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Method and device for the temperature control of surface temperatures of substrates in a CVD reactor

  • US 6,983,620 B2
  • Filed: 02/04/2005
  • Issued: 01/10/2006
  • Est. Priority Date: 11/11/2000
  • Status: Expired due to Term
First Claim
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1. A CVD reactor having a multiplicity of substrate holders carried on dynamic gas cushions on a substrate holder carrier, characterized by a measuring device, which has at least one temperature-measuring element, for determining the surface temperatures of all the substrates located on the substrate holders, a temperature-control element and gas mass flow control means which are individually associated with each substrate holder and are actuated by the temperature-control element in such a manner that the substrate temperatures are kept within a predetermined temperature window by variation of the gas cushion height.

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