Precursor source mixtures
First Claim
1. A precursor source mixture utilized for chemical vapor deposition or atomic layer deposition comprising at least one precursor compound which is dissolved, emulsified or suspended in an inert organic liquid, wheresaid precursor compound is a precursor metal atom bound to a ligand selected from the group consisting of hydride, carbonyl, imido, hydrazido, phosphido, nitrosyl, nitryl, nitrate, nitrite, halide, azide, siloxy, and silyl, with the proviso that the precursor compound is not an alkylamine alane, MeAu(PMe3), or (Me3P)Cu(tertbutoxy), tantalum cyclopentadienyl hydride, copper bound to a β
- -diketonate, β
-diiminate, β
-diketiminate, and the proviso that the precursor compound is not bound to a diketoamido (RC(O)NC(O)CR), imidoylamidinato (RC(NH)NC(NH)CR), ketimidoylamidinato RC(O)NC(NH)CR, or hydrocarbyl C(R2)C(CH3)2C(R2)N(R2) ligand, wherein R is a hydrocarbon and the proviso that the precursor metal atom is not Pt and with the proviso that when the precursor metal atom is Ru and said ligand is a carbonyl, then the precursor is selected from the group consisting of Ru3CO12 and Ru3(CO)12.
6 Assignments
0 Petitions
Accused Products
Abstract
A precursor source mixture useful for CVD or ALD of a film comprising: at least one precursor composed of an element selected from the group consisting of Li, Na, K, Rb, Cs, Fr, Be, Mg, Ti, Zr, Hf, Sc, Y, La, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, P, Sb and Bi, to which is bound at least one ligand selected from the group consisting of hydride, alkyl, alkenyl, cycloalkenyl, aryl, alkyne, carbonyl, amido, imido, hydrazido, phosphido, nitrosyl, nitryl, nitrate, nitrile, halide, azide, alkoxy, siloxy, silyl, and halogenated, sulfonated or silyated derivatives thereof, which is dissolved, emulsified or suspended in an inert liquid selected from the group consisting of aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, ethers, aldehydes, ketones, acids, phenols, esters, amines, alkylnitrile, halogenated hydrocarbons, silyated hydrocarbons, thioethers, amines, cyanates, isocyanates, thiocyanates, silicone oils, nitroalkyl, alkylnitrate, and mixtures thereof. The precursor source mixture may be a solution, emulsion or suspension and may consist of a mixture of solid, liquid and gas phases which are distributed throughout the mixture.
666 Citations
45 Claims
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1. A precursor source mixture utilized for chemical vapor deposition or atomic layer deposition comprising at least one precursor compound which is dissolved, emulsified or suspended in an inert organic liquid, where
said precursor compound is a precursor metal atom bound to a ligand selected from the group consisting of hydride, carbonyl, imido, hydrazido, phosphido, nitrosyl, nitryl, nitrate, nitrite, halide, azide, siloxy, and silyl, with the proviso that the precursor compound is not an alkylamine alane, MeAu(PMe3), or (Me3P)Cu(tertbutoxy), tantalum cyclopentadienyl hydride, copper bound to a β - -diketonate, β
-diiminate, β
-diketiminate, and the proviso that the precursor compound is not bound to a diketoamido (RC(O)NC(O)CR), imidoylamidinato (RC(NH)NC(NH)CR), ketimidoylamidinato RC(O)NC(NH)CR, or hydrocarbyl C(R2)C(CH3)2C(R2)N(R2) ligand, wherein R is a hydrocarbon and the proviso that the precursor metal atom is not Pt and with the proviso that when the precursor metal atom is Ru and said ligand is a carbonyl, then the precursor is selected from the group consisting of Ru3CO12 and Ru3(CO)12. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
- -diketonate, β
Specification