Laser diode with metal-oxide upper cladding layer
First Claim
1. A laser diode structure comprising:
- a quantum well region;
a waveguide layer formed over the quantum well region; and
a conductive metal-oxide cladding layer formed on the waveguide layer,wherein the quantum well region comprises alternating layers of Indium-Gallium-Nitride and Gallium-Nitride, andwherein the waveguide layer comprises Gallium-Nitride doped with Magnesium (GaN;
Mg).
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Abstract
A nitride-based laser diode structure utilizing a metal-oxide (e.g., Indium-Tin-Oxide (ITO) or Zinc-Oxide (ZnO)) in place of p-doped AlGaN to form the upper cladding layer. An InGaN laser diode structure utilizes ITO upper cladding structure, with an SiO2 isolation structure formed on opposite sides of the ITO upper cladding structure to provide a lateral index step that is large enough to enable lateral single-mode operation. The lateral index step is further increased by slightly etching the GaN:Mg waveguide layer below the SiO2 isolation structure. An optional p-type current barrier layer (e.g., AlGaN:Mg having a thickness of approximately 20 nm) is formed between the InGaN-MQW region and a p-GaN upper waveguide layer to impede electron leakage from the InGaN-MQW region.
29 Citations
19 Claims
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1. A laser diode structure comprising:
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a quantum well region; a waveguide layer formed over the quantum well region; and a conductive metal-oxide cladding layer formed on the waveguide layer, wherein the quantum well region comprises alternating layers of Indium-Gallium-Nitride and Gallium-Nitride, and wherein the waveguide layer comprises Gallium-Nitride doped with Magnesium (GaN;
Mg). - View Dependent Claims (2, 3, 4, 10, 11)
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5. A laser diode structure comprising:
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a quantum well region; a waveguide layer formed over the quantum well region; and a conductive metal-oxide cladding layer formed on the waveguide layer, wherein the metal-oxide cladding layer comprises first and second side walls extending perpendicular to an upper surface of the waveguide layer, and wherein the laser diode structure further comprising an isolation layer formed on the waveguide layer and including a first portion contacting the first side wall of the metal-oxide cladding layer, and a second portion contacting the second side wall of the metal-oxide cladding layer. - View Dependent Claims (6, 7, 8, 9)
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12. A method for fabricating a laser diode structure comprising:
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forming a quantum well region; forming a waveguide layer over the quantum well region; and forming a conductive metal-oxide cladding layer on the waveguide layer, wherein forming the quantum well region comprises forming alternating layers of Indium-Gallium-Nitride and Gallium-Nitride, and wherein forming the waveguide layer comprises depositing Gallium-Nitride doped with Magnesium (GaN;
Mg). - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification