Boost bridge amplifier

• US 6,985,034 B1
• Filed: 06/07/2000
• Issued: 01/10/2006
• Est. Priority Date: 06/29/1999
• Status: Expired due to Fees

• Current Assignee: Milan Prokin, Milenko Cvetinovic
• Original Assignee: Milan Prokin, Milenko Cvetinovic
• Inventors: Cvetinovic, Milenko, Prokin, Milan
• Primary Examiner(s): Nguyen, Khanh V.
• Application Number:
  US10/019,888
• Time in Patent Office: 2,043 Days
• Field of Search: 330/10, 330/146, 330/207.A, 330/251, 381/120
• US Class Current: 330/251
• CPC Class Codes: H02M 1/44 Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
• CPC Class Codes: H02M 3/1555 for the generation of a regulated current to a load whose impedance is substantially inductive
• CPC Class Codes: H02M 7/538 in a push-pull configuration H02M7/5375 takes precedence ; with oscillating arrangements H02M7/53832, H02M7/53846
• CPC Class Codes: H03F 2200/384 Amplifier without output filter, i.e. directly connected to the load
• CPC Class Codes: H03F 3/2173 of the bridge type

Abstract

The main difference between the boost bridge amplifier according to this invention and state of the art class D amplifiers is in the connection of a load between a power supply and a switching bridge which is supplied from a bridge capacitor. The switching bridge operation is controlled by the pulse-width modulated control signals. Thereby, it is possible to completely eliminate both input and output filters, which are required in state of the art class D amplifiers. It is also possible to achieve several times higher power at the load, due to the additional switching bridge supply from the bridge capacitor. Conducted and radiated EMI noise is significantly reduced in comparison with state of the art class D amplifiers. This embodiment provides a low price, small size and low EMI noise level.

Claims

1. A boost bridge amplifier comprising:

a power supply (1), having a first and a second nodes,

a poly-phase load (5), having a first and a end nodes per each phase,

a switching bridge (3), having a first and a second nodes, common for all phases, and an output node per each phase,

a bridge capacitor (6), having a first and a second nodes,

characterized in that,

the first node of said power supply (1) is connected to the first node of each phase of said load (5),

the second node of said power supply (1) is connected to the second node of said switching bridge (3) and the second node of said bridge capacitor (6),

the first node of said bridge capacitor (6) is connected to the first node of said switching bridge (3),

the second node of each phase of said load (5) is connected to the output node of the appropriate phase of said switching bridge (3),

the load (5) comprises resistance and smoothing inductance connected in series and

the power supply (1) is DC power supply.

2. The boost bridge amplifier of claim 1, wherein

the second node of a first phase (51) of said load (5) is connected to the third node of said switching bridge (3),

the first active switch (31) of said switching bridge (3) is connected between the first and third nodes of said switching bridge (3),

the first diode (71) anode is connected to the third node of said switching bridge (3), and the first diode (71) cathode is connected to the first node of said switching bridge (3),

the second active switch (32) of said switching bridge (3) is connected between the third and second nodes of said switching bridge (3), and

the second diode (72) anode is connected to the second node of said switching bridge (3), and the second diode (72) cathode is connected to the third node of said switching bridge (3).

3. The boost bridge amplifier of claim 2, wherein

the second node of said power supply (1) is connected to the first node of the first phase (51) of said load (5),

the first node of said power supply (1) is connected to the first node of said switching bridge (3) and the first node of said bridge capacitor (6), and

the second node of said bridge capacitor (6) is connected to the second node of said switching bridge (3).

4. The boost bridge amplifier of claim 3, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

5. The boost bridge amplifier of claim 2, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

6. The boost bridge amplifier of claim 1, wherein

the first node of said power supply (1) is connected to the first node of the first phase (51) of said load (5) and the first node of the second phase (52) of said load (5),

the second node of said power supply (1) is connected to the second node of said switching bridge (3) and the second node of said bridge capacitor (6),

the first node of said bridge capacitor (6) is connected to the first node of said switching bridge (3),

the second node of the first phase (51) of said load (5) is connected to the third node of said switching bridge (3),

the second node of the second phase (52) of said load (5) is connected to the fourth node of said switching bridge (3),

the first active switch (31) of said switching bridge (3) is connected between the first and third nodes of said switching bridge (3),

