Methods for making copper and other metal interconnections in integrated circuits

• US 6,984,891 B2
• Filed: 03/26/2001
• Issued: 01/10/2006
• Est. Priority Date: 02/27/1998
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Ahn, Kie Y., Forbes, Leonard
• Primary Examiner(s): Thompson, Craig A.
• Assistant Examiner(s): Mitchell, James M.
• Application Number:
  US09/817,447
• Publication Number:
  US 20010017424A1
• Time in Patent Office: 1,751 Days
• Field of Search: 257/751, 257/758, 257/761, 257/770, 257/767, 257/763, 257/760, 438/618, 438/622
• US Class Current: 257/751
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with aluminum wires. Yet, aluminum wires have greater electrical resistance and are less reliable than copper wires. Unfortunately, current techniques for making copper wires are time-consuming and inefficient. Accordingly, the invention provides a method of making wires or interconnects from copper or other metals. One embodiment entails forming a first diffusion barrier inside a trench using ionized-magnetron sputtering for better conformal coating of the trench, and a second diffusion barrier outside the trench using jet-vapor deposition. The jet-vapor deposition has an acute angle of incidence which prevents deposition within the trench and thus eliminates conventional etching steps that would otherwise be required to leave the trench free of this material. After formation of the two diffusion barriers, the trench is filled with metal and annealed.

Claims

1. An integrated-circuit assembly comprising:

an insulative layer having a trench or hole, the trench or hole having an edge;

a first diffusion barrier having a portion inside the trench or hole; and

a second diffusion barrier on the insulative layer and having an edge substantially flush with a least a portion of the edge of the trench or hole, with the second diffusion barrier comprising a zinc oxide material and the first diffusion barrier comprising a material different than the zinc oxide material.

2. The integrated-circuit assembly of claim 1:

wherein the assembly further comprises a metal within the trench or hole; and

wherein the first diffusion barrier has a first wettability with the metal and the second diffusion barrier has a second wettability with the metal, the first wettability greater than the second wettability.

3. The integrated-circuit assembly of claim 1, further comprising a copper structure within the trench or hole.

4. The integrated-circuit assembly of claim 1, wherein the first diffusion barrier consists essentially of tungsten, titanium-tungsten, or titanium nitride.

5. The integrated-circuit assembly of claim 1, wherein the second diffusion barrier has no substantial portion within the trench or hole.

6. The integrated-circuit assembly of claim 1, wherein the trench or hole has an outer perimeter and wherein the second diffusion barrier includes a portion extending over the outer perimeter of the trench or hole.

7. The integrated-circuit assembly of claim 1, wherein the portion of the first diffusion barrier conforms to walls and a floor of the trench or hole.

8. The integrated-circuit assembly of claim 1, wherein the insulative layer consists essentially of a silicon oxide.

9. An integrated-circuit assembly comprising:

an insulative layer having opposing first and second major surface, with the first major surface having a trench or hole, the trench or hole having an edge;

a first diffusion barrier having an in-portion lining the trench or hole and having an out-portion outside the trench or hole and on the first major surface, with the out-portion having an edge adjacent the edge of the trench or hole;

a second diffusion barrier on the out-portion of the first diffusion barrier and having an edge substantially flush with a least a portion of the edge of the first diffusion barrier, with the second diffusion barrier comprising a zinc oxide material wherein the fist and second barriers are of different materials;

a copper conductor within the trench or hole and on the first diffusion barrier, with the second diffusion barrier having lesser wettability with copper than the first diffusion barrier.

10. The integrated-circuit assembly of claim 9, wherein the second diffusion barrier has no substantial portion within the trench or hole.

11. The integrated-circuit assembly of claim 9, wherein the insulative layer consists essentially of a silicon oxide.

12. The integrated-circuit assembly of claim 9, wherein the first diffusion barrier consists essentially of tungsten.

13. The integrated-circuit assembly of claim 9, wherein the first diffusion barrier consists essentially of titanium-tungsten.

14. The integrated-circuit assembly of claim 9, wherein the first diffusion barrier consists essentially of titanium nitride.

15. An integrated-circuit assembly comprising:

an insulative layer having opposing first and second major surface, with the first major surface having a trench or hole, the trench or hole having an edge;

a first diffusion barrier having an in-portion lining the trench or hole and having an out-portion outside the trench or hole and on the first major surface, with the out-portion having an edge adjacent the edge of the trench or hole, the first diffusion barrier consisting essentially of tungsten, titanium-tungsten, or titanium nitride;

a second diffusion barrier consisting of zinc oxide on the out-portion of the first diffusion barrier and having an edge substantially flush with a least a portion of the edge of the first diffusion barrier;

a copper conductor within the trench or hole and on the first diffusion barrier, with the second diffusion barrier having lesser wettability with copper than the first diffusion barrier.

16. The integrated-circuit assembly of claim 15, wherein the second diffusion barrier consists essentially of zinc oxide.

17. The integrated-circuit assembly of claim 15, wherein the second diffusion barrier has no substantial portion within the trench or hole.

