Phobic barrier meniscus separation and containment

• US 6,988,326 B2
• Filed: 09/30/2004
• Issued: 01/24/2006
• Est. Priority Date: 09/30/2002
• Status: Expired due to Fees

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Anderson, Thomas W., O'Donnell, Robert J.
• Primary Examiner(s): GRAVINI, STEPHEN MICHAEL
• Application Number:
  US10/957,384
• Publication Number:
  US 20050217135A1
• Time in Patent Office: 481 Days
• Field of Search: 343/10, 343/51, 343/81, 344/42, 34/76, 34/78, 34/79, 118/400, 118/317
• US Class Current: 34/381
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67023 for general liquid treatment, e.g. etching followed by cleaning
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/67034 for drying
• CPC Class Codes: H01L 21/6704 for wet cleaning or washing
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67063 for etching
• CPC Class Codes: H01L 21/67075 for wet etching
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles

Abstract

In one of the many embodiments, a method for processing a substrate is provided which includes generating a first fluid meniscus and a second fluid meniscus on a surface of the substrate where the first fluid meniscus being substantially adjacent to the second fluid meniscus. The meniscus also includes substantially separating the first fluid meniscus and the second fluid meniscus with a barrier.

Claims

1. A method for processing a substrate, comprising:

generating a first fluid meniscus and a second fluid meniscus on a surface of the substrate, the first fluid meniscus being substantially adjacent to the second fluid meniscus, and the first fluid meniscus and the second fluid meniscus being generated between a surface of a proximity head and the surface of the substrate; and

substantially separating the first fluid meniscus and the second fluid meniscus with a barrier.

2. A method for processing a substrate as recited in claim 1, further comprising:

processing the surface of the substrate with the first fluid meniscus, and processing the surface of substrate with the second fluid meniscus.

3. A method for processing a substrate as recited in claim 2, wherein processing the surface of the substrate with the first fluid meniscus includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, or a lithography operation.

4. A method for processing a substrate as recited in claim 2, wherein processing the surface of the substrate with the second fluid meniscus includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, a drying operation, or a lithography operation.

5. A method for processing a substrate as recited in claim 1, wherein generating the first fluid meniscus includes applying a first fluid to the surface of the substrate through a first fluid inlet and removing the first fluid from the surface of the substrate through a first fluid outlet.

6. A method for processing a substrate as recited in claim 5, wherein generating the second fluid meniscus includes applying a second fluid to the surface of the substrate through a second fluid inlet and removing the second fluid from the surface of the substrate through the first fluid outlet and a second fluid outlet and applying a third fluid through a third inlet.

7. A method for processing a substrate as recited in claim 5, wherein the first fluid is one of a lithographic fluid, an etching fluid, a plating fluid, a cleaning fluid, or a rinsing fluid.

8. A method for processing a substrate as recited in claim 6, wherein the second fluid is one of a lithographic fluid, an etching fluid, a plating fluid, a cleaning fluid, a drying fluid, and or a rinsing fluid.

9. A method for processing a substrate as recited in claim 6, wherein the third fluid decreases a surface tension of the second fluid.

10. A method for processing a substrate as recited in claim 1, wherein the barrier is at least partially phobic to at least a first fluid meniscus or the second fluid meniscus.

11. A method for processing a substrate as recited in claim 1, wherein a portion of the barrier is phobic to the first fluid meniscus and a portion of the barrier is philic to the first fluid meniscus.

12. A method for processing a substrate as recited in claim 1, wherein the barrier is defined between a first set of conduits configured to generate the first fluid meniscus and a second set of conduits configured to generate the second fluid meniscus.

13. An apparatus for processing a substrate, comprising:

a proximity head including,

a first set of conduits defined within the proximity head, the first set of conduits configured to generate a first fluid meniscus between a surface of the proximity head and a surface of the substrate;

a second set of conduits defined within the proximity head, the second set of conduits configured to generate a second fluid meniscus between the surface of the proximity head and the surface of the substrate; and

a barrier defined between the first set of conduits and the second set of conduits, the barrier configured to substantially separate the first fluid meniscus and the second fluid meniscus.

14. An apparatus for processing a substrate as recited in claim 13, wherein the first set of conduits include,

at least one inlet for applying a first fluid to the surface of the wafer, and

at least one outlet for removing at least the first fluid from the surface of the wafer.

15. An apparatus for processing a substrate as recited in claim 13, wherein the second set of conduits include,

at least one inlet for applying a second fluid to the surface of the wafer, and

at least one outlet for removing the second fluid from the surface of the wafer,

wherein the at least one outlet for removing the first fluid from the surface of the wafer also removes at least a portion of the second fluid.

16. An apparatus for processing a substrate as recited in claim 15, wherein the second set of conduits further includes,

at least one inlet for applying a third fluid to the surface of the wafer.

17. An apparatus for processing a substrate as recited in claim 13, wherein the first fluid meniscus is capable of executing one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, or a lithography operation.

18. An apparatus for processing a substrate as recited in claim 13, wherein the second fluid meniscus is capable of executing one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, a drying operation, or a lithography operation.

19. An apparatus for processing a substrate as recited in claim 13, wherein the third fluid decreases a surface tension of the second fluid.

20. An apparatus for processing a substrate as recited in claim 13, wherein the barrier is at least partially phobic to at least one of the first fluid meniscus and the second fluid meniscus.

21. An apparatus for processing a substrate as recited in claim 13, wherein a portion of the barrier is phobic to at least one of the first fluid meniscus and the second fluid meniscus and a portion of the barrier is philic to at least one of the first fluid meniscus and the second fluid meniscus.

22. An apparatus for processing a substrate, comprising:

a proximity head capable of generating a first fluid meniscus and capable of generating a second fluid meniscus, the proximity head including,

at least one first inlet defined in a processing surface of the proximity head configured to apply a first fluid to the surface of the wafer;

at least one first outlet defined in the processing surface of the proximity head configured to remove the first fluid and at least a portion of a second fluid from the surface of the wafer;

at least one second inlet defined in the processing surface of the proximity head configured to apply the second fluid to the surface of the wafer;

at least one second outlet defined in the processing surface of the proximity head configured to remove at least a portion of the second fluid from the surface of the wafer; and

a barrier defined between the at least one first outlet and the at least one second outlet, the barrier being configured to substantially separate the first fluid meniscus and a the second fluid meniscus.

23. An apparatus for processing a substrate as recited in claim 22, wherein

the proximity head further includes,

at least one third inlet defined in the processing surface of the proximity head configured to apply a third fluid to the surface of the wafer.

24. An apparatus for processing a substrate as recited in claim 22, wherein the first fluid meniscus is capable of executing one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, or a lithography operation.

25. An apparatus for processing a substrate as recited in claim 22, wherein the second fluid meniscus is capable of executing one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, a drying operation, or a lithography operation.

26. An apparatus for processing a substrate as recited in claim 23, wherein the third fluid decreases a surface tension of the second fluid.

27. An apparatus for processing a substrate as recited in claim 23, wherein the barrier is phobic to at least one of the first fluid meniscus and the second fluid meniscus.

28. An apparatus for processing a substrate as recited in claim 23, wherein a portion of the barrier is phobic to at least one of the first fluid meniscus and the second fluid meniscus and a portion of the barrier is philic to at least one of the first fluid meniscus and the second fluid meniscus.