the first diode (71) anode is connected to the third node of said switching bridge (3), and the first diode (71) cathode is connected to the first node of said switching bridge (3),

the second active switch (32) of said switching bridge (3) is connected between the third and second nodes of said switching bridge (3),

the second diode (72) anode is connected to the second node of said switching bridge (3), and the second diode (72) cathode is connected to the third node of said switching bridge (3),

the third active switch (33) of said switching bridge (3) is connected between the first and fourth nodes of said switching bridge (3),

the third diode (73) anode is connected to the fourth node of said switching bridge (3), and the third diode (73) cathode is connected to the first node of said switching bridge (3),

the fourth active switch (34) of said switching bridge (3) is connected between the fourth and second nodes of said switching bridge (3), and

the fourth diode (74) anode is connected to the second node of said switching bridge (3), and the fourth diode (74) cathode is connected to the fourth node of said switching bridge (3).

7. The boost bridge amplifier of claim 6, wherein load (5) is a dual voice coil loudspeaker.

8. The boost bridge amplifier of claim 6, wherein

the second node of said power supply (1) is connected to the first node of the first phase (51) of said load (5) and the first node of the second phase (52) of said load (5),

the first node of said power supply (1) is connected to the first node of said switching bridge (3) and the first node of said bridge capacitor (6), and

the second node of said bridge capacitor (6) is connected to the second node of said switching bridge (3).

9. The boost bridge amplifier of claim 8, wherein

the third node of said switching bridge (3) is connected to the first node of the filtering capacitor (91),

the second node of said filtering capacitor (91) is connected to the first node of an additional load (92), and

the second node of said additional load (92) is connected to the fourth node of said switching bridge (3).

10. The boost bridge amplifier of claim 8, wherein load (5) is a dual voice coil loudspeaker.

11. The boost bridge amplifier of claim 8, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

12. The boost bridge amplifier of claim 6, wherein

the third node of said switching bridge (3) is connected to the first node of the filtering capacitor (91),

the second node of said filtering capacitor (91) is connected to the first node of an additional load (92), and

the second node of said additional load (92) is connected to the fourth node of said switching bridge (3).

13. The boost bridge amplifier of claim 6, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

14. The boost bridge amplifier of claim 1, wherein

the first node of said power supply (1) is connected to the first node of the first phase (51) of said load (5), the first node of the second phase (52) of said load (5), and the first node of the third phase (53) of said load (5),

the second node of said power supply (1) is connected to the second node of said switching bridge (3) and the second node of said bridge capacitor (6),

the first node of said bridge capacitor (6) is connected to the first node of said switching bridge (3),

the second node of the first phase (51) of said load (5) is connected to the third node of said switching bridge (3),

the second node of the second phase (52) of said load (5) is connected to the fourth node of said switching bridge (3),

the second node of the third phase (53) of said load (5) is connected to the fifth node of said switching bridge (3),

the first active switch (31) of said switching bridge (3) is connected between the first and third nodes of said switching bridge (3),

the first diode (71) anode is connected to the third node of said switching bridge (3), and the first diode (71) cathode is connected to the first node of said switching bridge (3),

the second active switch (32) of said switching bridge (3) is connected between the third and second nodes of said switching bridge (3),

the second diode (72) anode is connected to the second node of said switching bridge (3), and the second diode (72) cathode is connected to the third node of said switching bridge (3),

the third active switch (33) of said switching bridge (3) is connected between the first and fourth nodes of said switching bridge (3),

the third diode (73) anode is connected to the fourth node of said switching bridge (3), and the third diode (73) cathode is connected to the first node of said switching bridge (3),

the fourth active switch (34) of said switching bridge (3) is connected between the fourth and second nodes of said switching bridge (3),

the fourth diode (74) anode is connected to the second node of said switching bridge (3), and the fourth diode (74) cathode is connected to the fourth node of said switching bridge (3),

the fifth active switch (35) of said switching bridge (3) is connected between the first and fifth nodes of said switching bridge (3),

the fifth diode (75) anode is connected to the fifth node of said switching bridge (3), and the fifth diode (75) cathode is connected to the first node of said switching bridge (3),

the sixth active switch (36) of said switching bridge (3) is connected between the fifth and second nodes of said switching bridge (3), and

the sixth diode (76) anode is connected to the second node of said switching bridge (3), and the sixth diode (76) cathode is connected to the fifth node of said switching bridge (3).

