Light emitting device and manufacturing method thereof

• US 6,995,400 B2
• Filed: 09/26/2003
• Issued: 02/07/2006
• Est. Priority Date: 09/30/2002
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Mizuyoshi, Akira
• Primary Examiner(s): Le, Thao P.
• Application Number:
  US10/670,740
• Publication Number:
  US 20040061120A1
• Time in Patent Office: 865 Days
• Field of Search: 257/79
• US Class Current: 257/79
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05023 the whole internal layer protruding from the surface
• CPC Class Codes: H01L 2224/0508 being stacked
• CPC Class Codes: H01L 2224/05099 Material
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/06102 the bonding areas being at different heights
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/1703 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

In a light emitting device, a light emitting element which includes a transparent substrate and a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate is mounted on a lead frame or a printed circuit board so that the transparent substrate is located on the side of the stack of GaN-based compound semiconductor layers opposite to the lead frame or the printed circuit board. The second surface of the transparent substrate opposite to the first surface contains a portion inclined with respect to the first surface. Alternatively, an optical member is arranged in contact with the second surface of the transparent substrate, where a surface of the optical member located on the opposite side to the transparent substrate contains a portion inclined with respect to the first surface of the transparent substrate.

Claims

1. A light emitting device comprising:

a light emitting element which includes a transparent substrate and a stack of GaN-based compound semiconductor layers formed on a first surface of the transparent substrate; and

one of a lead frame and a printed circuit board on which said light emitting element is mounted so that said transparent substrate is located on a side of said stack of GaN-based compound semiconductor layers opposite to the one of the lead frame and the printed circuit board;

wherein a second surface of the transparent substrate opposite to said first surface consists of at least one of a quadrangular pyramidal surface, an inverted quadrangular pyramidal surface, a conical surface, an inverted conical surface, a hemispherical surface, an inverted hemispherical surface, a paraboloidal surface, an inverted paraboloidal surface, an obliquely truncated surface having no surface parallel to the first surface, an inverted obliquely truncated surface having no surface parallel to the first surface, a multifaceted obliquely truncated surface having no surface parallel to the first surface, and an inverted multifaceted obliquely truncated surface having no surface parallel to the first surface.

2. A light emitting device comprising:

a light emitting element which includes a transparent substrate and a stack of GaN-based compound semiconductor layers formed on a first surface of the transparent substrate;

an optical member which is arranged in contact with a second surface of the transparent substrate opposite to said first surface, wherein said optical member consists of at least one of a quadrangular pyramidal surface, an inverted quadrangular pyramidal surface, a conical surface, an inverted conical surface, a hemispherical surface, an inverted hemispherical surface, a paraboloidal surface, an inverted paraboloidal surface, an obliquely truncated surface having no surface parallel to the first surface, an inverted obliquely truncated surface having no surface parallel to the first surface, a multifaceted obliquely truncated surface having no surface parallel to the first surface, and an inverted multifaceted obliquely truncated surface having no surface parallel to the first surface; and

one of a lead frame and a printed circuit board on which said light emitting element is mounted so that the transparent substrate is located on a side of the stack of GaN-based compound semiconductor layers opposite to the one of the lead frame and the printed circuit board.

3. A light emitting device according to claim 2, wherein said optical member has a function of a sealing package which seals said light emitting element.

4. A light emitting device comprising:

one of a lead frame and a printed circuit board; and

a light emitting element, the light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface, and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board;

wherein the second surface of the transparent substrate comprises a quadrangular pyramidal surface or an inverted quadrangular pyramidal surface.

5. A light emitting device comprising:

one of a lead frame and a printed circuit board; and

a light emitting element, the light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface, and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board;

wherein the second surface of the transparent substrate comprises a conical surface or an inverted conical surface.

6. A light emitting device comprising:

one of a lead frame and a printed circuit board; and

a light emitting element, the light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface, and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board;

wherein the second surface of the transparent substrate comprises a hemispherical surface or an inverted hemispherical surface.

