Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics
First Claim
1. A semiconductor device comprising an n-channel field effect transistor and a p-channel field effect transistor both formed on a substrate,wherein said transistors each comprise an insulated film wrapping a gate electrode and extending to a location adjacent to a source/drain area, and said insulated film is mainly composed of silicon nitride, and the thickness of said insulated film of said n-channel field effect transistor differs from the thickness of said insulated film of said p-channel field effect transistor.
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Accused Products
Abstract
The present invention provides a semiconductor device including n-channel field effect transistors and p-channel field effect transistors all of which have excellent drain current characteristics.
In a semiconductor device including an n-channel field effect transistor 10 and a p-channel field effect transistor 30, a stress control film 19 covering a gate electrode 15 of the n-channel field effect transistor 10 undergoes film stress mainly composed of tensile stress. A stress control film 39 covering a gate electrode 15 of the p-channel field effect transistor 30 undergoes film stress mainly caused by compression stress compared to the film 19 of the n-channel field effect transistor 10. Accordingly, drain current is expected to be improved in both the n-channel field effect transistor and the p-channel field effect transistor. Consequently, the characteristics can be generally improved.
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Citations
16 Claims
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1. A semiconductor device comprising an n-channel field effect transistor and a p-channel field effect transistor both formed on a substrate,
wherein said transistors each comprise an insulated film wrapping a gate electrode and extending to a location adjacent to a source/drain area, and said insulated film is mainly composed of silicon nitride, and the thickness of said insulated film of said n-channel field effect transistor differs from the thickness of said insulated film of said p-channel field effect transistor.
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5. A semiconductor device comprising:
- an n-channel field effect transistor; and
a p-channel field effect transistor both formed on a substrate,wherein a gate electrode of said n-channel field effect transistor is formed to undergo higher compression film stress than that of said p-channel field effect transistor.
- an n-channel field effect transistor; and
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6. A semiconductor device comprising:
- an n-channel field effect transistor; and
a p-channel field effect transistor both formed on a substrate,wherein impurities contained in a gate electrode of said n-channel field effect transistor have a concentration gradient in a perpendicular direction in a main plane of said silicon substrate, and impurities contained in a gate electrode of said p-channel field effect transistor have no concentration gradient in said perpendicular direction in said main plane of said silicon substrate within measurement limits or have a smaller concentration gradient than those in said gate electrode of said n-channel field effect transistor.
- an n-channel field effect transistor; and
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7. A semiconductor device comprising:
- an n-channel field effect transistor; and
a p-channel field effect transistor both formed on a substrate,wherein said gate electrode of said n-channel field effect transistor has a smaller average crystal particle size than that of said p-channel field effect transistor.
- an n-channel field effect transistor; and
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8. A semiconductor device comprising:
- an n-channel field effect transistor;
a p-channel field effect transistor; and
element separating means for electrically separating adjacent transistor elements from each other, said n- and p-channel field effect transistor and said element separating means all being formed on a substrate,wherein the distance between a channel portion of said n-channel field effect transistor and said element separating means is larger than that between a channel portion of said p-channel field effect transistor and said element separating means.
- an n-channel field effect transistor;
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9. A semiconductor device comprising:
- an n-channel field effect transistor; and
a p-channel field effect transistor both formed on a substrate,wherein a Raman shift in a Raman spectrum obtained when a channel portion of said n-channel field effect transistor is irradiated with laser beams is smaller than that obtained when a channel portion of said p-channel field effect transistor is irradiated with laser beams.
- an n-channel field effect transistor; and
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10. A semiconductor device comprising an n-channel field effect transistor and a p-channel field effect transistor both formed on a substrate,
wherein said transistors each have a silicide area formed in a source or drain area, and said silicide area of said n-channel field effect transistor is thicker than that of said p-channel field effect transistor.
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12. A semiconductor device comprising an n-channel field effect transistor and a p-channel field effect transistor both formed on a substrate,
wherein if tensile stress acts on an insulated film wrapping a gate electrode of each of said transistors and extending to an area adjacent to a source/drain area, then in a potion of said insulated film which is adjacent to the longitudinal side of the gate electrode, the p-channel field effect transistor has a smaller Young'"'"'s modulus than the n-channel field effect transistor, and if compression stress acts on said insulated film wrapping said gate electrode of each of said transistors and extending to said area adjacent to said source/drain area, then in a portion of said insulated film which is adjacent to the longitudinal side of the gate electrode, the p-channel field effect transistor has a larger Young'"'"'s modulus than the n-channel fiefd effect transistor.
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14. A semiconductor device comprising an n-channel field effect transistor and a p-channel field effect transistor both formed on a substrate,
wherein: -
said n-channel field effect transistor includes a plurality of n-channel field effect transistors and said p-channel field effect transistor includes a plurality of p-channel field effect transistors, an insulated film undergoing tensile stress is formed on said n-channel field effect transistors and said p-channel field effect transistors, and a portion of said insulated film which is thinner than a portion of said insulated film which is formed on a first p-channel field effect transistor or a second p-channel field effect transistor adjacent to said first p-channel field effect transistor is formed between said first p-channel field effect transistor and said second p-channel field effect transistor, or said insulated film is not installed on said first p-channel field effect transistor or said second p-channel field effect transistor.
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15. A semiconductor device comprising an n-channel field effect transistor and a p-channel field effect transistor bath formed on a substrate,
wherein: -
said n-channel field effect transistor includes a plurality of n-channel field effect transistors and said p-channel field effect transistor includes a plurality of p-channel field effect transistors, an insulated film undergoing tensile stress is formed on said n-channel field effect transistors and said p-channel field effect transistors, and a portion of said insulated film which is thinner than a portion of said insulated film which is formed in an area located between a first n-channel field effect transistor and a second n-channel field effect transistor is formed in an area located between a first p-channel field effect transistor and a second p-channel field effect transistor adjacent to said first p-channel field effect transistor, said first n-channel field effect transistor corresponding to said first p-channel field effect transistor, said second n-channel field effect transistor corresponding to said second p-channel field effect transistor, or said insulated film is not formed in said area located between said first p-channel field effect transistor and said second p-channel field effect transistor.
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16. A semiconductor device comprising an n-channel field effect transistor and a p-channel field effect transistor both formed on a substrate,
wherein: -
said n-channel field effect transistor includes a plurality of n-channel field effect transistors and said p-channel field effect transistor includes a plurality of p-channel field effect transistors, an insulated film undergoing compression stress is formed on said n-channel field effect transistors and said p-channel field effect transistors, and a portion of said insulated film which is thinner than a portion of said insulated film which is formed in an area located between a first p-channel field effect transistor and a second p-channel field effect transistor adjacent to said first p-channel field effect transistor is formed in an area located between a first n-channel field effect transistor corresponding to said first p-channel field effect transistor and a second n-channel field effect transistor corresponding to said second p-channel field effect transistor, or said insulated film is not formed in said area located between said first n-channel field effect transistor and said second n-channel field effect transistor.
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Specification