Semiconductor device and method of manufacturing thereof
First Claim
1. A method of manufacturing a semiconductor device, comprising the steps of:
- forming an island shape semiconductor film over a substrate;
forming a first insulating film on the island shape semiconductor film;
forming an island shape gate electrode and a capacitor wiring over the island shape semiconductor film with the first insulating film interposed therebetween;
forming a second insulating film covering the gate electrode and the capacitor wiring;
forming a first contact hole to reach the gate electrode by selectively etching the second insulating film;
forming a scanning line to be connected to the gate electrode on the second insulating film;
forming a third insulating film on the scanning;
forming a second contact hole to reach the semiconductor film by selectively etching the third insulating film;
forming a signal line to be electrically connected to the island shape semiconductor film;
forming a fourth insulating film over the signal line; and
forming a pixel electrode over the fourth insulation film.
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Accused Products
Abstract
To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a layer that is different from a gate electrode so that the capacitor wiring is arranged in parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of adjacent pixels can be avoided, thereby obtaining satisfactory display images.
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Citations
24 Claims
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1. A method of manufacturing a semiconductor device, comprising the steps of:
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forming an island shape semiconductor film over a substrate; forming a first insulating film on the island shape semiconductor film; forming an island shape gate electrode and a capacitor wiring over the island shape semiconductor film with the first insulating film interposed therebetween; forming a second insulating film covering the gate electrode and the capacitor wiring; forming a first contact hole to reach the gate electrode by selectively etching the second insulating film; forming a scanning line to be connected to the gate electrode on the second insulating film; forming a third insulating film on the scanning; forming a second contact hole to reach the semiconductor film by selectively etching the third insulating film; forming a signal line to be electrically connected to the island shape semiconductor film; forming a fourth insulating film over the signal line; and forming a pixel electrode over the fourth insulation film. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a semiconductor film over a substrate; forming a first insulating film on the semiconductor film; forming a first conductive film on the first insulating film; patterning said first conductive film into an island shape gate electrode and a capacitor wiring over said semiconductor film; forming a second insulating film covering the gate electrode and the capacitor wiring; forming a first contact hole to reach the gate electrode by selectively etching the second insulating film; forming a scanning line to be connected to the gate electrode on the second insulating film; forming a third insulating film on the scanning; forming a signal line to be electrically connected to the semiconductor film; forming a fourth insulating film over the signal line; and forming a pixel electrode over the fourth insulation film. - View Dependent Claims (7, 8, 9, 10)
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11. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a first insulating film on a first semiconductor region to become a channel region of a thin film transistor and a second semiconductor region to become a capacitor electrode; forming a first conductive film on the first insulating film; patterning said first conductive film into an island shape gate electrode over the first semiconductor region and a capacitor wiring over the second semiconductor region; forming a second insulating film covering the gate electrode and the capacitor wiring; forming a first contact hole to reach the gate electrode by selectively etching the second insulating film; forming a scanning line to be connected to the gate electrode on the second insulating film through said first contact hole; forming a third insulating film on the scanning; forming a signal line to be electrically connected to the semiconductor film; forming a fourth insulating film over the signal line; and forming a pixel electrode over the fourth insulation film. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a first insulating film on a first semiconductor region to become a channel region of a thin film transistor and a second semiconductor region to become a capacitor electrode; forming a first conductive film on the first insulating film; patterning said first conductive film into an island shape gate electrode over the first semiconductor region and a capacitor wiring over the second semiconductor region; forming a second insulating film covering the gate electrode and the capacitor wiring; forming a first contact hole to reach the gate electrode by selectively etching the second insulating film; forming a scanning line to be connected to the gate electrode on the second insulating film; forming a third insulating film on the scanning line; forming a signal line to be electrically connected to the semiconductor film, wherein said signal line extends in parallel with said capacitor wiring. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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Specification