Breakdown-resistant thin film capacitor with interdigitated structure

• US 6,999,297 B1
• Filed: 01/18/2000
• Issued: 02/14/2006
• Est. Priority Date: 01/20/1999
• Status: Expired due to Fees

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Mackens, Uwe, Klee, Mareike, Herrmann, Wilhelm, Keizer, Paulus H. M.
• Primary Examiner(s): Dinkins, Anthony
• Application Number:
  US09/483,923
• Time in Patent Office: 2,219 Days
• Field of Search: 361/303, 361/304, 361/306.1, 361/306.3, 361/309, 361311-313, 3613212-3215
• US Class Current: 361/303
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/60 Electrodes

Abstract

The invention relates to a thin film capacitor with a carrier substrate, at least two interdigitated electrodes, and a dielectric. A staggered arrangement of at least one interdigitated electrode below the dielectric with respect to an interdigitated electrode above the dielectric results in a breakdown-resistant thin film capacitor which can be manufactured in the same production process as a standard monolayer capacitor.

Claims

1. A thin film capacitor comprising a carrier substrate (1), at least two interdigitated electrodes (4, 5), and at least one dielectric (3), characterized in that at least one interdigitated electrode (4) is arranged below the dielectric (3), at least one interdigitated electrode (5) is arranged above the dielectric (3) and the interdigitated electrode (5) above the dielectric (3) is positioned in a staggered, non-overlapping, arrangement with respect to the interdigitated electrode (4) below the dielectric (3).

2. A thin film capacitor as claimed in claim 1, characterized in that the dielectric (3) comprises a plurality of layers.

3. A thin film capacitor as claimed in claim 1, characterized in that the dielectric (3) comprises a ferroelectric ceramic material.

4. A thin film capacitor as claimed in claim 1, characterized in that a barrier layer (2) is provided on the carrier substrate (1).