18. The integrated-circuit assembly of claim 15, wherein the insulative layer consists essentially of a silicon oxide.

19. An integrated-circuit assembly comprising:

an insulative layer having opposing first and second major surfaces and a trench or hole in the first major surface;

a first diffusion-barrier layer having an in-portion within the trench or hole and an out-portion outside the trench or hole and on the first major surface; and

a second diffusion-barrier layer consisting of zinc oxide on the out-portion of the first diffusion-barrier layer, the second diffusion-barrier layer having no substantial portion within the trench or hole wherein the fist and second barriers are of different materials.

20. The integrated-circuit assembly of claim 19, wherein the trench or hole has an outer perimeter at the first major surface and wherein the second diffusion-barrier layer includes a portion extending over the outer perimeter of the trench or hole.

21. The integrated-circuit assembly of claim 19, wherein the first diffusion-barrier layer has a first wettability with a metal and the second diffusion-barrier layer has a second wettability with the metal, the first wettability greater than the second wettability.

22. The integrated-circuit assembly of claim 19, wherein the first diffusion-barrier layer consists essentially of a material having a first wettability with a metal, and the second diffusion-barrier layer consists essentially of a material having a second wettability with the metal, with the first wettability greater than the second wettability.

23. The integrated-circuit assembly of claim 19, wherein the first diffusion-barrier layer consists essentially of a zinc oxide material and the second diffusion barrier consists essentially of tungsten, titanium-tungsten, or titanium nitride.

24. The integrated-circuit assembly of claim 19, wherein the first diffusion-barrier layer consists essentially of a zinc oxide material.

25. The integrated-circuit assembly of claim 19, wherein the second diffusion barrier consists essentially of tungsten, titanium-tungsten, or titanium nitride.

26. The integrated-circuit assembly of claim 19, further comprising a copper structure within the trench or hole.

27. The integrated-circuit assembly of claim 19, wherein the insulative layer consists essentially of a silicon oxide.

28. The integrated-circuit assembly of claim 19, wherein the in-portion of the first diffusion-barrier layer conforms to walls and a floor of the trench or hole.

29. An integrated-circuit assembly comprising:

a silicon oxide insulative layer having opposing first and second major surfaces and a trench or hole in the first major surface;

a first diffusion-barrier layer having an in-portion within the trench or hole and an out-portion outside the trench or hole and on the first major surface;

a second diffusion-barrier layer consisting of zinc oxide on the out-portion of the first diffusion-barrier layer, the second diffusion-barrier layer having no substantial portion within the trench or hole; and

a copper conductor at least partially within the trench or hole and on the first diffusion-barrier layer wherein the fist and second barriers are of different materials.

30. The integrated-circuit assembly of claim 29, wherein the in-portion of the first diffusion-barrier layer conforms to walls and a floor of the trench or hole.

31. An integrated-circuit assembly comprising:

an insulative layer having opposing first and second major surfaces and a trench or hole in the first major surface;

a first diffusion-barrier layer having an in-portion within the trench or hole and an out-portion outside the trench or hole and on the first major surface, the in-portion of the first diffusion-barrier layer conforming to walls and a floor of the trench or hole;

a second diffusion-barrier layer consisting of zinc oxide on the out-portion of the first diffusion-barrier layer, the second diffusion-barrier layer having no substantial portion within the trench or hole; and

a copper conductor at least partially within the trench or hole and on the first diffusion-barrier layer wherein the fist and second barriers are of different materials.

32. The integrated-circuit assembly of claim 31, wherein the insulative layer consists essentially of silicon oxide.

33. An integrated-circuit assembly comprising:

an insulative layer having opposing first and second major surfaces and a trench or hole in the first major surface, with the trench or hole having an outer perimeter;

a first diffusion-barrier layer having an in-portion within the trench or hole and an out-portion outside the trench or hole and on the first major surface, the in-portion of the first diffusion-barrier layer conforming to walls and a floor of the trench or hole;

a second diffusion-barrier layer consisting of zinc oxide on the out-portion of the first diffusion-barrier layer, the second diffusion-barrier layer having no substantial portion within the trench or hole and having a portion extending over the outer perimeter of the trench or hole; and

a copper conductor at least partially within the trench or hole and on the first diffusion-barrier layer wherein the fist and second barriers are of different materials.

34. The integrated-circuit assembly of claim 33, wherein the insulative layer consists essentially of silicon oxide.

35. An integrated-circuit assembly comprising:

an insulative layer having opposing first and second major surfaces and a trench or hole in the first major surface, with the trench or hole having an outer perimeter;

a first diffusion-barrier layer having an in-portion within the trench or hole and an out-portion outside the trench or hole and on the first major surface and consisting essentially of a material having a first wettability with a metal, with the in-portion of the first diffusion-barrier layer conforming to walls and a floor of the trench or hole;

a second diffusion-barrier layer contacting the out-portion of the first diffusion-barrier layer, consisting essentially of a material having a second wettability with the metal, having no substantial portion within the trench or hole, and having a portion extending over the outer perimeter of the trench or hole, with the second wettability less than the first wettability; and

a conductor consisting essentially of copper, and being at least partially within the trench or hole and on the first diffusion-barrier layer wherein the fist diffusion barrier layer consist essentially of a zinc oxide material and the second diffusion barrier consist essentially of tungsten, titanium-tungsten, or titanium nitride.

36. The integrated-circuit assembly of claim 35, wherein the insulative layer consists essentially of silicon oxide.

37. The integrated-circuit assembly of claim 35, wherein the first diffusion-barrier layer consists essentially of a zinc oxide material.