15. The boost bridge amplifier of claim 14, wherein

the second node of said power supply (1) is connected to the first node of the first phase (51) of said load (5), the first node of the second phase (52) of said load (5), and the first node of the third phase (53) of said load (5),

the first node of said power supply (1) is connected to the first node of said switching bridge (3) and the first node of said bridge capacitor (6), and

the second node of said bridge capacitor (6) is connected to the second node of said switching bridge (3).

16. The boost bridge amplifier of claim 15, wherein load (5) is a three-phase electric motor.

17. The boost bridge amplifier of claim 15, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

18. The boost bridge amplifier of claim 14, wherein load (5) is a three-phase electric motor.

19. The boast bridge amplifier of claim 14, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

20. The boost bridge amplifier of claim 1, wherein load (5) is a dual voice coil loudspeaker.

21. The boost bridge amplifier of claim 1, wherein load (5) is a three-phase electric motor.

22. A boost bridge amplifier comprising:

a power supply (1), having a first and a second nodes,

a poly-phase load (5), having a first and a send nodes per each phase,

an output filter (4), having a first and a second nodes per each phase,

a switching bridge (3), having a first and a second nodes, common for all phases, and an output node per each phase,

a bridge capacitor (6), having a first and a second nodes,

characterized in that,

the first node of said power supply (1) is connected to the first node of each phase of said load (5),

the second node of said power supply (1) is connected to the second node of said switching bridge (3) and the second node of said bridge capacitor (6),

the first node of said bridge capacitor (6) is connected to the first node of said switching bridge (3),

the second node of each phase of said load (5) is connected to the first node of the appropriate phase of said output filter (4),

the second node of each phase of said output filter (4) is connected to the output node of the appropriate phase of said switching bridge (3), and

the power supply (1) is DC power supply.

23. The boost bridge amplifier of claim 22, wherein

the second node of a first phase (51) of said load (5) is connected to the first node of first filtering inductor (41),

the second node of first filtering inductor (41) is connected to the third node of said switching bridge (3),

the first active switch (31) of said switching bridge (3) is connected between the first and third nodes of said switching bridge (3),

the first diode (71) anode is connected to the third node of said switching bridge (3), and the first diode (71) cathode is connected to the first node of said switching bridge (3),

the second active switch (32) of said switching bridge (3) is connected between the third and second nodes of said switching bridge (3), and

the second diode (72) anode is connected to the second node of said switching bridge (3), and the second diode (72) cathode is connect to the third node of said switching bridge (3).

24. The boost bridge amplifier of claim 23, wherein

the first node of the first filtering inductor (41) is connected to the first node of a first filtering capacitor (81), and

the second node of said bridge capacitor (6) is connected to the second node of the first filtering capacitor (81).

25. The boost bridge amplifier of claim 24, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

26. The boost bridge amplifier of claim 23, wherein

the second node of said power supply (1) is connected to the first node of the first phase (51) of said load (5),

the first node of said power supply (1) is connected to the first node of said switching bridge (3) and the first node of said bridge capacitor (6), and

the second node of said bridge capacitor (6) is connected to the second node of said switching bridge (3).

27. The boost bridge amplifier of claim 26, wherein

the first node of the first filtering indictor (41) is connected to the first node of the first filtering capacitor (81), and

the first node of said bridge capacitor (6) is connected to the second node of the first filtering capacitor (81).

28. The boost bridge amplifier of claim 27, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

29. The boost bridge amplifier of claim 26, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

30. The boost bridge amplifier of claim 23, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

31. The boost bridge amplifier of claim 22, wherein

the first node of said power supply (1) is connected to the first node of first phase (51) of said load (5) and the first node of the second phase (52) of said load (5),

the second node of said power supply (i) is connected to the second node of said switching bridge (3) and the second node of said bridge capacitor (6),

the first node of said bridge capacitor (6) is connected to the first node of said switching bridge (3),

the second node of first phase (51) of said load (5) is connected to the first node of the first filtering inductor (41),

the second node of the first filtering inductor (41) is connected to the third node of said switching bridge (3),

