High-performance CMOS SOI devices on hybrid crystal-oriented substrates

• US 6,995,456 B2
• Filed: 03/12/2004
• Issued: 02/07/2006
• Est. Priority Date: 03/12/2004
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Nowak, Edward J.
• Primary Examiner(s): Hu, Shouxiang
• Application Number:
  US10/708,586
• Publication Number:
  US 20050199984A1
• Time in Patent Office: 697 Days
• Field of Search: 257627-628, 257327-328, 257 18- 19, 257/527
• US Class Current: 257/627
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Disclosed is an integrated circuit structure that has a substrate having at least two types of crystalline orientations. The first-type transistors are on first portions of the substrate that have a first type of crystalline orientation and second-type transistors are on second portions of the substrate that have a second type of crystalline orientation. The straining layer is above the first-type transistors and the second-type transistors. Further, the straining layer can be strained above the first-type transistors and relaxed above the second-type transistors.

Claims

1. An integrated circuit structure comprising:

a substrate having at least two types of crystalline orientations;

first-type transistors formed on first portions of said substrate having a first type of crystalline orientation;

second-type transistors formed on second portions of said substrate having a second type of crystalline orientation different from the first type of crystalline orientation; and

a straining layer above said first-type transistors and said second-type transistors,

wherein said first portions of said substrate comprise a first layer at a top of said first portions, said first layer having said first type of crystalline orientation and a second layer at a bottom of said first portions, said second layer having said second type of crystalline orientation, and

wherein said second portions of said substrate comprise said second layer at a bottom of said second portions and a third layer at a top of said second portions, said third layer having said second type of crystalline orientation and said third layer contacting said second layer;

wherein said first-type transistors and said second-type transistors include silicide regions and said straining layer is above said silicide regions; and

,

wherein said integrated circuit structure further comprises an insulator layer separating said first layer from said second layer.

2. The structure in claim 1, wherein each of said first-type transistors and said second-type transistors include source and drain regions formed within said substrate and a gate conductor formed over said substrate between said source and drain regions, and

wherein said silicide regions are formed over said gate conductor and said source and drain regions.

3. The structure in claim 1, wherein said first-type transistors are complementary to said second-type transistors.

4. The structure in claim 1, wherein said second portions of said substrate comprise non-floating substrate portions and said first portions of said substrate comprise floating substrate portions.

5. The structure in claim 1, wherein said first-type transistors and said second-type transistors comprise one of planar complementary metal oxide semiconductor (CMOS) transistors and fin-type field effect transistors (FinFETs).

6. An integrated circuit structure comprising:

a substrate having at least two types of crystalline orientations;

N-type field effect transistors (NFETs) formed on first portions of said substrate having a first type of crystalline orientation;

P-type field effect transistors (PFETs) formed on second portions of said substrate having a second type of crystalline orientation different from the first type of crystalline orientation; and

a straining layer above said NFETs and said PFETs,

wherein one of said first portions and said second portions of said substrate comprise a first layer at a top, said first layer having said first type of crystalline orientation and a second layer at a bottom, said second layer having said second type of crystalline orientation, and

wherein the other of said first portions and said second portions of said substrate comprise said second layer at a bottom and a third layer at a top, said third layer having said second type of crystalline orientation and said third layer contacting said second layer;

wherein said NFETs and said PFETs include silicide regions and said straining layer is above said silicide regions; and

,

wherein said integrated circuit structure further comprises an insulator layer separating said first layer from said second layer.

7. The structure in claim 6, wherein each of said NFETs and said PFETs include source and drain regions formed within said substrate and a gate conductor formed over said substrate between said source and drain regions, and

wherein said silicide regions are formed over said gate conductor and said source and drain regions.

8. The structure in claim 6, wherein said NFETs are complementary to said PFETs.

9. The structure in claim 6, wherein one of said first portions and said second portions of said substrate comprise non-floating substrate portions and the other of said first portions and said second portions of said substrate comprise floating substrate portions.

10. The structure in claim 6, wherein said NFETs and said PFETs comprise one of planar complementary metal oxide semiconductor (CMOS) transistors and fin-type field effect transistors (FinFETs).