Method of measuring implant profiles using scatterometric techniques
First Claim
1. A method, comprising:
- providing a semiconducting substrate;
forming a first plurality of implant regions in said substrate;
illuminating said first plurality of implant regions with a light source in a scatterometry tool, said scatterometry tool generating a trace profile corresponding to an implant profile of said illuminated implant regions; and
creating a library comprised of a plurality of calculated trace profiles of implant regions having varying implant profiles.
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Accused Products
Abstract
The present invention is directed to several inventive methods for characterizing implant profiles. In one embodiment, the method comprises forming a first plurality of implant regions in a substrate, and illuminating the implant regions with a light source in a scatterometry tool, the scatterometry tool generating a trace profile corresponding to an implant profile of the illuminated implant regions. In another embodiment, the method comprises measuring profiles of implant regions by forming a plurality of implant regions in a substrate, illuminating the implant regions, measuring light reflected off the substrate to generate a profile trace for the implant regions, comparing the generated profile trace to a target profile trace from a library, and modifying, based upon a deviation between the generated profile trace and the target profile trace, at least one parameter of an ion implant process used to form implant regions on subsequently processed substrates. In yet another embodiment, the generated profile trace is compared or correlated to at least one of a plurality of calculated profile traces stored in a library, each of which has an associated implant region profile, and modifying, based upon the comparison of the generated profile trace and the calculated profile trace, at least one parameter of an ion implant process used to form implant regions on subsequently processed substrates.
25 Citations
36 Claims
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1. A method, comprising:
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providing a semiconducting substrate; forming a first plurality of implant regions in said substrate; illuminating said first plurality of implant regions with a light source in a scatterometry tool, said scatterometry tool generating a trace profile corresponding to an implant profile of said illuminated implant regions; and creating a library comprised of a plurality of calculated trace profiles of implant regions having varying implant profiles. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of measuring profiles of implant regions formed in a semiconducting substrate, comprising:
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forming a plurality of implant regions in a semiconducting substrate; illuminating said plurality of implant regions; measuring light reflected off the substrate to generate a profile trace for said implant regions; comparing the generated profile trace to a target profile trace; and modifying, based upon a deviation between the generated profile trace and the target profile trace, at least one parameter of an ion implant process used to form implant regions on subsequently processed substrates. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A method of measuring profiles of implant regions formed in a semiconducting substrate, comprising:
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forming a plurality of implant regions in a semiconducting substrate; illuminating said plurality of implant regions; measuring light reflected off the substrate to generate a profile trace for said implant regions; comparing the generated profile trace to a calculated profile trace in a library, the calculated profile trace having an associated implant region profile; and modifying, based upon said comparison of the generated profile trace and the calculated profile trace, at least one parameter of an ion implant process used to form implant regions on subsequently processed substrates. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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23. A method of measuring profiles of implant regions formed in a semiconducting substrate, comprising:
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forming a plurality of implant regions in a semiconducting substrate; illuminating said plurality of implant regions; measuring light reflected off the substrate to generate a profile trace for said implant regions; providing a library comprised of a plurality of calculated profile traces, each of which correspond to a unique profile of an implanted region; comparing the generated profile trace to at least one of said calculated profile traces from said library; and modifying, based upon said comparison of the generated profile trace and the calculated profile trace, at least one parameter of an ion implant process used to form implant regions on subsequently processed substrates. - View Dependent Claims (24, 25, 26, 27, 28, 29)
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30. A method of measuring profiles of implant regions formed in a semiconducting substrate, comprising;
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forming a plurality of implant regions in a semiconducting substrate; illuminating said plurality of implant regions; measuring light reflected off the substrate to generate a profile trace for said implant regions; comparing the generated profile trace to a target profile trace; and modifying, based upon a deviation between the generated profile trace and the target profile trace, at least one parameter of an ion implant process used to form implant regions on subsequently processed substrates, said at least one parameter comprised of at least one of an implant energy, an implant angle, a dopant material, and a dopant material concentration. - View Dependent Claims (31, 32, 33, 34, 35, 36)
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Specification