Layer member forming method

• US 6,984,595 B1
• Filed: 09/04/1997
• Issued: 01/10/2006
• Est. Priority Date: 11/26/1984
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): PERT, EVAN T
• Application Number:
  US08/926,592
• Time in Patent Office: 3,050 Days
• Field of Search: 438/624, 438/763, 438/788, 438/792, 438/913, 438/439, 438/761, 438/791, 427/579, 427/5, 427/578, 427/457, 427/569
• US Class Current: 438/792
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/482 using incoherent light, UV to IR, e.g. lamps
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

A vapor reaction method including the steps of providing a pair of first and second electrodes within a reaction chamber where the pair of electrodes are arranged substantially parallel with each other. The method further includes the steps of placing a substrate in the reaction chamber where the substrate is held by said first electrode so that a first surface of the substrate faces toward the second electrode. A first film forming gas is introduced into the reaction chamber through the second electrode. The first film forming gas is excited to form a first insulating film by vapor deposition. The first insulating film may be silicon nitride. The method may also include the step of introducing a second film forming gas into the reaction chamber through the second electrode to ultimately form a second film. After removing the substrate from the reaction chamber, a cleaning gas may then be introduced through the second electrode to remove unnecessary layers from the inside of the reaction chamber.

Claims

1. A vapor reaction method comprising the steps of:

providing a pair of first and second electrodes within a reaction chamber, said pair of electrodes being arranged substantially in parallel with each other;

placing a substrate in the reaction chamber wherein said substrate is held by said first electrode so that a first surface of said substrate faces toward said second electrode;

introducing a first film forming gas into said reaction chamber through said second electrode;

exciting said first film forming gas in order to form a first insulating film by first vapor deposition on said substrate placed in said reaction chamber wherein said first insulating film comprises silicon nitride;

introducing a second film forming gas into said reaction chamber through said second electrode;

exciting said second film forming gas in order to form a second insulating film by a second vapor deposition directly on said first insulating film in said reaction chamber wherein said first and second insulating films contact each other;

removing said substrate from said reaction chamber after the formation of the first and second insulating films;

introducing a cleaning gas comprising nitrogen fluoride into said reaction chamber through said second electrode;

exciting said cleaning gas in order to remove unnecessary layers caused the first and second vapor depositions from an inside of the reaction chamber,

wherein the second insulating film comprises a different material from the first insulating film.

2. The vapor reaction method according to claim 1 wherein said first vapor deposition is a photo CVD.

3. The vapor reaction method according to claim 1 wherein said second vapor deposition is a plasma CVD.

4. The vapor reaction method according to claim 1 wherein said second electrode is provided with a plurality of ports for introducing said cleaning gas into the reaction chamber.

5. A vapor reaction method comprising the steps of:

providing a pair of first and second electrodes within a reaction chamber, said pair of electrodes being arranged substantially in parallel with each other;

placing a substrate in a reaction chamber on said first electrode so that a first surface of said substrate faces toward said second electrode;

introducing a first film forming gas into said reaction chamber through said second electrode;

exciting said first film forming gas in order to form a first film comprising silicon nitride by vapor deposition on said substrate placed in said reaction chamber;

introducing a second film forming gas into said reaction chamber through said second electrode;

exciting said second film forming gas in order to form a second film by vapor deposition directly on said first film in said reaction chamber;

removing said substrate from said reaction chamber after the formation of the first and second films;

introducing a cleaning gas comprising nitrogen fluoride into said reaction chamber through said second electrode;

exciting said cleaning gas in order to remove unnecessary layers formed on an inside of the reaction chamber due to the formation of the first and second films.

6. The vapor reaction method according to claim 5 wherein said first vapor deposition is a photo CVD.

7. A method according to claim 5 wherein said second vapor deposition is a plasma CVD.

8. A method according to claim 5 wherein said second electrode is provided with a plurality of ports for introducing said cleaning gas into the reaction chamber.

9. A method of fabricating electronic devices comprising the steps of:

providing a pair of electrodes within a reaction chamber wherein said pair of electrodes are opposed in parallel with each other;

placing a substrate in a reaction chamber wherein said substrate is placed on said pair of electrodes so that a first surface of said substrate faces toward said second electrode;

introducing a first film forming gas into said reaction chamber through the other one of said electrodes;

exciting said first film forming gas to form a first film comprising silicon nitride by first chemical vapor deposition on said substrate;

introducing a second film forming gas into said reaction chamber through the other one of said electrodes;

exciting said second film forming gas to form a second film by second chemical vapor deposition directly on said first film, said second film comprising a different material from said first film;

removing said substrate from said reaction chamber after the formation of said first and second films;

introducing a cleaning gas comprising nitrogen fluoride into said reaction chamber through said other one of the electrodes; and

conducting a cleaning of an inside of said reaction chamber by using said cleaning gas to remove layers caused by at least said first and second vapor phase deposition.

10. The method according to claim 9 wherein said first chemical vapor deposition is a photo CVD.

11. The method according to claim 9 wherein said second chemical vapor deposition is a plasma CVD.

12. The method according to claim 9 wherein said cleaning gas is excited by said pair of electrodes.

13. The method according to claim 9 wherein said other one of the electrodes is provided with a plurality of ports for introducing said cleaning gas into the reaction chamber.

14. A method of fabricating electronic devices comprising the steps of:

providing a pair of electrodes within a reaction chamber wherein said pair of electrodes are opposed in parallel with each other;

placing a substrate in a reaction chamber wherein said substrate is held by one of said electrodes so that a first surface of said substrate faces toward said second electrode;

introducing a first film forming gas into said reaction chamber through the other one of said electrodes;

exciting said first film forming gas to form a first film comprising silicon nitride by first chemical vapor deposition on said substrate;

introducing a second film forming gas into said reaction chamber through the other one of said electrodes;

exciting said second film forming gas to form a second film by second chemical vapor deposition directly on said first film wherein said second film comprises a different material from said first film;

removing said substrate from said reaction chamber after the formation of said first and second films;

introducing a cleaning gas comprising nitrogen fluoride into said reaction chamber through said other one of the electrodes; and

conducting a cleaning of an inside of said reaction chamber by using said cleaning gas to remove layers caused by at least said first and second vapor phase deposition, wherein one of the first and second films comprises silicon nitride.

15. The method according to claim 14 wherein said first chemical vapor deposition is a photo CVD.

16. The method according to claim 14 wherein said second chemical vapor deposition is a plasma CVD.

17. The method according to claim 14 wherein said cleaning gas is excited by said pair of electrodes.

18. The method according to claim 14 wherein said other one of the electrodes is provided with a plurality of ports for introducing said cleaning gas into the reaction chamber.