Magnetic ring unit and magnetic memory device
First Claim
Patent Images
1. A magnetic ring unit, characterized by having at least a magnetic ring in eccentric ring form wherein the center of the inner diameter is located at a decentered position relative to the center of the outer diameter.
2 Assignments
0 Petitions
Accused Products
Abstract
The present invention relates to a magnetic ring unit and a magnetic memory device; an object of the invention is to control the direction of rotation of the magnetic flux freely and with high reproducibility in a simple structure without using a thermal process such as pinning; and a magnetic ring unit is formed of a magnetic ring in eccentric ring form where the center of the inner diameter is located at a decentered position relative to the center of the outer diameter.
-
Citations
3 Claims
- 1. A magnetic ring unit, characterized by having at least a magnetic ring in eccentric ring form wherein the center of the inner diameter is located at a decentered position relative to the center of the outer diameter.
-
3. A magnetic memory device that comprises:
- magneto-resistive memory elements on a semiconductor substrate, which are respectively placed in intersection regions of word lines and bit lines placed in the directions crossing each other and where first magnetic layers of which the direction of rotation of magnetization is variable and second magnetic layers of which the direction of rotation of magnetization is fixed are layered via non-magnetic intermediate layers; and
access transistors of which the gates are sense lines placed in the direction that crosses said bit lines, wherein the magnetic memory device is characterized in that each of said magneto-resistive memory element is formed at least of;
a first magnetic ring in eccentric ring form where the center of the inner diameter is located at a decentered position relative to the center of the outer diameter;
a second magnetic ring in eccentric ring form having a coercive force greater than that of said first magnetic ring; and
a non-magnetic layer provided between said first and second magnetic rings.
- magneto-resistive memory elements on a semiconductor substrate, which are respectively placed in intersection regions of word lines and bit lines placed in the directions crossing each other and where first magnetic layers of which the direction of rotation of magnetization is variable and second magnetic layers of which the direction of rotation of magnetization is fixed are layered via non-magnetic intermediate layers; and
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeTohoku University National Universities Corporation
-
Original AssigneeKEIO University
-
InventorsSaitoh, Eiji, Miyajima, Hideki, Harii, Kazuya, Kawabata, Makoto
-
Primary Examiner(s)Nguyen, Viet Q.
-
Application NumberUS10/827,366Publication NumberTime in Patent Office672 DaysField of Search365/171, 365/173, 365/66, 365/51, 365/55US Class Current365/171CPC Class CodesG11C 11/155 with cylindrical configuration
