Rectifying charge storage element

• US 6,982,452 B2
• Filed: 07/01/2003
• Issued: 01/03/2006
• Est. Priority Date: 11/28/2000
• Status: Expired due to Fees

• Current Assignee: Precision Dynamics Corporation (Brady Corporation)
• Original Assignee: Precision Dynamics Corporation (Brady Corporation)
• Inventors: Beigel, Michael L.
• Primary Examiner(s): QUACH, TUAN N
• Application Number:
  US10/895,434
• Publication Number:
  US 20050035430A1
• Time in Patent Office: 917 Days
• Field of Search: 257/303, 257/532, 257/586
• US Class Current: 257/303
• CPC Class Codes: G06K 19/0701 at least one of the integrated circuit chips comprising an arrangement for power management
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: H01L 23/4985 Flexible insulating substrates H01L23/49572 and H01L23/49855 take precedence
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 27/0788 comprising combinations of diodes or capacitors or resistors
• CPC Class Codes: H01L 29/00 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor H01L31/00 - H01L33/00, H10K10/00, H10N take precedence; details other than of semiconductor bodies or of electrodes thereof H01L23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L27/00
• CPC Class Codes: H01L 29/16 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

An electronic device or signal processing device consists of a rectifier and capacitor which share common elements facilitating the construction and application of the device to various types of substrates and, particularly, flexible substrates. Components of the device may be fabricated from organic conductors and semiconductors.

Claims

1. A rectifying charge storage element, comprising:

a first conductor;

a common conductor spaced from said first conductor;

a second conductor spaced from said common conductor;

a semiconductor located between said first and common conductors; and

a dielectric located between said common and second conductors;

said first conductor being formed from a material having a first work function, and said common and second conductors being formed from a material having a second work function.

2. The rectifying charge storage element of claim 1, wherein said semiconductor defines a diode component and wherein said common and second conductors cooperate with said dielectric to define a capacitor component.

3. The rectifying charge storage element of claim 2, wherein said first work function is greater than said second work function whereby said diode component is forward biased.

4. The rectifying charge storage element of claim 2, wherein said first work function is less than said second work function whereby said diode component is reverse biased.

5. The rectifying charge storage element of claim 2, further including a substrate carrying said diode and capacitor components.

6. The rectifying charge storage element of claim 5, wherein said substrate is a flexible substrate.

7. The rectifying charge storage element of claim 5, wherein said capacitor structure incorporates said substrate.

8. The rectifying charge storage element of claim 7, wherein said substrate is incorporated into said dielectric.

9. The rectifying charge storage element of claim 1, wherein said semiconductor and said dielectric comprise a common polymer semiconductor layer located between said common and second conductors, said first conductor being located on one side of said common polymer layer opposite to said common conductor and in spaced relation to said second conductor.

10. The rectifying charge storage element of claim 1, wherein said semiconductor includes an organic material.

11. The rectifying charge storage element of claim 1, wherein said dielectric includes an organic material.

12. A rectifying charge storage element, comprising:

an anode conductor;

a common conductor;

a semiconductor connected between said anode and common conductors;

a capacitor incorporating said common conductor on one side, said capacitor further including a second conductor and a dielectric connected between said common and second conductors;

said semiconductor, common conductor and capacitor comprising a unitary composite device;

said anode conductor being formed from a material having a first work function, and said common and second conductors being formed from a material having a second work function.

13. The rectifying charge storage element of claim 12, wherein said semiconductor defines a diode component.

14. The rectifying charge storage element of claim 13, wherein said first work function is greater than said second work function whereby said diode component is forward biased.

15. The rectifying charge storage element of claim 13, wherein said first work function is less than said second work function whereby said diode component is reverse biased.

16. The rectifying charge storage element of claim 13, further including a substrate carrying said diode and capacitor components.

17. The rectifying charge storage element of claim 16, wherein said substrate is a flexible substrate.

18. The rectifying charge storage element of claim 16, wherein said capacitor structure incorporates said substrate.

19. The rectifying charge storage element of claim 18, wherein said substrate is incorporated into said dielectric.

20. The rectifying charge storage element of claim 12, wherein said semiconductor and said dielectric comprise a common polymer semiconductor layer located between said common and second conductors, said anode conductor being located on one side of said common polymer layer opposite to said common conductor and in spaced relation to said second conductor.

21. The rectifying charge storage element of claim 12, wherein said semiconductor includes an organic material.

22. The rectifying charge storage element of claim 12, wherein said dielectric includes an organic material.