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Distributed feedback semiconductor laser equipment employing a grating

  • US 6,989,550 B2
  • Filed: 06/27/2003
  • Issued: 01/24/2006
  • Est. Priority Date: 11/26/2002
  • Status: Expired due to Term
First Claim
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1. An optical semiconductor device comprising:

  • an InP substrate;

    a plurality of layers, stacked on the InP substrate, including a multi-quantum well active layer made of InGaAlAs;

    an InAlAs electron stopping layer stacked on the plurality of layers;

    an InGaAsP layer including a grating stacked on the InAlAs electron stopping layer; and

    an InP cladding layer stacked on the InGaAsP layer;

    wherein the grating has alternating concave parts and convex parts, the concave parts having a concave depth terminating in a continuous portion of the grating, such that the concave depth of the grating is smaller than a maximum thickness of the InGaAsP layer.

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