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Light emitting device and manufacturing method thereof

  • US 6,995,400 B2
  • Filed: 09/26/2003
  • Issued: 02/07/2006
  • Est. Priority Date: 09/30/2002
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a light emitting element which includes a transparent substrate and a stack of GaN-based compound semiconductor layers formed on a first surface of the transparent substrate; and

    one of a lead frame and a printed circuit board on which said light emitting element is mounted so that said transparent substrate is located on a side of said stack of GaN-based compound semiconductor layers opposite to the one of the lead frame and the printed circuit board;

    wherein a second surface of the transparent substrate opposite to said first surface consists of at least one of a quadrangular pyramidal surface, an inverted quadrangular pyramidal surface, a conical surface, an inverted conical surface, a hemispherical surface, an inverted hemispherical surface, a paraboloidal surface, an inverted paraboloidal surface, an obliquely truncated surface having no surface parallel to the first surface, an inverted obliquely truncated surface having no surface parallel to the first surface, a multifaceted obliquely truncated surface having no surface parallel to the first surface, and an inverted multifaceted obliquely truncated surface having no surface parallel to the first surface.

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