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Silicon nanoparticle field effect transistor and transistor memory device

  • US 6,984,842 B1
  • Filed: 02/02/2000
  • Issued: 01/10/2006
  • Est. Priority Date: 10/25/1999
  • Status: Expired due to Fees
First Claim
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1. A single electron transistor device comprising:

  • a source;

    a drain;

    a gate;

    a buried gate layer of silicon nanoparticles; and

    wherein said silicon nanoparticles have a diameter of approximately 1 nm.

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