Method for making electronic devices including silicon and LTCC and devices produced thereby

• US 6,987,033 B2
• Filed: 08/19/2004
• Issued: 01/17/2006
• Est. Priority Date: 12/19/2000
• Status: Expired due to Term

• Current Assignee: Harris Corporation (L3Harris Technologies, Inc.)
• Original Assignee: Harris Corporation (L3Harris Technologies, Inc.)
• Inventors: Gamlen, Carol, Rumpf, Raymond C., Newton, Charles M., Pike, Randy T., O'Dowd, Betty
• Primary Examiner(s): Zarneke, David A.
• Application Number:
  US10/921,511
• Publication Number:
  US 20050019986A1
• Time in Patent Office: 516 Days
• Field of Search: None
• US Class Current: 438/122
• CPC Class Codes: H01L 21/4857 Multilayer substrates multilayer metallisation on monolayer substrate H01L21/4846
• CPC Class Codes: H01L 21/4882 Assembly of heatsink parts
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/83894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/427 Cooling by change of state, e.g. use of heat pipes by liquefied gas H01L23/445
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 24/31 Structure, shape, material or disposition of the layer connectors after the connecting process
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15151 : the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

A method for making an electronic device includes positioning first and second members so that opposing surfaces thereof are in contact with one another, the first member comprising silicon and the second member comprising a low temperature co-fired ceramic (LTCC) material. The method further includes anodically bonding together the opposing surfaces of the first and second members to form a hermetic seal therebetween. The anodic bonding provides a secure and strong bond between the members without using adhesive. The method may further include forming at least one cooling structure in at least one of the first and second members. The least one cooling structure may comprise at least one first micro-fluidic cooling structure in the first member, and at least one second micro-fluidic cooling structure in the second member aligned with the at least one first micro-fluidic cooling structure.

Claims

1. A method for making an electronic device comprising:

positioning first and second members so that opposing surfaces thereof are in contact with one another, the first member comprising silicon and the second member comprising a low temperature co-fired ceramic (LTCC) material; and

anodically bonding together the opposing surfaces of the first and second members to form a hermetic seal therebetween.

2. A method according to claim 1 wherein said first and second members have substantially planar major opposing surfaces.

3. A method according to claim 1 wherein anodically bonding comprises applying a voltage across the first and second members.

4. A method according to claim 3 wherein anodically bonding further comprises applying pressure to the opposing surfaces of the first and second members.

5. A method according to claim 4 wherein anodically bonding further comprises heating the first and second members.

6. A method according to claim 1 further comprising cleaning the opposing surfaces of the first and second members prior to anodically bonding.

7. A method according to claim 1 further comprising forming at least one cooling structure in at least one of the first and second members.

8. A method according to claim 7 wherein the at least one cooling structure comprises at least one micro-fluidic cooling structure.

9. A method according to claim 7 further comprising positioning at least one integrated circuit adjacent the at least one cooling structure.

10. A method according to claim 9 wherein the at least one integrated circuit comprises electrical connections;

and wherein the second member carries external electrical connections connected to the electrical connections of the at least one integrated circuit.

11. A method according to claim 1 wherein anodically bonding comprises applying a voltage in a range of about 500 to 1000 volts across the first and second members.

12. A method according to claim 1 wherein anodically bonding comprises applying pressure in a range of about 1 to 20 psi to the opposing surfaces of the first and second members.

13. A method according to claim 1 wherein anodically bonding comprises heating the first and second members to a temperature in a range of about 100 to 150°

C.

14. A method for making an electronic device comprising:

positioning first and second members so that opposing generally planar major surfaces thereof are in contact with one another, the first member comprising silicon and the second member comprising a low temperature co-fired ceramic (LTCC) material, the first member also having at least one first micro-fluidic structure and the second member also having at least one second micro-fluidic cooling structure aligned with the at least one first micro-fluidic cooling structure; and

anodically bonding together the opposing generally planar major surfaces of the first and second members to form a hermetic seal therebetween.

15. A method according to claim 14 wherein anodically bonding comprises applying a voltage across the first and second members.

16. A method according to claim 15 wherein anodically bonding further comprises applying pressure to the opposing surfaces of the first and second members.

17. A method according to claim 16 wherein anodically bonding further comprises heating the first and second members.

18. A method according to claim 14 further comprising cleaning the opposing surfaces of the first and second members prior to anodically bonding.

19. A method according to claim 14 further comprising positioning at least one integrated circuit adjacent the at least one first micro-fluidic cooling structure.

20. A method according to claim 19 wherein the at least one integrated circuit comprises electrical connections;

and wherein the second member carries external electrical connections connected to the electrical connections of the at least one integrated circuit.