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Trench MOSFET with increased channel density

  • US 6,987,040 B2
  • Filed: 09/27/2004
  • Issued: 01/17/2006
  • Est. Priority Date: 08/28/2000
  • Status: Expired due to Term
First Claim
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1. A method for forming a semiconductor device having a major surface, comprising:

  • providing a semiconductor material body having a trench with a vertical sidewall, wherein the trench extends from the major surface to a depth within the semiconductor material body;

    forming a gate structure having a top surface within the trench, wherein the top surface of the gate structure is below the major surface;

    forming a source region along the vertical sidewall of the trench, wherein a vertical depth of the source region along the vertical sidewall is greater than a horizontal width of the source region along the major surface of the semiconductor material body; and

    forming a conductive electrode layer adjacent the vertical sidewall of the trench above the gate structure and below the major surface making contact with the source region along a portion of the vertical sidewall.

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