Memory card and data processing system

• US 6,982,919 B2
• Filed: 07/15/2004
• Issued: 01/03/2006
• Est. Priority Date: 08/07/2003
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Nakamura, Yasuhiro, Shikata, Atsushi, Kasai, Hideo, Kumahara, Chiaki, Odate, Hidefumi
• Primary Examiner(s): Nguyen, Van Thu
• Assistant Examiner(s): Nguyen, Dang T.
• Application Number:
  US10/891,297
• Publication Number:
  US 20050041509A1
• Time in Patent Office: 537 Days
• Field of Search: 365/226, 365/185.22, 365/185.23, 365/185.33, 365/189.07, 365/230.06
• US Class Current: 365/226
• CPC Class Codes: G11C 16/30 Power supply circuits

Abstract

A memory card and a microcomputer with nonvolatile memory wherein operation under two different types of power supply specifications is achieved are provided.

A MultiMediaCard includes a flash memory and a controller which controls the operation associated with the flash memory. When the controller judges the level of supply voltage supplied from host equipment, it operates as follows: the controller judges whether detecting point corresponding to the voltage level of 1.8V system has been exceeded. After the judgment of excess, the controller judges whether detecting point corresponding to the voltage level of 3.3V system has been exceeded. When the supply voltage is at the voltage level of 1.8V system, the controller causes the flash memory to operate in the 1.8V-system operation mode without driving regulators or level shifters. When the supply voltage is at the voltage level of 3.3V system, the controller drives the regulators and the level shifters to convert the voltage level and causes the flash memory to operate in the 3.3V-system operation mode.

Claims

1. A memory card comprising:

a nonvolatile memory;

a controller which controls operations associated with said nonvolatile memory; and

a converter which converts a level of a supply voltage to an internal voltage level depending upon an operation mode of said nonvolatile memory,

wherein said controller is capable of selecting one of a first operation mode in which said nonvolatile memory is supplied with a voltage in a first range and a second operation mode in which said nonvolatile memory is supplied with a voltage in a second range higher than said first range, and

wherein said controller performs the following operations;

said controller judges whether said level of said supply voltage is higher than a first detection voltage level corresponding to said first range;

after the judgment of said level of said supply voltage, said controller further judges whether said level of said supply voltage is higher than a second detection voltage level corresponding to said second range;

when said supply level is in said first range, said controller causes said nonvolatile memory to operate in said first operation mode without driving said converter; and

when said supply voltage is in said second range, said controller drives said converter to convert said level and of said supply voltage to said internal voltage level causes said nonvolatile memory to operate in said second operation mode.

2. The memory card according to claim 1,

wherein said controller has information indicating that said memory card thereof is operable at either or both of said first range and said second range.

3. The memory card according to claim 1,

wherein said controller carries out transition from said first operation mode to said second operation mode and disables transition from said second operation mode to said first operation mode.

4. The memory card according to claim 1,

wherein said controller carries out transition from said first operation mode to said second operation mode and enables transition from said second operation mode to said first operation mode when said controller receives a transition instruction from outside.

5. The memory card according to claim 1,

wherein said first range includes a level of 1.8V, and said second range includes a level of 3.3V.

6. A microcomputer with nonvolatile memory comprising:

a nonvolatile memory;

a microcomputer which controls operations associated with said nonvolatile memory; and

a converter which converts a level of a supply voltage to an internal voltage level depending upon an operation mode of said nonvolatile memory,

wherein said converter is capable of selecting one of a first operation mode in which said nonvolatile memory is supplied with at a voltage and in a first range and a second operation mode in which said nonvolatile memory is supplied with a voltage in a second range higher than said first range, and

wherein said microcomputer performs the following operations;

said microcomputer judges whether said level of said supply voltage has reached a first detection voltage has corresponding to said first range;

after the judgment of, said level of said supply voltage, said microcomputer further judges whether said level of said supply voltage has reached a second detection voltage corresponding to said second range;

when said level of said supply voltage is within said first range, said microcomputer causes said nonvolatile memory to operate in said first operation mode without driving said converter; and

when said supply level of voltage is within said second range, said microcomputer drives said converter to convert said level of said supply voltage to said internal voltage level and causes said nonvolatile memory to operate in said second operation mode.

7. The microcomputer with nonvolatile memory according to claim 6,

wherein said microcomputer has information indicating said microcomputer with nonvolatile memory is operable in either or both of said first range and said second range.

8. The microcomputer with nonvolatile memory according to claim 6,

wherein said microcomputer carries out transition from said first operation mode to said second operation mode and transition from said second operation mode to said first operation mode.

9. The microcomputer with nonvolatile memory according to claim 6,

wherein said first range includes a level of 1.8V and said second range includes a level of 3.3V.