Microscale vacuum tube device and method for making same

• US 6,987,027 B2
• Filed: 08/23/2003
• Issued: 01/17/2006
• Est. Priority Date: 08/23/2002
• Status: Expired due to Fees

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Jin, Sungho
• Primary Examiner(s): Booth, Richard A.
• Application Number:
  US10/646,502
• Publication Number:
  US 20040075379A1
• Time in Patent Office: 878 Days
• Field of Search: 438/20, 445/24, 445/50
• US Class Current: 438/20
• CPC Class Codes: H01J 21/10 with one or more immovable internal control electrodes, e.g. triode, pentode, octode
• CPC Class Codes: H01J 3/021 Electron guns using a field emission, photo emission, or secondary emission electron source
• CPC Class Codes: H01J 9/025 of field emission cathodes
• CPC Class Codes: Y10S 977/939 Electron emitter, e.g. spindt emitter tip coated with nanoparticles

Abstract

The invention comprises a method of fabricating a vacuum microtube device comprising the steps of forming a cathode layer comprising an array of electron emitters, forming a gate layer comprising an array of openings for passing electrons from the electron emitters, and forming an anode layer for receiving electrons from the emitters. The cathode gate layer and the anode layer are vertically aligned and bonded together with intervening spacers on a silicon substrate so that electrons from respective emitters pass through respective gate openings to the anode. The use of substrate area is highly efficient and electrode spacing can be precisely controlled. An optional electron multiplying structure providing secondary electron emission material can be disposed between the gate layer and the anode in the path of emitted electrons.

Claims

1. A method of fabricating a vacuum microtube device comprising the steps of:

forming a cathode layer comprising an array of carbon nanotube electron emitters;

forming a separate gate layer comprising an array of openings for passing electrons from the electron emitters;

forming a separate anode layer comprising an array of anodes for receiving electrons; and

vertically aligning and spacing the cathode layer, the gate layer and the anode layer and then bonding them together on a substrate comprising silicon so that electrons from the emitters pass through the gate openings to the anode.

2. The method of claim 1 wherein the cathode layer comprises silicon.

3. The method of claim 1 wherein the cathode layer, the gate layer and the anode layer are bonded together with one or more intervening spacers.

4. The method of claim 1 further comprising the step of disposing between the gate layer and the anode, an electron multiplying structure comprising secondary electron emission material in the path of emitted electrons for multiplying the electron flow between the cathode and the anode.