Method of manufacturing a semiconductor device

• US 6,998,282 B1
• Filed: 01/27/1998
• Issued: 02/14/2006
• Est. Priority Date: 02/16/1995
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Teramoto, Satoshi, Arai, Yasuyuki, Yamazaki, Shunpei
• Primary Examiner(s): Wilczewski, M.
• Application Number:
  US09/013,960
• Time in Patent Office: 2,940 Days
• Field of Search: 438/30, 438/149, 438/164, 438/166, 438/406, 438/458, 438/459, 438/928, 438/977, 438/455, 148/DIG.135, 349/45, 257/72, 257/347
• US Class Current: 438/30
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: Y10S 438/928 Front and rear surface processing
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.

Claims

1. A method of manufacturing a semiconductor device comprising:

forming a pixel thin film transistor and a pixel electrode and a drive circuit thin film transistor for driving said pixel thin film transistor over a first substrate;

transferring said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor together from said first substrate to a second substrate to provide said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor over said second substrate; and

forming a layer comprising a liquid crystal in a gap to be formed between said second substrate and a third substrate with said pixel electrode between said second substrate and said third substrate,

wherein said first substrate is removed to be separated from said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor in said transferring, and

wherein said third substrate is a resin substrate.

2. A method according to claim 1 wherein said drive circuit thin film transistor is provided in a shift register circuit.

3. A method according to claim 1 wherein said drive circuit thin film transistor is provided in an analog buffer circuit.

4. A method according to claim 1 wherein the formation of said pixel thin film transistor and said drive circuit thin film transistor is conducted at least by forming a semiconductor film comprising silicon over said first substrate and subsequently crystallizing said semiconductor film by a linear laser light.

5. A method of manufacturing a semiconductor device comprising:

forming a pixel thin film transistor and a pixel electrode and a drive circuit thin film transistor for driving said pixel thin film transistor over a first substrate;

transferring said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor together from said first substrate to a second substrate comprising a resin to provide said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor over said second substrate; and

forming a layer comprising a liquid crystal in a gap to be formed between said second substrate and a third substrate with said pixel electrode between said second substrate and said third substrate,

wherein said first substrate is removed to be separated from said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor in said transferring, and

wherein said third substrate is a resin substrate.

6. A method according to claim 5 wherein said drive circuit thin film transistor is provided in a shift register circuit.

7. A method according to claim 5 wherein said drive circuit thin film transistor is provided in an analog buffer circuit.

8. A method according to claim 5 wherein said resin comprises a polyethylene terephthalate.

9. A method according to claim 5 wherein the formation of said pixel thin film transistor and said drive circuit thin film transistor is conducted at least by forming a semiconductor film comprising silicon over said first substrate and subsequently crystallizing said semiconductor film by a linear laser light.

10. A method of manufacturing a semiconductor device comprising:

forming a pixel thin film transistor and a pixel electrode and a drive circuit thin film transistor for driving said pixel thin film transistor over a first substrate comprising a quartz;

transferring said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor together from said first substrate to a second substrate comprising a resin to provide said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor over said second substrate; and

forming a layer comprising a liquid crystal in a gap to be formed between said second substrate and a third substrate with said pixel electrode between said second substrate and said third substrate,

wherein said first substrate is removed to be separated from said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor in said transferring, and

wherein said third substrate is a resin substrate.

11. A method according to claim 10 wherein said drive circuit thin film transistor is provided in a shift register circuit.

12. A method according to claim 10 wherein said drive circuit thin film transistor is provided in an analog buffer circuit.

13. A method according to claim 10 wherein said resin comprises a polyethylene terephthalate.

14. A method according to claim 10 wherein the formation of said pixel thin film transistor and said drive circuit thin film transistor is conducted at least by forming a semiconductor film comprising silicon over said first substrate and subsequently crystallizing said semiconductor film by a linear laser light.

