Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films

• US 6,992,317 B2
• Filed: 03/22/2004
• Issued: 01/31/2006
• Est. Priority Date: 04/11/2000
• Status: Expired due to Fees

• Current Assignee: University of Connecticut (State of Connecticut)
• Original Assignee: University of Connecticut (State of Connecticut)
• Inventors: Jain, Faquir C., Papadimitrakopoulos, Fotios
• Primary Examiner(s): Le, Thao P.
• Application Number:
  US10/805,070
• Publication Number:
  US 20050006656A1
• Time in Patent Office: 680 Days
• Field of Search: None
• US Class Current: 257/14
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C09K 11/025 non-luminescent particle coatings or suspension media
• CPC Class Codes: C09K 11/0883 Arsenides; Nitrides; Phosphides
• CPC Class Codes: C09K 11/64 containing aluminium
• CPC Class Codes: C09K 11/883 with zinc or cadmium
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H05B 33/14 characterised by the chemical or physical composition or the arrangement of the electroluminescent material , or by the simultaneous addition of the electroluminescent material in or onto the light source
• CPC Class Codes: Y10S 428/917 Electroluminescent
• CPC Class Codes: Y10S 977/952 Display

Abstract

This invention discloses novel device structures for full color flat panel displays utilizing pseudomorphically cladded quantum dot nanocrystals. Different colors are obtained by changing the core size and composition of the quantum dots while maintaining a nearly defect-free lattice at the core-cladding interface. Light emission from the quantum dot core is obtained either by injection or by avalanche electroluminescence. A nanotip emitter device is also presented. These generic devices can be addressed using a variety of conventional display drivers, including active and passive matrix configurations.

Claims

1. A p-n junction electroluminescent (EL) device, comprising successive multiple layers of:

a semiconductor-on-insulator substrate;

a first p-type Si layer grown on said substrate, part of said Si layer being patterned to produce electrically isolated Si electrodes at the bottom of said device;

a thin layer of Si thinner than the substrate which allows further epitaxial growth;

a second p-type semiconductor layer grown epitaxially, said second layer having an energy gap larger than both said first Si layer and a pseudomorphic cladding of the quantum dot nanocrystal (CNCs) layer;

a layer comprising pseudomorphic cladded quantum dots nanocrystals (CNCs) with both cladding and core semiconductors having narrower energy gap than said second p-type layer for electroluminescence;

an n-type semiconductor layer thinner than the substrate, wider energy gap than the cladding and core layers of cladded quantum dot nanocrystals (CNCs) grown on said CNC layer; and

a metal layer forming a plurality of top contact electrodes deposited on the n-type wide energy gap semiconductor layer having patterned regions to confine current conduction in pixels of said EL device.

2. The EL device of claim 1, wherein the second p-type semiconductor layer over said CNC layer is undoped.

3. The EL device of claim 1, wherein said CNC layer is selected from the group of semiconductor materials consisting of Zn_xCd_1-xSe (core)-Zn_yMg_1-ySe (cladding), Zn_xCd_1-xSe (core)-Zn_zBe_1-zSe (cladding), Zn_xCd_1-xSe (core)-ZnMgSSe (cladding), In_xGa_1-xN (core)-GaN (cladding), GaN (core)-AlGaN (cladding), and ZnCdS (core)-ZnMgS (cladding), where the subscripts x, y, z represent molar fractions.

4. The EL device of claim 1, wherein said CNC layer is sandwiched between compatible wide energy gap semiconductor layers selected from the group of semiconductors consisting of Zn_aMg_1-aSe, Zn_aMg_1-aS, Zn_aMg_1-aS_bSe_1-b, ZnaBe_1-aS_bSe_1-b, AlcGa_1-cN, and AlInN, where the subscripts a, b, c represent molar fractions.

5. The EL device of claim 1, wherein said p-n junction is reverse-biased electrically to operate said device in avalanche mode.

6. The EL device of claim 1, wherein said p-n junction is forward-biased electrically to operate in injection mode.

7. The EL device of claim 1, wherein the layer comprising CNC further comprises multiple sub-layers of differing CNCs sandwiched between epitaxially grown thin film layers of undoped wide energy gap semiconductors.

8. An EL device as described in claim 2, wherein said CNC layer is replaced by a multiplicity of CNC, each sublayer with a differing core energy gap CNCs stacked to emit different colors and white light.

