Silicon nanoparticle field effect transistor and transistor memory device
First Claim
1. A single electron transistor device comprising:
- a source;
a drain;
a gate;
a buried gate layer of silicon nanoparticles; and
wherein said silicon nanoparticles have a diameter of approximately 1 nm.
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Accused Products
Abstract
A silicon nanoparticle transistor and transistor memory device. The transistor of the invention has silicon nanoparticles, dimensioned on the order of 1 nm, in a gate area of a field effect transistor. The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles to create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. The device is a flash memory device which will store electrical charge instead of magnetic effects.
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Citations
11 Claims
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1. A single electron transistor device comprising:
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a source; a drain; a gate; a buried gate layer of silicon nanoparticles; and wherein said silicon nanoparticles have a diameter of approximately 1 nm. - View Dependent Claims (2, 3)
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4. A method for operating a single electron device, which has a source, a drain, a gate, and 1 nm diameter silicon nanoparticles implanted as a buried gate layer, comprising the steps of:
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creating at least one hole in the silicon nanoparticles to enable the silicon nanoparticles to conduct a single electron at room temperature across the source and the drain; and applying a voltage across the drain and the source. - View Dependent Claims (5, 6)
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7. A transistor memory device comprising:
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a source; a drain; and a gate, with 1 nm diameter silicon nanoparticles contained in a control oxide and separate from a tunnel oxide disposed between said source and drain.
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8. A single electron device comprising:
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a source; a drain; a gate; a buried gate layer of silicon nanoparticles; and a buried gate contact to electrically stimulate said silicon nanoparticles separately from a contact to said gate; wherein said silicon nanoparticles have a diameter of approximately 1 nm.
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9. A single electron device comprising:
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a source; a drain; a layer of silicon nanoparticles having a diameter of approximately 1 nm for conducting a single electron at room temperature across the source and the drain; a stimulating device to create vacancies in said layer of the silicon nanoparticles for single electron operation. - View Dependent Claims (10, 11)
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Specification