Method for manufacturing a silicon sensor and a silicon sensor
First Claim
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1. A method for manufacturing a silicon sensor structure, the method comprising the steps of:
- forming by etched openings into a single crystal silicon wafer at least one spring element configuration and at least one seismic mass (8) connected to said spring element configuration,fabricating openings and trenches extending through a depth an entire thickness of the silicon wafer by dry etch methods, andbasing an etch process used for controlling the spring constant of the spring element configuration on anisotropic wet etch methods after said fabricating step.
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Abstract
The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.
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15 Claims
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1. A method for manufacturing a silicon sensor structure, the method comprising the steps of:
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forming by etched openings into a single crystal silicon wafer at least one spring element configuration and at least one seismic mass (8) connected to said spring element configuration, fabricating openings and trenches extending through a depth an entire thickness of the silicon wafer by dry etch methods, and basing an etch process used for controlling the spring constant of the spring element configuration on anisotropic wet etch methods after said fabricating step. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification