Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads

• US 6,985,337 B2
• Filed: 03/28/2005
• Issued: 01/10/2006
• Est. Priority Date: 09/17/2001
• Status: Expired due to Fees

• Current Assignee: Headway Technologies Incorporated
• Original Assignee: Headway Technologies Incorporated
• Inventors: Ju, Kochan, Li, Min, Dieny, Bernard, Horng, Cheng, Liao, Simon
• Primary Examiner(s): LETSCHER, GEORGE J
• Application Number:
  US11/091,281
• Publication Number:
  US 20050168880A1
• Time in Patent Office: 288 Days
• Field of Search: 360/324, 360/324.11, 360/324.12
• US Class Current: 360/324
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: G11B 5/3967 Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read G11B5/3906 takes precedence
• CPC Class Codes: H01F 10/3259 Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32

Abstract

Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

Claims

1. A magnetic nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stack having increased perpendicular resistance and enhanced magnetoresistive properties, comprising:

a substrate;

a first metallic, non-magnetic spacer layer formed upon said substrate;

a first ferromagnetic layer formed upon said first metallic non-magnetic spacer layer;

a first magnetic nano-oxide layer formed upon said first ferromagnetic layer;

a second metallic, non-magnetic spacer layer formed on said first magnetic nano-oxide layer;

a second magnetic nano-oxide layer formed upon said second metallic, non-magnetic spacer layer;

a second ferromagnetic layer formed upon said second magnetic nano-oxide layer;

a third metallic, non-magnetic spacer layer formed upon said second ferromagnetic layer.

2. The structure of claim 1 wherein the first, second and third metallic, non-magnetic spacer layers are composed of material selected from the group consisting of the metallic, non-magnetic materials Cu, Au and Ag and wherein said layers are formed to a thickness of between approximately 0.5 nm and 10 nm.

3. The structure of claim 1 wherein the first and second ferromagnetic layers are ferromagnetic transition metal alloy layers chosen from the group consisting of Ni₈₀Fe₂₀ and Co₉₀Fe₁₀ and are formed to a thickness of between approximately 0.5 nm and 5.0 nm.

4. A method of forming magnetic nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stack having increased perpendicular resistance and enhanced magnetoresistive properties, comprising:

providing a substrate;

forming upon said substrate a first metallic, non-magnetic spacer layer;

forming upon said first metallic non-magnetic spacer layer a first ferromagnetic layer;

forming upon said first ferromagnetic layer a first magnetic nano-oxide layer;

forming upon said first magnetic nano-oxide layer a second metallic, non-magnetic spacer layer;

forming upon said second metallic, non-magnetic spacer layer a second magnetic nano-oxide layer;

forming upon said second magnetic nano-oxide layer a second ferromagnetic layer;

forming upon said second ferromagnetic layer a third metallic, non-magnetic spacer layer.

5. The method of claim 4 wherein the first, second and third metallic, non-magnetic spacer layers are composed of material selected from the group consisting of the metallic, non-magnetic materials Cu, Au and Ag and wherein said layers are formed to a thickness of between approximately 0.5 nm and 10 nm.

6. The method of claim 4 wherein the first and second ferromagnetic layers are ferromagnetic transition metal alloy layers chosen from the group consisting of Ni₈₀Fe₂₀ and Co₉₀Fe₁₀ and are formed to a thickness of between approximately 0.5 nm and 5.0 nm.

7. The method of claim 4 wherein the first and second magnetic nano-oxide layers are separately chosen from the group of materials consisting of Fe₃O₄, CrO₂, layers formed by surface oxidation of NiFe or CoFe, CoFeNi based spinel structures, ferrimagnetic garnets, manganites or other ferromagnetic perovskites and ferromagnetic nitrides and are formed of to a thickness between approximately 0.4 nm and 6.0 nm.

8. The method of claim 7 wherein the first and second magnetic nano-oxide layers are formed of the same material and same thickness for the maximum magnetoresistive effect.