Dispersion for preventing electrification antistatic film and image display device

• US 6,992,431 B2
• Filed: 09/11/2001
• Issued: 01/31/2006
• Est. Priority Date: 09/11/2000
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Tabata, Hitoshi, Ito, Takeo, Oyaizu, Tsuyoshi, Mikami, Akira
• Primary Examiner(s): Xu, Ling X.
• Application Number:
  US10/363,267
• Publication Number:
  US 20040058148A1
• Time in Patent Office: 1,603 Days
• Field of Search: 428/328, 428/331, 428/405, 428/689, 428697-702, 313/478, 313479-480, 313/439, 313/493, 313/495, 313/498, 313/422, 313/512, 106/286.4, 106/286.5, 106/286.2, 106/287.19, 106/287.34, 106/436, 106/438, 106441-442, 106/450, 106/455, 106/481, 106/286.8, 106/287.17
• US Class Current: 313/478
• CPC Class Codes: C08K 3/22 of metals
• CPC Class Codes: C09D 7/61 inorganic
• CPC Class Codes: C09D 7/67 Particle size smaller than 100 nm
• CPC Class Codes: C09K 3/16 Anti-static materials
• CPC Class Codes: H01B 1/08 oxides
• CPC Class Codes: H01J 2229/8635 Antistatic shielding
• CPC Class Codes: H01J 29/868 Screens covering the input or output face of the vessel, e.g. transparent anti-static coatings, X-ray absorbing layers
• CPC Class Codes: Y10T 428/256 Heavy metal or aluminum or compound thereof
• CPC Class Codes: Y10T 428/259 Silicic material
• CPC Class Codes: Y10T 428/2995 Silane, siloxane or silicone coating

Abstract

An image display device having a vacuum envelope which has a light transmissible panel, a funnel and a neck, its inside held vacuum, a phosphor layer is formed on the inside surface of the light transmissible panel, an electron gun is disposed within the neck. An antistatic film which contains high-resistance fine particles having a specific resistivity of 10⁶ to 10⁹ Ω·cm is formed on inside wall of the neck. The image display device is free from deterioration of display characteristics caused by a change of the track of electrons emitted by the application of voltage, a spark in a tube, or a leakage current.

Claims

1. An image display device, comprising a vacuum envelope which has a light emission-side substrate and an electron emission-side substrate disposed in parallel to face each other with a prescribed space between the light emission-side substrate and the electron emission-side substrate, the light emission-side substrate having a light transmissible panel and a phosphor layer formed on the inside surface of the light transmissible panel, the electron emission-side substrate having a plurality of electron emission elements, wherein an antistatic film comprising high-resistance fine particles having a specific resistivity of 10⁶ to 10⁹ Ω

·

cm is formed on at least a part of the inner surface of the vacuum envelope, and wherein said image display device is a field emission display (FED).

2. The image display device as set forth in claim 1, wherein the high-resistance fine particle of antimony pentoxide (Sb₂O₅) having a pyrochlore crystal structure.

3. The image display device as set forth in claim 1, wherein the high-resistance fine particle comprises a core layer which comprises of at least one semiconducting substance selected from SnO₂, In₂O₃, Sb₂O₅ and ZnO₂ and a covering layer which is formed on the core layer and comprises at least one insulating substance selected from SiO₂, TiO₂, Al₂O₃, and ZrO₂.

4. The image display device as set forth in claim 1, wherein the high-resistance fine particle has a particle diameter of 5 to 100 nm.

5. The image display device as set forth in claim 1, wherein the antistatic film has a thickness of 50 to 1000 nm.

6. An image display device, comprising a vacuum envelope which has a light emission-side substrate and an electron emission-side substrate disposed in parallel to face each other with a prescribed space between them, and a spacer having an insulating member which is disposed between the light emission-side substrate and the electron emission-side substrate, the light emission-side substrate having a light transmissible panel and a phosphor layer formed on the inside surface of the light transmissible panel, the electronic emission-side substrate having a plurality of electron emission elements, wherein an antistatic film comprising high-resistance fine particles having a specific resistivity of 10⁶ to 10⁹ Ω

·

cm is formed on the surface of the insulating member of the spacer, and wherein said image display device is a field emission display (FED).

7. The image display device as set forth in claim 6, wherein the high-resistance fine particle of antimony pentoxide (Sb₂O₅) having a pyrochlore crystal structure.

8. The image display device as set forth in claim 6, wherein the high-resistance fine particle comprises a core layer which comprises of at least one semiconducting substance selected from SnO₂, In₂O₃, Sb₂O₅ and ZnO₂ and a covering layer which is formed on the core layer and comprises at least one insulating substance selected from SiO₂, TiO₂, Al₂O₃, and ZrO₂.

9. The image display device as set forth in claim 6, wherein the high-resistance fine particle has a particle diameter of 5 to 100 nm.

10. The image display device as set forth in claim 6, wherein the antistatic film has a thickness of 50 to 1000 nm.

11. The image display device as set forth in claim 6, wherein the antistatic film is formed to cover 20% or more of the surface area of the insulating member of the spacer.