Signal layer for generating characteristic optical plasma emissions

• US 7,005,305 B2
• Filed: 05/29/2003
• Issued: 02/28/2006
• Est. Priority Date: 11/29/2002
• Status: Active Grant

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Grasshoff, Gunter, Schwan, Christoph, Schaller, Matthias
• Primary Examiner(s): Norton, Nadine G.
• Assistant Examiner(s): Chen, Eric B.
• Application Number:
  US10/447,877
• Publication Number:
  US 20040106284A1
• Time in Patent Office: 1,006 Days
• Field of Search: 216/59, 216/60, 438/9, 438/16, 438/706, 438/710, 438/719, 438/720, 438/723
• US Class Current: 438/9
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

A technique is provided that may be used to improve optical endpoint detection in a plasma etch process. A semiconductor structure is manufactured that includes at least one electrical device. The technique is adapted for forming a signal layer on or in a wafer, wherein the signal layer comprises a chemical element that causes a characteristic optical emission when coming into contact with an etch plasma. The chemical element does not have a primary influence on the electrical properties of the electrical device. The signal layer is for use in a plasma etch process to detect a plasma etch endpoint if the characteristic optical emission is detected. The signal layer may be patterned and may be incorporated into a stop layer.

Claims

1. A method of manufacturing a semiconductor structure including at least one electrical device, the method comprising:

forming a patterned signal layer on or in a wafer, wherein said signal layer comprises strontium that causes a characteristic optical emission when coming into contact with an etch plasma, said chemical element having no primary influence on the electrical properties of said at least one electrical device;

applying an etch plasma to the surface of the wafer; and

performing a plasma etch endpoint process when said characteristic optical emission is detected.

2. The method of claim 1, wherein said signal layer is an etch stop layer, and said plasma etch endpoint process terminates the etch plasma to the surface of the wafer when said etch plasma comes into contact with said etch stop layer.

3. The method of claim 1, wherein said chemical element is selected to effect a characteristic optical emission having a characteristic optical spectrum not overlapping with a spectrum of an optical plasma emission effected by another chemical element present in said wafer.

4. The method of claim 1, wherein said chemical element is selected to effect no electrical degradation of an electrical conductance in said wafer.

5. The method of claim 1, wherein said chemical element is selected to have no mobility through other layers of said wafer.

6. The method of claim 1, wherein said at least one electrical device comprises an electrical integrated circuit.

7. The method of claim 1, wherein said characteristic optical emission is an optical emission having a characteristic spectrum.

8. The method of claim 7, wherein said characteristic spectrum substantially consists of one wavelength.

9. The method of claim 1, wherein said semiconductor structure is a multi-layer structure.

10. The method of claim 1, wherein forming said patterned signal layer comprises performing an ion implantation process to form said signal layer.

11. The method of claim 1, wherein said etch plasma is applied to the surface of said wafer to plasma etch at a defined etch rate, wherein said plasma etch endpoint process comprises reducing said etch rate.

12. The method of claim 1, wherein said etch plasma is applied to the surface of said wafer by adjusting plasma etch parameters, wherein said plasma etch endpoint process comprises adjusting at least one of said plasma etch parameters.

13. The method of claim 1, wherein the plasma etch rate of said signal layer is substantially the same as the plasma etch rate of the material adjacent to said signal layer.

14. A method of manufacturing a semiconductor structure, the method comprising:

forming a stop layer providing an etch plasma resistance effecting a low plasma etch rate, said stop layer comprising strontium, wherein said strontium causes a characteristic optical emission when coming into contact with an etch plasma, wherein forming said stop layer comprises performing an ion implantation process to form said stop layer;

applying an etch plasma to the surface of a wafer; and

performing a plasma etch endpoint process when said characteristic optical emission is detected.

15. The method of claim 14, wherein ions are implanted in a predefined area of said wafer to pattern said stop layer.

16. The method of claim 14, wherein said plasma etch endpoint process terminates the etch plasma when the etch plasma comes into contact with said strontium.

17. A method of manufacturing a semiconductor structure, the method comprising:

forming a signal layer on or in a wafer, wherein said signal layer is a patterned signal layer and wherein said patterned signal layer is located in a predefined area of said wafer that is selected to be an area having a reduced plasma etch rate;

applying an etch plasma to the surface of said wafer; and

performing a plasma etch endpoint process when a characteristic optical emission is detected,

wherein said characteristic optical emission is caused by a chemical element of said patterned signal layer when said chemical element comes into contact with said etch plasma.

18. A method of manufacturing a semiconductor structure including at least one electrical device, the method comprising:

forming a signal layer on or in a wafer, wherein said signal layer comprises strontium that causes a characteristic optical emission when coming into contact with an etch plasma, said strontium having no primary influence on the electrical properties of said at least one electrical device, wherein a plasma etch rate of said signal layer is substantially the same as a plasma etch rate of a material adjacent to said signal layer;

applying an etch plasma to the surface of the wafer; and

performing a plasma etch endpoint process when said characteristic optical emission is detected.

19. A method of manufacturing a semiconductor structure including at least one electrical device, the method comprising:

forming a signal layer on or in a wafer, wherein said signal layer comprises a chemical element that causes a characteristic optical emission when coming into contact with an etch plasma, said chemical element having no primary influence on the electrical properties of said at least one electrical device;

applying an etch plasma to the surface of the wafer; and

performing a plasma etch endpoint process when said characteristic optical emission is detected, wherein the plasma etch rate of said signal layer is substantially the same as the plasma etch rate of the material adjacent to said signal layer.

20. The method of claim 19, wherein said chemical element is strontium.

21. A method of manufacturing a semiconductor structure, the method comprising:

performing an ion implantation process to form a stop layer providing an etch plasma resistance effecting a low plasma etch rate, said stop layer comprising a chemical signal element, wherein said chemical signal element causes a characteristic optical emission when coming into contact with an etch plasma;

applying an etch plasma to the surface of a wafer; and

performing a plasma etch endpoint process when said characteristic optical emission is detected.

22. The method of claim 21, wherein ions are implanted in a predefined area of said wafer to pattern said stop layer.

23. A method of manufacturing a semiconductor structure including at least one electrical device, the method comprising:

forming a patterned signal layer on or in a wafer, wherein said signal layer comprises a chemical element that causes a characteristic optical emission when coming into contact with an etch plasma, said chemical element having no primary influence on the electrical properties of said at least one electrical device, and wherein forming said patterned signal layer comprises performing an ion implantation process to form said signal layer;

applying an etch plasma to the surface of the wafer; and

performing a plasma etch endpoint process when said characteristic optical emission is detected.

24. The method of claim 23, wherein the plasma etch rate of said signal layer is substantially the same as the plasma etch rate of the material adjacent to said signal layer.

25. A method of manufacturing a semiconductor structure including at least one electrical device, the method comprising:

forming a patterned signal layer on or in a wafer, wherein said signal layer comprises a chemical element that causes a characteristic optical emission when coming into contact with an etch plasma, said chemical element having no primary influence on the electrical properties of said at least one electrical device;

applying an etch plasma to the surface of the wafer, wherein the plasma etch rate of said signal layer is substantially the same as the plasma etch rate of the material adjacent to said signal layer; and

performing a plasma etch endpoint process when said characteristic optical emission is detected.