7. A light emitting device comprising:

one of a lead frame and a printed circuit board; and

a light emitting element, the light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface, and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board;

wherein the second surface of the transparent substrate comprises a paraboloidal surface or an inverted paraboloidal surface.

8. A light emitting device comprising:

one of a lead frame and a printed circuit board; and

a light emitting element, the light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface, and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board;

wherein the second surface of the transparent substrate consists of at least one of an obliquely truncated surface, an inverted obliquely truncated surface, a multifaceted obliquely truncated surface, and an inverted multifaceted obliquely truncated surface, and wherein the second surface does not include any surface parallel to the first surface.

9. A light emitting device comprising:

one of a lead frame and a printed circuit board;

a light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board; and

an optical member arranged in contact with the second surface of the transparent substrate, wherein said optical member comprises a quadrangular pyramidal surface or an inverted quadrangular pyramidal surface.

10. A light emitting device comprising:

one of a lead frame and a printed circuit board;

a light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board; and

an optical member arranged in contact with the second surface of the transparent substrate, wherein said optical member comprises a conical surface or an inverted conical surface.

11. A light emitting device comprising:

one of a lead frame and a printed circuit board;

a light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board; and

an optical member arranged in contact with the second surface of the transparent substrate, wherein said optical member comprises a hemispherical surface or an inverted hemispherical surface.

12. A light emitting device comprising:

one of a lead frame and a printed circuit board;

a light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board; and

an optical member arranged in contact with the second surface of the transparent substrate, wherein said optical member comprises a paraboloidal surface or an inverted paraboloidal surface.

13. A light emitting device comprising:

one of a lead frame and a printed circuit board;

a light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board; and

an optical member having a first surface arranged in contact with the second surface of the transparent substrate, and a second surface opposite to the first surface, wherein the second surface of said optical member consists of at least one of an obliquely truncated surface, an inverted obliquely truncated surface, a multifaceted obliquely truncated surface, and an inverted multifaceted obliquely truncated surface, and wherein the second surface of the optical member does not include any surface parallel to the first surface of the transparent substrate.

14. A light emitting device, comprising:

one of a lead frame and a printed circuit board; and

a light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board;

wherein the second surface of the transparent substrate consists of one or more of a plurality of quadrangular pyramids, a plurality of inverted quadrangular pyramids, a plurality of conical shapes, a plurality of inverted conical shapes, a plurality of hemispherical shapes, a plurality of inverted hemispherical shapes, a plurality of paraboloidal shapes, a plurality of inverted paraboloidal shapes, a plurality of obliquely truncated shapes, a plurality of inverted obliquely truncated shapes, a plurality of multifaceted obliquely truncated shapes, and a plurality of inverted multifaceted obliquely truncated shapes.

15. A light emitting device, comprising:

one of a lead frame and a printed circuit board;

a light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board; and

an optical member arranged in contact with the second surface of the transparent substrate, wherein said optical member consists of one or more of a plurality of quadrangular pyramids, a plurality of inverted quadrangular pyramids, a plurality of conical shapes, a plurality of inverted conical shapes, a plurality of hemispherical shapes, a plurality of inverted hemispherical shapes, a plurality of paraboloidal shapes, a plurality of inverted paraboloidal shapes, a plurality of obliquely truncated shapes, a plurality of inverted obliquely truncated shapes, a plurality of multifaceted obliquely truncated shapes, and a plurality of inverted multifaceted obliquely truncated shapes.

16. A light emitting device, comprising:

one of a lead frame and a printed circuit board; and

a light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board;

wherein the second surface of the transparent substrate has no surface parallel to the first surface.

17. A light emitting device, comprising:

one of a lead frame and a printed circuit board;

a light emitting element comprising;

a transparent substrate having a first surface and a second surface opposite to the first surface and

a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate, wherein the stack of GaN-based semiconductor layers are mounted on the lead frame or circuit board; and

an optical member having a first surface arranged in contact with the second surface of the transparent substrate, and a second surface, opposite to the first surface, wherein the second surface of said optical member has no surface parallel to the first surface of the transparent substrate.