Transparent double-injection field-effect transistor
First Claim
Patent Images
1. A field-effect transistor, comprising:
- a) an anode;
b) a cathode spaced apart from the anode;
c) a substantially transparent channel adapted to selectively conduct carriers between the anode and the cathode;
d) a substantially transparent gate electrode adapted for controlling current in the substantially transparent channel; and
e) a substantially transparent gate insulator,the field-effect transistor being adapted to be operable by double injection.
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Abstract
A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.
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Citations
74 Claims
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1. A field-effect transistor, comprising:
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a) an anode; b) a cathode spaced apart from the anode; c) a substantially transparent channel adapted to selectively conduct carriers between the anode and the cathode; d) a substantially transparent gate electrode adapted for controlling current in the substantially transparent channel; and e) a substantially transparent gate insulator, the field-effect transistor being adapted to be operable by double injection. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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- 13. A double-injection field-effect transistor formed entirely of substantially transparent materials.
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15. A field-effect transistor, comprising:
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a) a substantially transparent substrate; b) a substantially transparent anode and anode contact; c) a substantially transparent cathode and cathode contact, the cathode being spaced apart from the anode; d) a substantially transparent channel adapted to selectively conduct carriers between the anode and the cathode; e) a substantially transparent gate electrode adapted for controlling current in the channel; f) a substantially transparent gate insulator; and g) a substantially transparent interconnection lead electrically coupled to each of the anode, cathode, and gate, the field-effect transistor being adapted to be operable by double injection. - View Dependent Claims (16, 17, 18, 19)
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20. A field-effect transistor, comprising:
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a) an anode; b) a cathode spaced apart from the anode; c) a substantially transparent channel adapted to selectively conduct carriers between the anode and the cathode; d) first and second gate electrodes adapted for controlling current in the channel; and e) at least one substantially transparent gate insulator, the field-effect transistor being adapted to be operable by double injection. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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48. A field-effect transistor, comprising:
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a) substantially transparent anode means for injecting positive carriers and extracting negative carriers; b) substantially transparent cathode means for injecting negative carriers and extracting positive carriers; c) substantially transparent means adapted to selectively conduct carriers between the anode means and the cathode means; d) first and second means for controlling current, at least one of the first and second means for controlling current being substantially transparent; and e) at least one substantially transparent means for insulating the first and second means for controlling current from the substantially transparent means adapted to selectively conduct carriers, the field-effect transistor being adapted to be operable by double injection. - View Dependent Claims (49)
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50. A field-effect transistor, comprising:
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a) an anode; b) a cathode spaced apart from the anode; c) a substantially transparent channel adapted to selectively conduct carriers between the anode and the cathode; d) first and second gate electrodes adapted for controlling current in the channel, the first gate electrode overlapping at least a portion of the channel adjacent to the anode and the second gate electrode overlapping at least a portion of the channel adjacent to the cathode; and e) at least one substantially transparent gate insulator, the field-effect transistor being adapted to be operable by double injection. - View Dependent Claims (51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72)
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73. A field-effect transistor, comprising:
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a) an anode; b) a cathode spaced apart from the anode; c) a substantially transparent channel adapted to selectively conduct carriers between the anode and the cathode; d) first and second gate electrodes adapted for controlling current in the channel; and e) at least one substantially transparent gate insulator comprising a wide-bandgap insulator, the field-effect transistor being adapted to be operable by double injection.
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74. A field-effect transistor, comprising:
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a) an anode; b) a cathode spaced apart from the anode, only one of the anode and cathode being adapted to inject carriers into the channel; c) a substantially transparent channel adapted to selectively conduct carriers between the anode and the cathode; d) first and second gate electrodes adapted for controlling current in the channel; and e) at least one substantially transparent gate insulator, the field-effect transistor being adapted to be operable by double infection.
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Specification