15. A method of manufacturing a semiconductor device comprising:

forming a pixel thin film transistor and a pixel electrode and a drive circuit thin film transistor over a first substrate comprising a glass;

transferring said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor together from said first substrate to a second substrate comprising a resin to provide said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor over said second substrate; and

forming a layer comprising a liquid crystal in a gap to be formed between said second substrate and a third substrate with said pixel electrode between said second substrate and said third substrate,

wherein said first substrate is removed to be separated from said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor in said transferring, and

wherein said third substrate is a resin substrate.

16. A method according to claim 15 wherein said drive circuit thin film transistor is provided in a shift register circuit.

17. A method according to claim 15 wherein said drive circuit thin film transistor is provided in an analog buffer circuit.

18. A method according to claim 15 wherein said resin comprises a polyethylene terephthalate.

19. A method according to claim 15 wherein the formation of said pixel thin film transistor and said drive circuit thin film transistor is conducted at least by forming a semiconductor film comprising silicon over said first substrate and subsequently crystallizing said semiconductor film by a linear laser light.

20. A method of manufacturing a semiconductor device comprising:

forming a plurality of thin film transistors and a plurality of pixel electrodes over a glass substrate; and

transferring said plurality of thin film transistors and said plurality of pixel electrodes together from said glass substrate to a first substrate comprising a resin to provide said plurality of thin film transistors and said plurality of pixel electrodes over said first substrate comprising a resin; and

forming a layer comprising a liquid crystal in a gap to be formed between said first substrate and a second substrate with said plurality of pixel electrodes between said first substrate and said second substrate,

wherein said glass substrate is removed to be separated from said plurality of thin film transistors and said plurality of pixel electrodes in said transferring, and

wherein said second substrate is a resin substrate.

21. A method according to claim 20 wherein said resin comprises a polyethylene terephthalate.

22. A method according to claim 20 wherein the formation of said plurality of thin film transistors is conducted at least by forming a semiconductor film comprising silicon over said glass substrate and subsequently crystallizing said semiconductor film by a linear laser light.

23. A method of manufacturing a semiconductor device comprising:

forming an active matrix circuit comprising a pixel electrode over a quartz substrate; and

transferring said active matrix circuit from said quartz substrate to a first substrate comprising a resin to provide said active matrix circuit over said first substrate comprising a resin; and

forming a layer comprising a liquid crystal in a gap to be formed between said first substrate and a second substrate with said pixel electrode between said first substrate and said second substrate,

wherein said quartz substrate is removed to be separated from said active matrix circuit in said transferring, and

wherein said second substrate is a resin substrate.

24. A method according to claim 23 wherein said resin comprises a polyethylene terephthalate.

25. A method of manufacturing a semiconductor device comprising:

forming an active matrix circuit comprising a pixel electrode over a glass substrate; and

transferring said active matrix circuit from said glass substrate to a first substrate comprising a resin to provide said active matrix circuit over said first substrate comprising a resin; and

forming a layer comprising a liquid crystal in a gap to be formed between said first substrate and a second substrate with said pixel electrode between said first substrate and said second substrate,

wherein said glass substrate is removed to be separated from said active matrix circuit in said transferring, and

wherein said second substrate is a resin substrate.

26. A method according to claim 25 wherein said resin comprises a polyethylene terephthalate.

27. A method of manufacturing a semiconductor device comprising:

forming a plurality of pixel electrodes over a quartz substrate;

transferring said plurality of pixel electrodes together from said quartz substrate to a first substrate comprising a resin to provide said plurality of pixel electrodes over said first substrate; and

forming a layer comprising a liquid crystal in a gap to be formed between said first substrate and a second substrate with said plurality of pixel electrodes between said first substrate and said second substrate,

wherein said quartz substrate is removed to be separated from said plurality of pixel electrodes in said transferring, and

wherein said second substrate is a resin substrate.