the second node of the second phase (52) of said load (5) is connected to the first node of the second filtering inductor (42),

the second node of the second filtering inductor (42) is connected to the fourth node of said switching bridge (3),

the first active switch (31) of said switching bridge (3) is connected between the first and third nodes of said switching bridge (3),

the first diode (71) anode is connected to the third node of said switching bridge (3), and the fit diode (71) cathode is connected to the first node of said switching bridge (3),

the second active switch (32) of said switching bridge (3) is connected between the third and second nodes of said switching bridge (3),

the second diode (72) anode is connected to the second node of said switching bridge (3), and the second diode (72) cathode is connected to the third node of said switching bridge (3),

the third active switch (33) of said switching bridge (3) is connected between the first and fourth nodes of said switching bridge (3),

the third diode (73) anode is connected to the fourth node of said switching bridge (3), and the third diode (73) cathode is connected to the first node of said switching bridge (3),

the fourth active switch (34) of said switching bridge (3) is connected between the fourth and second nodes of said switching bridge (3), and

the fourth diode (74) anode is connected to the second node of said switching bridge (3), and the fourth diode (74) cathode is connected to the fourth node of said switching bridge (3).

32. The boost bridge amplifier of claim 31, wherein

the first node of the first filtering inductor (41) is connected to the first node of the first filtering capacitor (81),

the second node of said bridge capacitor (6) is connected to the second node of the first filtering capacitor (81),

the first node of the second filtering inductor (42) is connected to the first node of the second filtering capacitor (82), and

the second node of said bridge capacitor (6) is connected to the second node of the second filtering capacitor (82).

33. The boost bridge amplifier of claim 32, wherein

the third node of said switching bridge (3) is connected to the first node of the filtering capacitor (91),

the second node of said filtering capacitor (91) is connected to the fir node of an additional load (92), and

the second node of said additional load (92) is connected to the fourth node of said switching bridge (3).

34. The boost bridge amplifier of claim 32, wherein load (5) is a dual voice coil loudspeaker.

35. The boost bridge amplifier of claim 32, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

36. The boost bridge amplifier of claim 31, wherein

the second node of said power supply (1) is connected to the first node of the first phase (51) of said load (5) and the first node of the second phase (52) of said load (5),

the first node of said power supply (1) is connected to the first node of said switching bridge (3) and the first node of said bridge capacitor (6), and

the second node of said bridge capacitor (6) is connected to the second node of said switching bridge (3).

37. The boost bridge amplifier of claim 36, wherein

the first node of the first filtering inductor (41) is connected to the first node of the first filtering capacitor (81),

the first node of said bridge capacitor (6) is connected to the second node of the first filtering capacitor (81),

the first node of the second filtering inductor (42) is connected to the first node of the second filtering capacitor (82), and

the first node of said bridge capacitor (6) is connected to the second node of the second filtering capacitor (82).

38. The boost bridge amplifier of claim 37, wherein

the third node of said switching bridge (3) is connected to the first node of the filtering capacitor (91),

the second node of said filtering capacitor (91) is connected to the first node of an additional load (92), and

the second node of said additional load (92) is connected to the fourth node of said switching bridge (3).

39. The boost bridge amplifier of claim 37, wherein load (5) is a dual voice coil loudspeaker.

40. The boost bridge amplifier of claim 37, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

41. The boost bridge amplifier of claim 36, wherein

the third node of said switching bridge (3) is connected to the first node of the filtering capacitor (91),

the second node of said filtering capacitor (91) is connected to the first node of an additional load (92), and

the second node of said additional load (92) is connected to the fourth node of said switching bridge (3).

42. The boost bridge amplifier of claim 36, wherein load (5) is a dual voice coil loudspeaker.

43. The boost bridge amplifier of claim 36, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

44. The boost bridge amplifier of claim 31, wherein the third node of said switching bridge (3) is connected to the first node of the filtering capacitor (91),

the second node of said filtering capacitor (91) is connected to the first node of an additional load (92), and

the second node of said additional load (92) is connected to the fourth node of said switching bridge (3).

