Method and system for monitoring and profiling an integrated circuit die temperature

• US 6,996,491 B2
• Filed: 02/19/2002
• Issued: 02/07/2006
• Est. Priority Date: 02/19/2002
• Status: Active Grant

• Current Assignee: Oracle America, Inc. (Oracle Corporation)
• Original Assignee: Sun Microsystems Incorporated (Oracle Corporation)
• Inventors: Gold, Spencer M., Boyle, Steven R., House, Kenneth A., Gauthier, Claude R., Siegel, Joseph
• Primary Examiner(s): Nghiem, Michael
• Assistant Examiner(s): Sun, Xiuqin
• Application Number:
  US10/079,476
• Publication Number:
  US 20030158697A1
• Time in Patent Office: 1,449 Days
• Field of Search: 702/132, 702/130, 374/178, 713/300, 716/4, 347/57, 347/58, 347/17, 257/467, 714/23, 341/155
• US Class Current: 702/132
• CPC Class Codes: G06F 1/206 comprising thermal management

Abstract

A system and method are provided for sensing a physical stimulus of an integrated circuit. The system and method operate with one or more active thermal sensors embedded in the die of an integrated circuit to provide highly accurate die temperature measurements. The system and method are able to monitor and control the die temperature of the integrated circuit to avoid an integrated circuit malfunction due to an undesirable temperature condition.

Claims

1. A system to monitor a temperature of an integrated circuit, comprising:

an active thermal sensor located on a die of said integrated circuit to measure said temperature of said integrated circuit and assert a value representative of one of an over-temperature condition, an under-temperature condition, and a temperature condition between said over-temperature condition and said under-temperature condition; and

a controller located on the die of said integrated circuit and coupled to said active thermal sensor to interpret said value asserted by said active thermal sensor to monitor said temperature of said integrated circuit, the controller having an interface to a microprocessor for communication with said microprocessor to control the temperature of said integrated circuit.

2. The system of claim 1, further comprising an active calibration sensor that operates in a manner independent of said thermal sensor to perform a calibration temperature measurement of said active calibration sensor and by inference the thermal sensor, wherein said calibration temperature measurement is a baseline calibration of the active calibration sensor in a state where power is applied to only the active calibration sensor either before or after packaging of the integrated circuit.

3. The system of claim 2, wherein integrated circuit includes a substrate and wherein said active calibration sensor is built onto said substrate of said integrated circuit.

4. The system of claim 1, farther comprising a passive thermal sensor to measure said temperature of said integrated circuit and assert a voltage value representative of said temperature of said integrated circuit.

5. The system of claim 4, wherein said passive thermal sensor comprises a diode that provides an analog indication of the temperature of the integrated circuit.

6. The system of claim 5, wherein the analog indication is linearized in a digital manner to provide a linear voltage temperature relationship for the diode.

7. The system of claim 1, wherein said thermal sensor and said controller communicate in a digital manner to measure said temperature of said integrated circuit.

8. The system of claim 1, wherein the controller comprises,

a first memory structure to hold said value asserted by said thermal sensor;

and

a second memory structure to hold a value that indicates to the controller a response which enables control of the temperature of the integrated circuit.

9. The system of claim 1, wherein said temperature indicates a die temperature of said integrated circuit.

10. The system of claim 1, wherein said controller is coupled to a plurality of thermal sensors to interpret said value asserted by each of said plurality of thermal sensors to monitor and control said temperature of said integrated circuit.

11. The system of claim 1, wherein said integrated circuit includes a substrate and wherein said thermal sensor is built onto said substrate of said integrated circuit.

12. The system of claim 1, wherein said integrated circuit comprises a microprocessor.

13. The system of claim 1, wherein said thermal sensor comprises an active integrated thermal sensor.

14. A method for monitoring a die temperature of an integrated circuit, said method comprising the steps of:

sensing said die temperature of said integrated circuit with an active thermal sensor at a die location of the integrated circuit;

asserting from said active thermal sensor a value representative of said die temperature at the die location of said active thermal sensor;

determining if said value from said active thermal sensor exceeds a threshold value for said active thermal sensor to detect an undesirable temperature condition of said integrated circuit; and

determining said threshold value with a calibration thermal sensor that operates independently of said active thermal sensor when said integrated circuit is not clocked.

15. The method of claim 14, further comprising the steps of,

accessing a memory structure if said value representative of said die temperature from the active thermal sensor exceeds said threshold value for the active thermal sensor to determine a response to said undesirable temperature condition;

and

executing the response to control said undesirable temperature condition as determined by the content of said memory structure.

16. The method of claim 15, further comprising the step of:

determining if said value representative of said die temperature exceeds said threshold value for said active thermal sensor for a plurality of sensing cycles before said reading of said memory structure to determine said response to control said undesirable temperature condition.

17. The method of claim 15, further comprising the step of,

determining if said value representative of said die temperature falls below said threshold value for said active thermal sensor for a plurality of sensing cycles before said reading of said memory structure to determine said response to control said undesirable temperature condition.

18. The method of claim 14, further comprising the steps of:

accessing a memory structure if said value representative of said die temperature from the active thermal sensor falls below said threshold value for the active thermal sensor to determine a response to said undesirable temperature condition; and

executing the response to control said undesirable temperature condition as determined by the content of said memory structure.

19. The method of claim 14, wherein said thermal sensor is embedded in said integrated circuit.

20. The method of claim 14, further comprising the step of, determining said threshold value with a calibration thermal sensor that operates independently of said active thermal sensor when said integrated circuit is in a powered down state.

21. The method of claim 20, wherein said threshold value represents said die temperature of said integrated circuit in said powered down state as determined by said calibration thermal sensor.

22. The method of claim 14, wherein said threshold value represents said die temperature of said integrated circuit when said integrated circuit is not clocked as determined by said calibration thermal sensor.

23. The method of claim 14, wherein said threshold value is determined for said active thermal sensor based on a location of said thermal sensor in said integrated circuit.

24. The method of claim 14, wherein a processor coupled to said thermal sensor performs said step of determining if said value from said active thermal sensor exceeds a threshold value for said active thermal sensor to detect the undesirable temperature condition of said integrated circuit wherein the undesirable temperature condition comprises one of an over-temperature condition and an under-temperature condition.

25. The method of claim 14, wherein said thermal sensor comprises an active integrated thermal sensor.

26. A temperature management system for an integrated circuit, comprising:

one or more thermal sensors to sense and report one or more temperature measurements from one or more locations located across a die area of the integrated circuit;

a control unit to determine from a reported temperature measurement one of at least three thermal states of the integrated circuit, and to manage the temperature of the integrated circuit if the control unit detects a temperature event from the one or more thermal sensors; and

a calibration thermal sensor that operates independently of the one or more thermal sensors to provide one or more temperature calibration values of the one or more thermal sensors, wherein the one or more temperature calibration values are for use in determination of the temperature event for each of the reported one or more temperature measurements from the one or more thermal sensors.

27. The temperature management system of claim 26, wherein the one or more thermal sensors are active thermal sensors embedded in the die of the integrated circuit.

28. The temperature management system of claim 26, wherein if the control unit detects said temperature event, the control unit determines a response to manage the temperature of the integrated circuit from a data value read from a memory structure.

29. The temperature management system of claim 26, wherein at least three thermal states comprise, an over-temperature state, an under-temperature state, and an operational state in which the control unit determines that the one or more temperature measurements are within a selected range.