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Multilevel copper interconnects with low-k dielectrics and air gaps

  • US 6,995,470 B2
  • Filed: 02/25/2004
  • Issued: 02/07/2006
  • Est. Priority Date: 05/31/2000
  • Status: Expired due to Fees
First Claim
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1. A multilevel wiring interconnect in an integrated circuit, comprising:

  • a number of multilayer metal lines connecting to a number of silicon devices in a substrate;

    a low dielectric constant insulator in a number of interstices between the number of multilayer metal lines and the substrate;

    wherein the low dielectric constant insulator includes a number of air gaps in the low dielectric constant material; and

    wherein the low dielectric constant insulator includes a film in which of a set of methyl groups and a fluorine group of atoms are as much as 43% and 9% respectively of that for a content of silicon atoms in the film.

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