Integrated antenna device with resistive connection

• US 6,989,790 B1
• Filed: 05/05/1983
• Issued: 01/24/2006
• Est. Priority Date: 05/11/1982
• Status: Expired due to Fees

• Current Assignee: Qinetiq Limited (QinetiQ Group PLC)
• Original Assignee: Qinetiq Limited (QinetiQ Group PLC)
• Inventors: Rees, Huw David
• Primary Examiner(s): Issing, Gregory C.
• Application Number:
  US06/492,051
• Time in Patent Office: 8,300 Days
• Field of Search: 343/700.MS, 343/720, 343/722, 343/802, 343/374, 343/754, 333/247, 333/250, 455/327, 342/374
• US Class Current: 343/700.0MS
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 23/00 Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 3/247 by switching different parts of a primary active element

Abstract

A planar metal antenna mounted on a semiconductor body and incorporating an active circuit element, for example a diode, integrated in the path of the antenna. Connection between the antenna metal and a peripheral contact is provided by a connecting link of resistive sheet material sub-divided, by voids or by inclusions of high resistive material, into a number of conductive tracks each of width and spacing of dimension small compared with the width of the antenna. The link thus exhibits an effectively high sheet resistivity at high frequency—i.e. at a frequency at or near to the frequency of antenna resonance and thus affords effective hf isolation between the antenna and the contact. At the same time, at dc and at intermediate frequency, a relatively low resistance path is afforded for bias and for extraction of IF signal. The number, width and spacing of the tracks may be varied with distance from the antenna metal to minimize the dc resistivity. Thus the track density may be graded; the link may be comprised of several sections each of different track density. Alternatively, the track density may be made a tapered function of distance from the antenna metal by variation of the size and density of voids or high resistivity inclusions. The connection may be formed of material overlying the semiconductor body. Alternatively, it may be defined in the semiconductor body by dopant implant.

Claims

1. An integrated antenna device comprising:

a planar metal antenna on a semiconductor body, with at least one active circuit element incorporated in the semiconductor body, integrated with the antenna;

a contact located on the semiconductor body, at a point electrically remote from the antenna; and

a connection of resistive sheet material, extending between the antenna device and the contact;

wherein the sheet material connection is subdivided into resistive tracks, each of a width and lateral spacing arranged such that the connection is substantially electrically equivalent to a continuous sheet at the antenna resonant frequency.

2. A device as claimed in claim 1 wherein the resistive tracks are spaced by void areas formed in the sheet material.

3. A device as claimed in claim 1 wherein the resistive tracks are spaced by areas of higher resistivity material.

4. A device as claimed in claim 1 wherein the density of the resistive tracks (ie the number, the width and/or the spacing between tracks) is not constant along the connection.

5. A device as claimed in claim 4 wherein the connection is sub-divided in sections each of a different track density.

6. A device as claimed in claim 1 wherein the connection is of heavily doped semiconductor material and is formed in the semiconductor body.