45. The boost bridge amplifier of claim 31, wherein load (5) is a dual voice coil loudspeaker.

46. The boost bridge amplifier of claim 31, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

47. The boost bridge amplifier of claim 22, wherein

the first node of said power supply (1) is connected to the first node of the first phase (51) of said load (5), the first node of the second phase (52) of said load (5), and the first node of the third phase (53) of said load (5),

the second node of said power supply (1) is connected to the second node of said switching bridge (3) and the second node of said bridge capacitor (6),

the first node of said bridge capacitor (6) is connected to the first node of said switching bridge (3),

the second node of the first phase (51) of said load (5) is connected to the first node of the first filtering inductor (41),

the second node of the first filtering inductor (41) is connected to the third node of said switching bridge (3),

the second node of the second phase (52) of said load (5) is connected to the first node of the second filtering inductor (42),

the second node of the second filtering inductor (42) is connected to the fourth node of said switching bridge (3),

the second node of the third phase (53) of said load (5) is connected to the first node of the third filtering inductor (43),

the second node of the third filtering inductor (43) is connected to the fifth node of said switching bridge (3),

the first active switch (31) of said switching bridge (3) is connected between the first and third nodes of said switching bridge (3),

the first diode (71) anode is connected to the third node of said switching bridge (3), and the first diode (71) cathode is connected to the first node of said switching bridge (3),

the second active switch (32) of said switching bridge (3) is connected between the third and second nodes of said switching bridge (3),

the second diode (72) anode is connected to the second node of said switching bridge (3), and the second diode (72) cathode is connected to the third node of said switching bridge (3),

the third active switch (33) of said switching bridge (3) is connected between the first and fourth nodes of said switching bridge (3),

the third diode (73) anode is connected to the fourth node of said switching bridge (3), and the third diode (73) cathode is connected to the first node of said switching bridge (3),

the fourth active switch (34) of said switching bridge (3) is connected between the fourth and second nodes of said switching bridge (3),

the fourth diode (74) anode is connected to the second node of said switching bridge (3), and the fourth diode (74) cathode is connected to the fourth node of said switching bridge (3),

the fifth active switch (35) of said switching bridge (3) is connected between the first and fifth nodes of said switching bridge (3),

the fifth diode (75) anode is connected to the fifth node of said switching bridge (3), and the fifth diode (75) cathode is connected to the first node of said switching bridge (3),

the sixth active switch (36) of said switching bridge (3) is connected between the fifth and second nodes of said switching bridge (3), and

the sixth diode (76) anode is connected to the second node of said switching bridge (3), and the sixth diode (76) cathode is connected to the fifth node of said switching bridge (3).

48. The boost bridge amplifier of claim 47, wherein

the first node of the first filtering inductor (41) is connected to the first node of the first filtering capacitor (81),

the second node of said bridge capacitor (6) is connected to the second node of the first filtering capacitor (81),

the first node of the second filtering inductor (42) is connected to the first node of the second filtering capacitor (82),

the second node of said bridge capacitor (6) is connected to the second node of the second filtering capacitor (82),

the first node of the third filtering inductor (43) is connected to the first node of the third filtering capacitor (83), and

the second node of said bridge capacitor (6) is connected to the second node of the third filtering capacitor (83).

49. The boost bridge amplifier of claim 48, wherein load (5) is a three-phase electric motor.

50. The boost bridge amplifier of claim 48, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

51. The boost bridge amplifier of claim 47, wherein

the second node of said power supply (1) is connected to the first node of the first phase (51) of said load (5), the first node of the second phase (52) of said load (5), and the first node of the third phase (53) of said load (5),

the first node of said power supply (1) is connected to the first node of said switching bridge (3) and the first node of said bridge capacitor (6), and

the second node of said bridge capacitor (6) is connected to the second node of said switching bridge (3).

52. The boost bridge amplifier of claim 51, wherein

the first node of the first filtering inductor (41) is connected to the first node of the first filtering capacitor (81),

the first node of said bridge capacitor (6) is connected to the second node of the first filtering capacitor (81),

the first node of the second filtering inductor (42) is connected to the first node of the second filtering capacitor (82),

the first node of said bridge capacitor (6) is connected to the second node of the second filtering capacitor (82),

the first node of the third filtering inductor (43) is connected to the first node of the third filtering capacitor (83), and

the first node of said bridge capacitor (6) is connected to the second node of the third filtering capacitor (83).

