RF device and communication apparatus using the same

• US 6,985,712 B2
• Filed: 08/26/2002
• Issued: 01/10/2006
• Est. Priority Date: 08/27/2001
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Ishizaki, Toshio, Yamada, Toru, Yamakawa, Takehiko
• Primary Examiner(s): Vo, Nguyen T.
• Assistant Examiner(s): Le, Nhan T.
• Application Number:
  US10/228,646
• Publication Number:
  US 20030068998A1
• Time in Patent Office: 1,233 Days
• Field of Search: 455/339, 455/334, 455/333, 455/323, 333/246, 333/260, 333/166, 333/185
• US Class Current: 455/333
• CPC Class Codes: H01P 1/15 by semiconductor devices
• CPC Class Codes: H01P 1/20345 Multilayer filters
• CPC Class Codes: H01P 1/213 combining or separating two or more different frequencies H01P1/215 takes precedence

Abstract

An RF device includes a first substrate having a lower relative dielectric constant, a first RF circuit for a lower frequency band provided in the first substrate, a second substrate having a higher relative dielectric constant larger than the lower relative dielectric constant, and a second RF circuit for a higher frequency band having a part of the second RF circuit sandwiched between the first substrate and the second substrate. The first RF circuit and the second RF circuit are connected to each other and the second substrate is partially overlaid on the first substrate. A semiconductor device or passive device is provided on a region in the surface of the first substrate on which the second substrate is not overlaid, and a multilayered wiring pattern made of copper or silver is formed in the first substrate to form the first RF circuit.

Claims

1. An RF device comprising:

a first substrate made of a material with a lower relative dielectric constant;

a first RF circuit for a lower frequency band, which is provided in said first substrate;

a second substrate made of a material with a higher relative dielectric constant larger than said lower relative dielectric constant, and

a second RF circuit for a higher frequency band, at least a part of which is provided in a vicinity of said second substrate,

wherein said first RF circuit and said second RF circuit are connected to each other,

said part of said second RF circuit is sandwiched between said first substrate and said second substrate,

said second substrate is partially overlaid on said first substrate, a semiconductor device or passive device is provided on a region in the surface of said first substrate on which said second substrate is not overlaid, and a multilayered wiring pattern made of copper or silver is formed in said first substrate, whereby said first RF circuit is formed.

2. The RF device according to claim 1, wherein said second substrate comprises a plurality of substrates disposed on said first substrate with spaced apart from each other, one of said plurality of substrates constitutes a transmitting filter, and another of said plurality of substrates constitutes a receiving filter.

3. The RF device according to claim 1, wherein said lower frequency band is a frequency band for a TDMA mode, and said higher frequency band is a frequency band for a CDMA mode.

4. The RF device according to claim 1, wherein each of said first and second substrates is composed of a multilayered and integrally molded ceramic.

5. The RF device according to claim 1, wherein said first substrate is made of a low temperature cofired ceramic and said second substrate is made of a high temperature cofired ceramic.

6. The RF device according to claim 1, wherein said part of said second RF circuit is a resonator electrode, and said resonator electrode comprises a metal foil.

7. The RF device according to claim 6, wherein the RF device is integrated by filling a space defined by said first substrate, said second substrate and said resonator electrode with a thermosetting resin.

8. The RF device according to claim 1, wherein said semiconductor device includes any one of a PIN diode device, a GaAs semiconductor device, a field effect transistor (FET) device and a varactor diode device, and switching between said first RF circuit and said second RF circuit is realized by an operation of any one of said devices.

9. The RF device according to claim 1, wherein a whole or a part of said second substrate is covered with a shielding electrode.

10. The RF device according to claim 1, wherein said passive device includes a SAW filter with an electrode hermetically sealed.

11. A communication apparatus, comprising the RF device according to any one of claims 1 to 10, a transmitting circuit, a receiving circuit and an antenna which are connected to said RF device.