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Single poly CMOS imager

  • US 6,998,657 B2
  • Filed: 10/21/2003
  • Issued: 02/14/2006
  • Est. Priority Date: 10/21/2003
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a substrate; and

    at least two non-overlapping gate structures formed in a single layer on said substrate, said gate structures being spaced apart by a gap measuring less than 1300 Angstroms, wherein at least one of the gate structures is a transistor gate structure.

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