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Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability

  • US 6,991,977 B2
  • Filed: 09/18/2003
  • Issued: 01/31/2006
  • Est. Priority Date: 10/17/2001
  • Status: Expired due to Fees
First Claim
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1. A method for forming a semiconductor device, the method comprising:

  • providing a semiconductor substrate having a first region of a first conductivity type;

    forming a second region of a second conductivity type in the semiconductor substrate such that the first and second regions form a p-n junction; and

    forming first and second charge control electrodes adjacent to but insulated from one of the first and second regions, along a dimension parallel to flow of current through the semiconductor device, wherein the first charge control electrode is adapted to be biased differently than the second charge control electrode.

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