9. The EL device as described in claim 1, wherein said p-doped Si layer is replaced by a transparent ITO, forming the bottom electrodes.

10. The EL device as described in claim 2, wherein a multiplicity of said CNC layers are deposited to produce red, green and blue pixel elements for a display panel.

11. The EL device of claim 1, wherein the p-doped wide energy gap semiconductor layer underneath the said CNC layer is replaced by a dielectric layer.

12. The EL device of claim 1, wherein the wide energy gap semiconductor layer having n-type conductivity over the said CNC layer is replaced by a dielectric layer.

13. The electroluminescent device of claim 11, wherein the dielectric layers are selected from the group consisting of SiON, Ta₂O₅, Ba_xSr_1-xTiO₃, PLZT, Zn_xMg_1-xS, Zn_xBe_1-xS, and their combination.

14. The electroluminescent device of claim 12, wherein dielectric layers are selected from the group consisting of SiON, Ta₂O₅, Ba_xSr_1-xTiO₃, PLZT, Zn_xMg_1-xS, Zn_xBe_1-xS, and their combinations.

15. The device of claim 1, wherein the wide energy gap semiconductor layer having n-type conductivity over said CNC layer is replaced by a hole-blocking layer.

16. The electroluminescent device of claim 14, wherein the hole-blocking layer is selected from the group consisting Ta₂O₅, Zn_xMg_1-xS, Zn_xBe_1-x, and ZnMgBeSe.

17. The device of claim 1, wherein the second p-doped semiconductor layer underneath the said CNC layer is replaced by a hole-transporting organic semiconductor layer.

18. The electroluminescent of claim 17, wherein the hole-transporting layer is selected from the group consisting of PVK and CBP.

19. The electroluminescent device of claim 17, wherein the hole transporting layer is doped with an oxidative agent selected from the group of compounds such as Fe^III citrate and Fe^III oxidate.

20. The EL device as described in claim 19, wherein the oxidative agent is constructed with a thin shield around the oxidizing agent utilizing appropriate counter ions, chelating agents, surfactants and dentrimers.

21. The electroluminescent device of claim 17, wherein the CNC layer is merged with the hole-transporting layer.

22. The electroluminescent device of claim 17, wherein both hole-transporting layer and CNC layer is substituted by a viscous composite comprising of CNCs, hole-transporting organic semiconductors, oxidative agents, soluble salts and [lower than atmospheric vapor pressure] viscosity-modifying agents.

23. The electroluminescent device of claim 22, wherein viscous composite is contained within appropriate openings realized between spacers, which are made of hole transporting viscous composite.

24. The electroluminescent device of claim 23, wherein the holes in said spacers are filled with said viscous composite with distinct emission characteristics.

25. The EL device as described in claim 24, wherein the viscous composites are introduced by method selected from the group consisting of screen-printing and ink-jet printing.

26. The electroluminescent (EL) device as described in claim 1, wherein p-n junction is replaced by an n-p-n junction electroluminescent device comprising successive layers of:

a n-doped silicon layer on insulator substrate, comprising thin doped Si n/n+ regions separated by insulating regions, such as SiO₂, wherein said n+ regions are contacted to form bottom electrodes;

a thin-layer of Si allowing for further epitaxial growth;

a n⁺-type Si layer, having addressing contact electrodes;

a thin (about 10 nm) SiO₂ layer is deposited, which is deposited and patterned with a pitch of about 0.1 microns;

a p-Si layer forming nanotips;

an n-type wide energy gap layer selected from a group of semiconductors consisting of Zn_aMg_1-aSe, Zn_aMg_1-aS, Zn_aMg_1-aS_bSe_1-b, Zn_aBe_1-aS_bSe_1-b, Al_cGa_1-cN, ZnMgBeSe, AlInN stacked on the layer comprising of nanotips;

a layer comprising of cladded quantum dots;

a wide gap semiconductors layer selected from the group of semiconductors consisting of;

Zn_aMg_1-aSe, Zn_aMg_1-aS, Zn_aMg_1-aS_bSe_1-b, Zn_aBe_1-aS_bSe_1-b, Al_cGa_1-cN, ZnMgBeSe, AlInN; and

a layer forming contact electrodes, wherein aid set of electrodes are appropriately biased and addressed to create a two-dimensional display.

27. The EL device as described in claim 1, wherein the electrodes at the bottom of the device are separated by reverse biased junctions.