×

Nonvolatile magnetic memory device and manufacturing method thereof

  • US 6,982,446 B2
  • Filed: 12/31/2003
  • Issued: 01/03/2006
  • Est. Priority Date: 01/06/2003
  • Status: Expired due to Fees
First Claim
Patent Images

1. A nonvolatile magnetic memory device comprising;

  • (a) a transistor for selection, formed in a semiconductor substrate,(b) a first insulating interlayer covering the transistor for selection,(c) a first connecting hole formed in a first opening portion formed through the first insulating interlayer, and connected to the transistor for selection,(d) a first wiring being formed on the first insulating interlayer and extending in a first direction,(e) a second insulating interlayer covering the first insulating interlayer and the first wiring,(f) a tunnel magnetoresistance device being formed on the second insulating interlayer and comprising a tunnel barrier and two ferromagnetic layers, said tunnel barrier being sandwiched between said two ferromagnetic layers, one of the ferromagnetic layers including an anti-ferromagnetic layer and a pinned magnetic layer,(g) a third insulating interlayer covering the tunnel magnetoresistance device and the second insulating interlayer,(h) a second wiring being formed on the third insulating interlayer, being electrically connected to one end of the tunnel magnetoresistance device and extending in a second direction different from the first direction, and(i) a second connecting hole formed in a second opening portion formed through the second insulating interlayer, and connected to the first connecting hole,in which an end face of an extending portion of the anti-ferromagnetic layer but not the pinned magnetic layer is in contact with the second connecting hole.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×