28. A method according to claim 27 wherein said resin of said first substrate comprises a polyethylene terephthalate.

29. A method according to claim 27 wherein said resin of said second substrate comprises a polyethylene terephthalate.

30. A method of manufacturing a semiconductor device comprising:

forming a plurality of pixel electrodes over a glass substrate;

transferring said plurality of pixel electrodes together from said glass substrate to a first substrate comprising a resin to provide said plurality of pixel electrodes over said first substrate; and

forming a layer comprising a liquid crystal in a gap to be formed between said first substrate and a second substrate with said plurality of pixel electrodes between said first substrate and said second substrate,

wherein said glass substrate is removed to be separated from said plurality of pixel electrodes in said transferring, and

wherein said second substrate is a resin substrate.

31. A method according to claim 30 wherein said resin of said first substrate comprises a polyethylene terephthalate.

32. A method according to claim 30 wherein said resin of said second substrate comprises a polyethylene terephthalate.

33. A method of manufacturing a semiconductor device comprising:

forming an active matrix circuit over a quartz substrate;

transferring said active matrix circuit from said quartz substrate to a first substrate comprising a resin to provide said active matrix circuit over said first substrate; and

forming a layer comprising a liquid crystal in a gap to be formed between said first substrate and a second substrate with said active matrix circuit between said first substrate and said second substrate,

wherein said quartz substrate is removed to be separated from said active matrix circuit in said transferring, and

wherein said second substrate is a resin substrate.

34. A method according to claim 33 wherein said resin of said first substrate comprises a polyethylene terephthalate.

35. A method according to claim 33 wherein said resin of said second substrate comprises a polyethylene terephthalate.

36. A method of manufacturing a semiconductor device comprising:

forming an active matrix circuit over a glass substrate;

transferring said active matrix circuit from said glass substrate to a first substrate comprising a resin to provide said active matrix circuit over said first substrate; and

forming a layer comprising a liquid crystal in a gap to be formed between said first substrate and a second substrate with said active matrix circuit between said first substrate and said second substrate,

wherein said glass substrate is removed to be separated from said active matrix circuit in said transferring, and

wherein said second substrate is a resin substrate.

37. A method according to claim 36 wherein said resin of said first substrate comprises a polyethylene terephthalate.

38. A method according to claim 36 wherein said resin of said second substrate comprises a polyethylene terephthalate.

39. A method of manufacturing an EL display comprising:

forming a pixel thin film transistor and a pixel electrode and a drive circuit thin film transistor for driving said pixel thin film transistor over a first substrate;

transferring said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor together from said first substrate to a second substrate to provide said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor over said second substrate; and

opposing a third substrate to said second substrate to form an EL display comprising said third substrate and said second substrate,

wherein said first substrate is removed to be separated from said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor in said transferring, and

wherein said third substrate is a resin substrate.

40. A method of manufacturing an EL display comprising:

forming a pixel thin film transistor and a pixel electrode and a drive circuit thin film transistor for driving said pixel thin film transistor over a first substrate;

transferring said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor together from said first substrate to a second substrate comprising a resin to provide said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor over said second substrate; and

opposing a third substrate to said second substrate to form an EL display comprising said third substrate and said second substrate,

wherein said first substrate is removed to be separated from said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor in said transferring, and

wherein said third substrate is a resin substrate.

41. A method of manufacturing an EL display comprising:

forming a pixel thin film transistor and a pixel electrode and a drive circuit thin film transistor over a first substrate comprising a quartz;

transferring said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor together from said first substrate to a second substrate comprising a resin to provide said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor over said second substrate; and

opposing a third substrate to said second substrate to form an EL display comprising said third substrate and said second substrate,

wherein said first substrate is removed to be separated from said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor in said transferring, and

wherein said third substrate is a resin substrate.