53. The boost bridge amplifier of claim 52, wherein load (5) is a three-phase electric motor.

54. The boost bridge amplifier of claim 52, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

55. The boost bridge amplifier of claim 51, wherein load (5) is a three-phase electric motor.

56. The boost bridge amplifier of claim 51, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

57. The boost bridge amplifier of claim 47, wherein load (5) is a three-phase electric motor.

58. The boost bridge amplifier of claim 47, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

59. The boost bridge amplifier of claim 22, wherein load (5) is a dual voice coil loudspeaker.

60. The boost bridge amplifier of claim 22, wherein load (5) is a three-phase electric motor.

61. A boost bridge amplifier comprising:

a power supply (1), having a first and a second nodes,

a poly-phase load (5), having a first and a second nodes per each phase,

a switching bridge (3), having a first and a second nodes, common for all phases, and an output node per each phase,

a bridge capacitor (6), having a first and a second nodes,

characterized in that,

the first node of said power supply (1) is connected to the first node of each phase of said load (5) and the second node of said bridge capacitor (6),

the second node of said power supply (1) is connected to the second node of said switching bridge (3),

the first node of said bridge capacitor (6) is connected to the first node of said switching bridge (3),

the second node of each phase of said load (5) is connected to the output node of the appropriate phase of said switching bridge (3),

the load (5) comprises resistance and smoothing inductance connected in series, and

the power supply (1) is DC power supply.

62. The boost bridge amplifier of claim 61, wherein

the second node of a first phase (51) of said load (5) is connected to the third node of said switching bridge (3),

the first active switch (31) of said switching bridge (3) is connected between the first and third nodes of said switching bridge (3),

the first diode (71) anode is connected to the third node of said switching bridge (3), and the first diode (71) cathode is connected to the first node of said switching bridge (3),

the second active switch (32) of said switching bridge (3) is connected between the third and second nodes of said switching bridge (3), and

the second diode (72) anode is connected to the second node of said switching bridge (3), and the second diode (72) cathode is connected to the third node of said switching bridge (3).

63. The boost bridge amplifier of claim 62, wherein

the second node of said power supply (1) is connected to the first node of the first phase (51) of said load (5) and the first node of said bridge capacitor (6),

the first node of said power supply (1) is connected to the first node of said switching bridge (3), and

the second node of said bridge capacitor (6) is connected to the second node of said switching bridge (3).

64. The boost bridge amplifier of claim 63, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

65. The boost bridge amplifier of claim 62, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

66. The boost bridge amplifier of claim 61, wherein

the first node of said power supply (1) is connected to the fist node of the first phase (51) of said load (5), the first node of the second phase (52) of said load (5) and the second node of said bridge capacitor (6),

the second node of said power supply (1) is connected to the second node of said switching bridge (3),

the first node of said bridge capacitor (6) is connected to the first node of said switching bridge (3),

the second node of the first phase (51) of said load (5) is connected to the third node of said switching bridge (3),

the second node of the second phase (52) of said load (5) is connected to the fourth node of said switching bridge (3),

the first active switch (31) of said switching bridge (3) is connected between the first and third nodes of said switching bridge (3),

the first diode (71) anode is connected to the third node of said switching bridge (3), and the first diode (71) cathode is connected to the first node of said switching bridge (3),

the second active switch (32) of said switching bridge (3) is connected between the third and second nodes of said switching bridge (3),

the second diode (72) anode is connected to the second node of said switching bridge (3), and the second diode (72) cathode is connected to the third node of said switching bridge (3),

the third active switch (33) of said switching bridge (3) is connected between the first and fourth nodes of said switching bridge (3),

the third diode (73) anode is connected to the fourth node of said switching bridge (3), and the third diode (73) cathode is connected to the first node of said switching bridge (3),

the fourth active switch (34) of said switching bridge (3) is connected between the fourth and second nodes of said switching bridge (3), and

the fourth diode (74) anode is connected to the second node of said switching bridge (3), and the fourth diode (74) cathode is connected to the fourth node of said switching bridge (3).

67. The boost bridge amplifier of claim 66, wherein

the second node of said power supply (1) is connected to the first node of the first phase (51) of said load (5), the first node of the second phase (52) of said load (5) and the first node of said bridge capacitor (6),

the first node of said power supply (1) is connected to the first node of said switching bridge (3), and

the second node of said bridge capacitor (6) is connected to the second node of said switching bridge (3).

