Developing method, substrate treating method, and substrate treating apparatus

• US 7,001,086 B2
• Filed: 10/21/2004
• Issued: 02/21/2006
• Est. Priority Date: 08/30/2002
• Status: Expired due to Term

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Yoneda, Ikuo, Itoh, Masamitsu, Sakurai, Hideaki
• Primary Examiner(s): Le, Hoa Van
• Application Number:
  US10/968,992
• Publication Number:
  US 20050079639A1
• Time in Patent Office: 488 Days
• Field of Search: 430/322, 430/325, 396/611, 396/627, 156/345.18, 156/345.21, 134/1.3, 134/21, 134/33, 134/36, 427/240, 427/425, 118/319, 118/320, 118/321, 438/745, 438/747, 438/748, 438/906, 153/001, 153/02, 153/03, 153/65
• US Class Current: 396/611
• CPC Class Codes: G03F 7/30 Imagewise removal using liquid means
• CPC Class Codes: Y10S 438/906 Cleaning of wafer as interim step

Abstract

A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Claims

1. A substrate treating method comprising:

discharging a first solution continuously to a substrate from a first solution discharge port disposed at the bottom a first solution discharge/suction unit, sucking the solution on the substrate continuously from two suction ports disposed at the bottom the first solution discharge/suction unit so as to enclose the solution discharge port, and treating the substrate surface with the first solution while moving the first solution discharge/suction unit and the substrate relatively in a horizontal linear motion; and

discharging a second solution different from the first solution continuously to the substrate from a second solution discharge port disposed at the bottom a second solution discharge/suction unit different from the first solution discharge/suction unit, sucking the solution on the substrate continuously from two suction ports disposed at the bottom the second solution discharge/suction unit so as to enclose the solution discharge port, and treating the substrate surface with the second solution while moving the second solution discharge/suction unit and the substrate relatively in a horizontal linear motion.

2. The substrate treating method according to claim 1,

wherein the first solution discharge/suction unit comprises two third and fourth solution discharge ports disposed at the bottom the first solution discharge/suction unit so as to enclose two first suction ports,

the second solution discharge/suction unit comprises two fifth and sixth solution discharge ports disposed at the bottom the second solution discharge/suction unit so as to enclose two second suction ports,

third and fourth solutions are continuously discharged to the substrate from the third and fourth solution discharge ports at the time of treatment with the first solution, and

fifth and sixth solutions are continuously discharged to the substrate from the fifth and sixth solution discharge ports at the time of treatment with the second solution.

3. The substrate treating method according to claim 1, wherein the first suction port, first solution discharge port, and first suction port are disposed in this order in the relative moving direction of the substrate and the first solution discharge/suction unit.

4. The substrate treating method according to claim 1, wherein the second suction port, second solution discharge port, and second suction port are disposed in this order in the relative moving direction of the substrate and the second solution discharge/suction unit.

5. The substrate treating method according to claim 1, wherein the first solution is ozone water and the second solution is developing solution.

6. The substrate treating method according to claim 1, wherein the ozone concentration in the ozone water is 0.2 ppm to 35 ppm.

7. The substrate treating method according to claim 2, wherein the third solution discharge port, first suction port, first solution discharge port, first suction port, and fourth solution discharge port are disposed in this order in the relative moving direction of the substrate and the first solution discharge/suction unit.

8. The substrate treating method according to claim 2, wherein the fifth solution discharge port, second suction port, second solution discharge port, second suction port, and sixth solution discharge port are disposed in this order in the relative moving direction of the substrate and the second solution discharge/suction unit.

9. The substrate treating method according to claim 2, wherein the first solution is ozone water, the second solution is developing solution, and the third to six solutions are pure water.

10. The substrate treating method according to claim 2, wherein the ozone concentration in the ozone water is 0.2 ppm to 35 ppm.