Semiconductor device and method of fabricating the same

• US 6,995,434 B2
• Filed: 09/29/2003
• Issued: 02/07/2006
• Est. Priority Date: 09/30/2002
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Usui, Ryosuke, Sasada, Kazuhiro
• Primary Examiner(s): Pham, Long
• Application Number:
  US10/671,458
• Publication Number:
  US 20040150048A1
• Time in Patent Office: 862 Days
• Field of Search: 257/368, 257/386, 257/407
• US Class Current: 257/368
• CPC Class Codes: H01L 21/28052 the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer formed by metal ion implantation H01L21/28044
• CPC Class Codes: H01L 21/28114 characterised by the sectional shape, e.g. T, inverted-T
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/4925 with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with only a vertical doping structure or vertical doping variation H01L29/4916
• CPC Class Codes: H01L 29/4933 with a silicide layer contacting the silicon layer, e.g. Polycide gate with a barrier layer between the silicide and silicon layers H01L29/4941
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518

Abstract

A semiconductor device capable of suppressing increase of the capacitance while suppressing a thin-line effect of a silicide film is obtained. This semiconductor device comprises a first silicon layer formed on a semiconductor substrate through a gate insulator film with an upper portion and a lower portion larger in width than a central portion for serving as a gate electrode and a first silicide film formed on the first silicon layer for serving as the gate electrode.

Claims

1. A semiconductor device comprising:

a first silicon layer formed on a semiconductor substrate through a gate insulator film with an upper portion and a lower portion larger in width than a central portion for serving as a gate electrode; and

a first silicide film formed on said first silicon layer for serving as said gate electrode, wherein

said first silicon layer serving as said gate electrode includes said upper portion having a reverse mesa shape and said lower portion having a forward mesa shape.

2. The semiconductor device according to claim 1, wherein

said first silicon layer includes a lower layer consisting of a polysilicon layer and an upper layer consisting of an amorphous silicon layer.

3. The semiconductor device according to claim 1, wherein

the width of said lower portion of said first silicon layer is smaller than the width of said upper portion of said first silicon layer.

4. The semiconductor device according to claim 1, further comprising:

a second silicon layer formed at a prescribed interval from said gate electrode with an upper portion and a lower portion larger in width than a central portion for serving as a wire, and

a second silicide film formed on said second silicon layer for serving as said wire.

5. The semiconductor device according to claim 4, wherein

said first silicon layer and said second silicon layer consist of the same silicon layer.

6. The semiconductor device according to claim 4, wherein

said second silicon layer includes a lower layer consisting of a polysilicon layer and an upper layer consisting of an amorphous silicon layer.

7. The semiconductor device according to claim 4, wherein

the width of said lower portion of said second silicon layer is smaller than the width of said upper portion of said second silicon layer.

8. The semiconductor device according to claim 1, further comprising:

a second silicon layer formed at a prescribed interval from said gate electrode with an upper portion and a lower potion larger in width than a central portion for serving as a gate electrode, and

a second silicide film formed on said second silicon layer for serving as said gate electrode.

9. The semiconductor device according to claim 8, wherein

said first silicon layer and said second silicon layer consist of the same silicon layer.

10. A semiconductor device comprising:

a semiconductor substrate;

a gate electrode, consisting of a single metal layer, formed on said semiconductor substrate through a gate insulator film with an upper potion and a lower portion larger in width than a central portion, wherein

the gate electrode, consisting of a single metal layer, includes an upper portion having a reverse mesa shape and a lower portion having a forward mesa shape.

11. A semiconductor device comprising:

a first conductive layer formed on a semiconductor substrate with an upper potion and a lower portion larger in width than a central portion; and

a second conductive layer formed on said semiconductor substrate at a prescribed interval from said first conductive layer with an upper potion and a lower portion larger in width than a central portion, wherein

the first conductive layer includes an upper portion having a reverse mesa shape and a lower portion having a forward mesa shape.

12. The semiconductor device according to claim 11, wherein

said first conductive layer and said second conductive layer include:

a silicon layer with an upper potion and a lower portion larger in width than a central portion, and

a silicide film formed on said silicon layer.

13. A semiconductor device comprising:

a first silicon layer formed on a semiconductor substrate through a gate insulator film with an upper portion and a lower portion larger in width than a central portion for serving as a gate electrode; and

a first silicide film formed on said first silicon layer for serving as said gate electrode, wherein

the width of said lower portion of said first silicon layer is smaller than the width of said upper portion of said first silicon layer.

14. A semiconductor device comprising:

a first silicon layer formed on a semiconductor substrate through a gate insulator film with an upper portion and a lower portion larger in width than a central portion for serving as a gate electrode;

a first silicide film formed on said first silicon layer for serving as said gate electrode;

a second silicon layer formed at a prescribed interval from said gate electrode with an upper portion and a lower portion larger in width than a central portion for serving as a wire; and

a second silicide film formed on said second silicon layer for serving as said wire.

15. The semiconductor device according to claim 14, wherein

said first silicon layer and said second silicon layer consist of the same silicon layer.

16. The semiconductor device according to claim 14, wherein

said second silicon layer includes a lower layer consisting of a polysilicon layer and an upper layer consisting of an amorphous silicon layer.

17. The semiconductor device according to claim 14, wherein the width of said lower portion of said second silicon layer is smaller than the width of said upper portion of said second silicon layer.