Light emitting device and method for manufacturing the same
First Claim
1. A light emitting device including:
- a pixel part having a light emitting element and a first thin film transistor between a first substrate and a second substrate; and
a driving circuit having a plurality of second thin film transistors,wherein the light emitting element has a first electrode, a layer containing an organic compound on the first electrode, and a second electrode on the layer containing the organic compound,wherein the first thin film transistor is coated with an interlayer insulation layer comprised of an organic insulation film and an inorganic insulation film that covers the organic insulation film;
wherein the inorganic insulation film has a curved surface along an upper end portion of the organic insulation film; and
wherein an end portion of the first electrode is coated with an insulating material having a curved surface on an upper end portion.
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Accused Products
Abstract
A light emitting element containing an organic compound has a disadvantage in that it tends to be deteriorated by various factors, so that the greatest problem thereof is to increase its reliability (make longer its life span). The present invention provides a method for manufacturing an active matrix type light emitting device and the configuration of such an active matrix type light emitting device having high reliability. In the method, a contact hole extending to a source region or a drain region is formed, and then an interlayer insulation film made of a photosensitive organic insulating material is formed on an interlayer insulation film. The interlayer insulation film has a curved surface on its upper end portion. Subsequently, an interlayer insulation film provided as a silicon nitride film having a film thickness of 20 to 50 nm is formed by a sputtering method using RF power supply.
149 Citations
36 Claims
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1. A light emitting device including:
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a pixel part having a light emitting element and a first thin film transistor between a first substrate and a second substrate; and a driving circuit having a plurality of second thin film transistors, wherein the light emitting element has a first electrode, a layer containing an organic compound on the first electrode, and a second electrode on the layer containing the organic compound, wherein the first thin film transistor is coated with an interlayer insulation layer comprised of an organic insulation film and an inorganic insulation film that covers the organic insulation film; wherein the inorganic insulation film has a curved surface along an upper end portion of the organic insulation film; and wherein an end portion of the first electrode is coated with an insulating material having a curved surface on an upper end portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A light emitting device including:
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a pixel part having a light emitting element and a first thin film transistor between a first substrate and a second substrate; and a driving circuit having a plurality of second thin film transistors, wherein the light emitting element has a first electrode, a layer containing an organic compound on the first electrode, and a second electrode on the layer containing the organic compound; wherein the first thin film transistor is coated with an interlayer insulation layer comprised of a laminate of an inorganic insulation film and an organic insulation film; wherein a step is formed in an opening portion between a side surface of the inorganic insulation film and a side surface of the organic insulation film; wherein an upper end of the organic film has a curved surface; and wherein an end portion of the first electrode is coated with an insulating material having a curved surface on an upper end portion. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A light emitting device including:
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a pixel part having a light emitting element and a first thin film transistor between a first substrate and a second substrate; and a driving circuit having a plurality of second thin film transistors, wherein the light emitting element has a first electrode, a layer containing an organic, compound on the first electrode, and a second electrode on the layer containing the organic compound, wherein the first thin film transistor is coated with an interlayer insulation layer comprised of an organic insulation film and an inorganic insulation film that covers the organic insulation film; wherein the inorganic insulation film has curved surface along an upper end portion of the organic insulation film; and wherein an end portion of the first electrode has a slant face, the slant face reflects light emitted from the layer containing the organic compound. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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28. A light emitting device including:
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a pixel part having a light emitting element and a first thin film transistor between a first substrate and a second substrate; and a driving circuit having a plurality of second thin film transistors, wherein the light emitting element has a first electrode, a layer containing an organic compound on the first electrode, and a second electrode on the layer containing the organic compound; wherein the first thin film transistor is coated with an interlayer insulation layer comprised of a laminate of an inorganic insulation film and an organic insulation film; wherein a step is formed in an opening portion between a side surface of the inorganic insulation film and a side surface of the organic insulation film; wherein an upper end of the organic film has a curved surface; and wherein an end portion of the first electrode has a slant face, the slant face reflects light emitted from the layer containing the organic compound. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36)
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Specification