Data read circuit for use in a semiconductor memory and a memory thereof

• US 6,982,913 B2
• Filed: 09/17/2004
• Issued: 01/03/2006
• Est. Priority Date: 09/19/2003
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Cho, Woo-Yeong, Kwak, Choong-Keun, Oh, Hyung-Rok
• Primary Examiner(s): Yoha, Connie C.
• Application Number:
  US10/943,300
• Publication Number:
  US 20050030814A1
• Time in Patent Office: 473 Days
• Field of Search: 365/203, 365/205, 365/189.07, 365/189.06, 365/189.09
• US Class Current: 365/203
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/0026 Bit-line or column circuits
• CPC Class Codes: G11C 13/004 Reading or sensing circuits or methods
• CPC Class Codes: G11C 2013/0054 Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
• CPC Class Codes: G11C 2207/005 Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
• CPC Class Codes: G11C 7/06 Sense amplifiers; Associated circuits , e.g. timing or triggering circuits
• CPC Class Codes: G11C 7/12 Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Abstract

A data read circuit and method for use in a semiconductor memory device that has a memory cell array are provided. The circuit includes a selector for selecting a unit cell within the memory cell array in response to an address signal; a clamping unit for supplying a clamp voltage having a level for a read operation to a bit line of the selected unit cell in response to a clamp control signal; a precharge unit for precharging a sensing node to a voltage having a power source level in response to a control signal of a first state in a precharge mode, and compensating through the sensing node for a reduced quantity of current at the bit line in response to a control signal of a second state in a data sensing mode; and a sense amplifier unit for comparing a level of the sensing node with a reference level, and for sensing data stored in the selected unit cell.

Claims

1. A data read circuit for use in a semiconductor memory device having a memory cell array, the memory cell array having a plurality of unit cells, the data read circuit comprising:

a selector for selecting one of the plurality of unit cells in response to an address signal;

a clamping unit connected between a bit line coupled with the selected unit cell and a sensing node, the clamping unit for supplying a clamp voltage having a level for a read operation to the bit line of the selected unit cell in response to a clamp control signal;

a precharge unit for precharging the sensing node to a voltage having a power source level in response to a control signal of a first state applied during a precharge mode, and compensating through the sensing node for a reduced quantity of current at the bit line connected to the selected unit cell in response to a control signal of a second state applied during a data sensing mode; and

a sense amplifier unit for comparing a level of the sensing node with a reference level and for sensing data stored in the selected unit cell, when the control signal of the second state is applied to the precharge unit.

2. The circuit of claim 1, wherein the control signal of the second state has a level higher than the control signal of the first state if the precharge unit is a positive channel metal oxide semiconductor (PMOS) transistor.

3. The circuit of claim 2, wherein the control signal of the second state applied to the precharge unit has a voltage level approximate to a threshold voltage for turning on the PMOS transistor.

4. The circuit of claim 3, wherein the precharge unit comprises:

a transistor that operates in response to one of the control signal that has the first state during the precharge mode and the control signal that has the second state during the data sensing mode.

5. The circuit of claim 4, wherein the control signal of the precharge unit is a pulse type signal.

6. The circuit of claim 4, wherein the control signal applied to the compensating transistor is a direct current signal having a level for the read operation.

7. The circuit of claim 4, wherein the clamp control signal is one of a direct current signal having a level for the read operation and a pulse type signal.

8. The circuit of claim 4, wherein the sense amplifier unit is one of:

a voltage sense amplifier; and

a current sense amplifier.

9. The circuit of claim 3, wherein the precharge unit comprises:

a precharge transistor that responds to the control signal having the first state during the precharge mode and that is connected between the sensing node and a power source; and

a compensating transistor that responds to the control signal having the second state during the data sensing mode and that is connected to the sensing node.

10. The circuit of claim 9, wherein the control signal of the precharge unit is a pulse type signal.

11. The circuit of claim 9, wherein the control signal applied to the compensating transistor is a direct current signal having a level for the read operation.

12. The circuit of claim 9, wherein the clamp control signal is one of a direct current signal having a level for a read operation and a pulse type signal.

13. The circuit of claim 9, wherein the sense amplifier unit is one of:

a voltage sense amplifier; and

a current sense amplifier.

14. The circuit of claim 1, wherein each of the plurality of unit cells comprises an access transistor and a variable resistor.

15. A method of controlling a data sensing node in a semiconductor memory device, the semiconductor memory device having a memory cell array comprising a plurality of unit cells each of the plurality of unit cells having an access transistor and a variable resistor;

a sense amplifier for sensing data stored in the plurality of unit cells; and

a transistor connected between a sensing node of the sense amplifier and a power source, the method comprising;

operating the transistor connected between the sensing node of the sense amplifier and the power source under a turn-on state without entering a turn-off state when in a precharge mode and a data sensing mode; and

receiving the power source supplied from the transistor at the sensing node.

16. The method of claim 15, wherein the transistor precharges the sensing node of the sense amplifier to a power source level during the precharge mode, and supplies a bias current to the sensing node, the bias current compensating for a reduced quantity of current at a bit line connected to the unit cell during the data sensing mode.

17. The method of claim 15, wherein the control signal is a pulse type signal.

18. A method of reading data in a semiconductor memory device having a memory cell array having a plurality of unit cells, the method comprising:

precharging a sensing node to a power source level in response to a control signal of a first state;

selecting a unit cell from the memory cell array in response to an address signal;

clamping a level of a bit line of the selected unit cell at a clamp level in response to a clamp control signal applied simultaneously upon completion of the precharging, and supplying a bias current to the sensing node in response to a control signal of a second state applied simultaneously upon completion of the precharing, to compensate for a reduced quantity of current at the bit line connected to the selected unit cell; and

sensing and outputting data of the selected unit cell by comparing a level of the sensing node with a reference level.

19. The method of claim 18, wherein the control signal of the second state has a level higher than the control signal of the first state if the transistor responding to the control signal of the first and second states is a positive channel metal oxide semiconductor (PMOS) transistor.

20. The method of claim 19, wherein of the control signal of the second state has a voltage level approximate to a threshold voltage for turning on the PMOS transistor.