42. A method of manufacturing an EL display comprising:

forming a pixel thin film transistor and a pixel electrode and a drive circuit thin film transistor over a first substrate comprising a glass;

transferring said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor together from said first substrate to a second substrate comprising a resin to provide said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor over said second substrate; and

opposing a third substrate to said second substrate to form an EL display comprising said third substrate and said second substrate,

wherein said first substrate is removed to be separated from said pixel thin film transistor and said pixel electrode and said drive circuit thin film transistor in said transferring, and

wherein said third substrate is a resin substrate.

43. A method of manufacturing an EL display comprising:

forming a plurality of thin film transistors and a plurality of pixel electrodes over a glass substrate; and

transferring said plurality of thin film transistors and said plurality of pixel electrodes together from said glass substrate to a first substrate comprising a resin to provide said plurality of thin film transistors and said plurality of pixel electrodes over said first substrate comprising a resin; and

opposing a second substrate to said first substrate to form an EL display comprising said second substrate and said first substrate,

wherein said glass substrate is removed to be separated from said plurality of thin film transistors and said plurality of pixel electrodes in said transferring, and

wherein said second substrate is a resin substrate.

44. A method of manufacturing an EL display comprising:

forming an active matrix circuit comprising a pixel electrode over a quartz substrate; and

transferring said active matrix circuit from said quartz substrate to a first substrate comprising a resin to provide said active matrix circuit over said first substrate comprising a resin; and

opposing a second substrate to said first substrate to form an EL display comprising said second substrate and said first substrate,

wherein said quartz substrate is removed to be separated from said active matrix circuit in said transferring, and

wherein said second substrate is a resin substrate.

45. A method of manufacturing an EL display comprising:

forming an active matrix circuit comprising a pixel electrode over a glass substrate; and

transferring said active matrix circuit from said glass substrate to a first substrate comprising a resin to provide said active matrix circuit over said first substrate comprising a resin; and

opposing a second substrate to said first substrate to form an EL display comprising said second substrate and said first substrate,

wherein said glass substrate is removed to be separated from said active matrix circuit in said transferring, and

wherein said second substrate is a resin substrate.

46. A method of manufacturing an EL display comprising:

forming a plurality of pixel electrodes over a quartz substrate; and

transferring said plurality of pixel electrodes together from said quartz substrate to a first substrate comprising a resin to provide said plurality of pixel electrodes over said first substrate; and

opposing a second substrate to said first substrate to form an EL display comprising said second substrate and said first substrate,

wherein said quartz substrate is removed to be separated from said plurality of pixel electrodes in said transferring, and

wherein said second substrate is a resin substrate.

47. A method of manufacturing an EL display comprising:

forming a plurality of pixel electrodes over a glass substrate; and

transferring said plurality of pixel electrodes together from said glass substrate to a first substrate comprising a resin to provide said plurality of pixel electrodes over said first substrate; and

opposing a second substrate to said first substrate to form an EL display comprising said second substrate and said first substrate,

wherein said glass substrate is removed to be separated from said plurality of pixel electrodes in said transferring, and

wherein said second substrate is a resin substrate.

48. A method of manufacturing an EL display comprising:

forming an active matrix circuit over a quartz substrate; and

transferring said active matrix circuit from said quartz substrate to a first substrate comprising a resin to provide said active matrix circuit over said first substrate; and

opposing a second substrate to said first substrate to form an EL display comprising said second substrate and said first substrate,

wherein said quartz substrate is removed to be separated from said active matrix circuit in said transferring, and

wherein said second substrate is a resin substrate.

49. A method of manufacturing an EL display comprising:

forming an active matrix circuit over a glass substrate; and

transferring said active matrix circuit from said glass substrate to a first substrate comprising a resin to provide said active matrix circuit over said first substrate; and

opposing a second substrate to said first substrate to form an EL display comprising said second substrate and said fist substrate,

wherein said glass substrate is removed to be separated from said active matrix circuit in said transferring, and

wherein said second substrate is a resin substrate.