Fabrication of a waveguide taper through ion implantation

• US 6,989,284 B2
• Filed: 05/31/2002
• Issued: 01/24/2006
• Est. Priority Date: 05/31/2002
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Morse, Michael T., Salib, Michael S.
• Primary Examiner(s): Nhu, David
• Application Number:
  US10/159,379
• Publication Number:
  US 20030223696A1
• Time in Patent Office: 1,334 Days
• Field of Search: 438/31, 438/32, 438/40, 438/43, 438/311, 438/514, 438/531, 438/535, 438/942
• US Class Current: 438/31
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/1347 using ion implantation ion implantation in glass C03C23/0055; ion implantation in general C23C
• CPC Class Codes: G02B 6/305 and having an integrated mode-size expanding section, e.g. tapered waveguide

Abstract

A method to form a taper in a semiconductor layer. In one embodiment, the semiconductor layer is formed on a cladding layer. A mask layer is formed on the semiconductor layer. The mask layer is patterned and etched to form at least an angled region and a thick region. An ion implantation process is performed so that the portion under the angled region is implanted to have an interface or surface that is angled relative to the surface of the cladding layer. This angled surface forms part of the vertical taper. The implanted region does not contact the cladding layer, leaving an unimplanted portion to serve as a waveguide. The portion under the thick region is not implanted, forming a coupling end of the taper.

Claims

1. A method for fabricating a taper, comprising:

forming a cladding layer over a substrate;

forming a core layer on the cladding layer; and

implanting ions in a portion of the core layer so that an implanted portion has a surface that is angled relative to a surface of the cladding layer, wherein the implanted ions cause the implanted portion to have a refractive index that is different from an unimplanted portion of the core layer.

2. The method of claim 1 wherein the cladding and core layers are formed using a silicon on insulator (SOI) wafer.

3. The method of claim 1 wherein implanting ions comprises:

forming a mask layer on the core layer; and

removing a portion of the mask layer to form an angled region in the mask layer.

4. The method of claim 1 wherein the mask layer is formed using a gray scale lithography process.

5. The method of claim 4 wherein the mask layer comprises photoresist.

6. The method of claim 4 wherein the mask layer comprises oxide.

7. The method of claim 1 wherein the core layer is formed from a semiconductor material.

8. The method of claim 1 wherein the ions are oxygen ions.

9. The method of claim 1 wherein the implanted portion contacts the cladding layer.

10. The method of claim 1 wherein the implanted portion does not contact the cladding layer.

11. The method of claim 1 wherein the refractive index of the implanted portion is greater than that of the unimplanted portion of the core layer.

12. The method of claim 1 wherein the ions implanted in the implanted portion comprise germanium ions.

13. The method of claim 12 wherein the refractive index of the implanted portion is greater than that of the unimplanted portion of the core layer.