method of making a memory cell according to claim 25, wherein said resistance measuring step comprises the step of connecting a voltmeter to said pinned magnetic layer and said read-out magnetic layer.

27. The method of making a memory cell according to claim 22, wherein said pinned magnetic layer, said free magnetic layer, and said read-out magnetic layer are comprised of a member of the group consisting of Co, Ni, Fe, an alloy of Co and Ni, an alloy of Co and Fe, an alloy of Ni and Fe, an alloy of Co, Ni, and Fe, and a permalloy Ni1-xFex.

28. The method of making a memory cell according to claim 22, wherein said pinned magnetic layer, said free magnetic layer, and said read-out magnetic layer are comprised of a non-magnetic metal and a member of the group consisting of an alloy of Co and Ni, an alloy of Co and Fe, an alloy of Ni and Fe, an alloy of Co, Ni, and Fe, such that said non-magnetic metal and said member are ferromagnetically ordered at room temperature.

29. The method of making a memory cell according to claim 28, wherein said non-magnetic metal is a member of the group consisting of Cu, Pd, and Pt.

30. The method of making a memory cell according to claim 22, wherein said pinned magnetic layer, said free magnetic layer, and said read-out magnetic layer are comprised of a member of the group consisting of NiMnSb and a conducting magnetic oxide.

31. The method of making a memory cell according to claim 30, wherein said conducting magnetic oxide is either CrO2 or Fe3O4.

32. The method of making a memory cell according to claim 22, wherein said non-magnetic layers are comprised of at least one member of the group consisting of Cu, Cr, Au, Ag, and Al.

35. The method of making a memory cell according to claim 22, wherein said first and said second non-magnetic layers minimize the mutual magnetic interaction between said pinned magnetic layer, said free magnetic layer, and said read-out magnetic layer.