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Semiconductor light-emitting diode

  • US 6,984,850 B2
  • Filed: 11/07/2003
  • Issued: 01/10/2006
  • Est. Priority Date: 08/21/1998
  • Status: Expired due to Fees
First Claim
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1. A light-emitting diode, comprising:

  • a semiconductor substrate; and

    a layered structure comprising an AlGaInP type compound semiconductor material provided on the semiconductor substrate, the layered structure comprising;

    a light-emitting structure comprising of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and

    a current diffusion layer comprising an AlGaInP type compound semiconductor material, the current diffusion layer being lattice-mismatched with the light-emitting structure, andwherein crystal of the semiconductor substrate is inclined by 8°

    (degrees) to 20°

    (20 degrees) in a [011] direction with respect to a (100) plane thereof.

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