68. The boost bridge amplifier of claim 67, wherein the third node of said switching bridge (3) is connected to the first node of the filtering capacitor (91),

the second node of said filtering capacitor (91) is connected to the first node of an additional load (92), and

the second node of said additional load (92) is connected to the fourth node of said switching bridge (3).

69. The boost bridge amplifier of claim 67, wherein load (5) is a dual voice coil loudspeaker.

70. The boost bridge amplifier of claim 67, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

71. The boost bridge amplifier of claim 66, wherein

the third node of said switching bridge (3) is connected to the first node of the filtering capacitor (91),

the second node of said filtering capacitor (91) is connected to the first node of an additional load (92), and

the second node of said additional load (92) is connected to the fourth node of said switching bridge (3).

72. The boost bridge amplifier of claim 66, wherein load (5) is a dual voice coil loudspeaker.

73. The boost bridge amplifier of claim 66, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

74. The boost bridge amplifier of claim 61, wherein

the first node of said power supply (1) is connected to the first node of the first phase (51) of said load (5), the first node of the second phase (52) of said load (5), the first node of the third phase (53) of said load (5), and the second node of said bridge capacitor (6),

the second node of said power supply (1) is connected to the second node of said switching bridge (3),

the first node of said bridge capacitor (6) is connected to the first node of said switching bridge (3),

the second node of the first phase (51) of said load (5) is connected to the third node of said switching bridge (3),

the second node of the second phase (52) of said load (5) is connected to the fourth node of said switching bridge (3),

the second node of the third phase (53) of said load (5) is connected to the fifth node of said switching bridge (3),

the first active switch (31) of said switching bridge (3) is connected between the first and third nodes of said switching bridge (3),

the first diode (71) anode is connected to the third node of said switching bridge (3), and the first diode (71) cathode is connected to the first node of said switching bridge (3),

the second active switch (32) of said switching bridge (3) is connected between the third and second nodes of said switching bridge (3),

the second diode (72) anode is connected to the second node of said switching bridge (3), and the second diode (72) cathode is connected to the third node of said switching bridge (3),

the third active switch (33) of said switching bridge (3) is connected between the first and fourth nodes of said switching bridge (3),

the third diode (73) anode is connected to the fourth node of said switching bridge (3), and the third diode (73) cathode is connected to the first node of said switching bridge (3),

the fourth active switch (34) of said switching bridge (3) is connected between the fourth and second nodes of said switching bridge (3),

the fourth diode (74) anode is connected to the second node of said switching bridge (3), and the fourth diode (74) cathode is connected to the fourth node of said switching bridge (3),

the fifth active switch (35) of said switching bridge (3) is connected between the first and fifth nodes of said switching bridge (3),

the fifth diode (75) anode is connected to the fifth node of said switching bridge (3), and the fifth diode (75) cathode is connected to the first node of said switching bridge (3),

the sixth active switch (36) of said switching bridge (3) is connected between the fifth and second nodes of said switching bridge (3), and

the sixth diode (76) anode is connected to the second node of said switching bridge (3), and the sixth diode (76) cathode is connected to the fifth node of said switching bridge (3).

75. The boost bridge amplifier of claim 74, wherein

the second node of the said power supply (1) is connected to the first node of the first phase (51) of said load (5), the first node of the second phase (52) of said load (5), the first node of the third phase (53) of said load (5) and the first node of said bridge capacitor (6),

the first node of the said power supply (1) is connected to the first node of said switching bridge (3), and

the second node of said bridge capacitor (6) is connected to the second node of said switching bridge (3).

76. The boost bridge amplifier of claim 75, wherein load (5) is a three-phase electric motor.

77. The boost bridge amplifier of claim 75, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

78. The boost bridge amplifier of claim 74, wherein load (5) is a three-phase electric motor.

79. The boost bridge amplifier of claim 74, wherein all active switches are semiconductor switches, such as mosfets, IGBT, bipolar transistors or MCT.

80. The boost bridge amplifier of claim 61, wherein load (5) is a dual voice coil loudspeaker.

81. The boost bridge amplifier of claim 61, wherein load (5) is a three-phase electric motor.