×

Semiconductor memory device which selectively controls a local input/output line sense amplifier

  • US 7,002,858 B2
  • Filed: 07/16/2004
  • Issued: 02/21/2006
  • Est. Priority Date: 07/24/2003
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor memory device which selectively controls a local input/output line sense amplifier, wherein the semiconductor memory device comprises:

  • a memory cell array block, which includes a local input/output line sense amplifier which operates in response to a sense amplifier enable signal;

    a redundancy circuit, which includes a redundancy local input/output line sense amplifier which operates in response to the sense amplifier enable signal;

    a switch unit, which selectively outputs data output from the local input/output line sense amplifier or the redundancy local input/output line sense amplifier in response to a first select signal and a second select signal; and

    a control unit which generates in response to the second select signal a sense amplifier operation control signal that disables the local input/output line sense amplifier, if the redundancy circuit operates.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×