Distributed feedback semiconductor laser equipment employing a grating
First Claim
1. An optical semiconductor device comprising:
- an InP substrate;
a plurality of layers, stacked on the InP substrate, including a multi-quantum well active layer made of InGaAlAs;
an InAlAs electron stopping layer stacked on the plurality of layers;
an InGaAsP layer including a grating stacked on the InAlAs electron stopping layer; and
an InP cladding layer stacked on the InGaAsP layer;
wherein the grating has alternating concave parts and convex parts, the concave parts having a concave depth terminating in a continuous portion of the grating, such that the concave depth of the grating is smaller than a maximum thickness of the InGaAsP layer.
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Abstract
The prior art distributed feedback laser having an InGaAlAs active layer involves a problem that its laser characteristics are deteriorated at high temperature due to the high device resistance. According to the present invention, a ridge type laser is fabricated by: forming an InGaAlAs-MQW layer 104 on a n-type InP substrate 101; growing a p-type InGaAlAs-GRIN-SCH layer 105, a p-type InAlAs electron stopping layer 106 and a p-type grating layer 107 in this order on the InGaAlAs-MQW layer 104; forming a grating; and regrowing a p-type InP cladding layer 108 and a p-type InGaAs contact layer in this order. The concave depth of the grating is smaller than the thickness of the p-type grating layer 107.
17 Citations
22 Claims
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1. An optical semiconductor device comprising:
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an InP substrate; a plurality of layers, stacked on the InP substrate, including a multi-quantum well active layer made of InGaAlAs; an InAlAs electron stopping layer stacked on the plurality of layers; an InGaAsP layer including a grating stacked on the InAlAs electron stopping layer; and an InP cladding layer stacked on the InGaAsP layer; wherein the grating has alternating concave parts and convex parts, the concave parts having a concave depth terminating in a continuous portion of the grating, such that the concave depth of the grating is smaller than a maximum thickness of the InGaAsP layer. - View Dependent Claims (4, 7, 10, 12, 14, 15, 18, 19)
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2. An optical semiconductor device comprising:
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an InP substrate; a plurality of layers, stacked on the InP substrate, including a multi-quantum well active layer made of InGaAlAs; an InAlAs electron stopping layer stacked on the plurality of layers; an InGaAsP layer including a grating stacked on the InAlAs electron stopping layer; an InP spacer layer stacked on the InGaAsP layer; an InGaAsP etch stopping layer stacked on the InP spacer layer; and an InP cladding layer stacked on the InGaAsP etch stopping layer; wherein the grating has alternating concave parts and convex parts, the concave parts having a concave depth terminating in a continuous portion of the grating, such that the concave depth of the grating is smaller than a maximum thickness of the InGaAsP layer. - View Dependent Claims (3, 5, 6, 8, 9, 11, 13, 16, 17, 20)
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21. An optical semiconductor device comprising:
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an InP substrate; a plurality of layers, stacked on the InP substrate, including a multi-quantum well active layer made of InGaAlAs; an InAlAs electron stopping layer stacked on the plurality of layers; a group of InGaAsP layers including a grating stacked on the InAlAs electron stopping layer; and an InP cladding layer stacked on the InGaAsP layer; wherein the grating has alternating concave parts and convex parts, the concave parts having a concave depth terminating in a continuous portion of the grating, such that the concave depth of the grating is smaller than a maximum thickness of the group of InGaAsP layers.
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22. An optical semiconductor device comprising:
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an InP substrate; a plurality of layers, stacked on the InP substrate, including a multi-quantum well active layer made of InGaAlAs; an InAlAs electron stopping layer stacked on the plurality of layers; a group of the InGaAsP layers including a grating stacked on the InAlAs electron stopping layer; an InP spacer layer stacked on the InGaAsP layer; an InGaAsP etch stopping layer stacked on the InP spacer layer; and an InP cladding layer stacked on the InGaAsP etch stopping layer; wherein the grating has alternating concave parts and convex parts, the concave parts having a concave depth terminating in a continuous portion of the grating, such that the concave depth of the grating is smaller than a maximum thickness of the InGaAsP layer.
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Specification