Method of manufacturing a thin film transistor array
First Claim
1. A method for manufacturing a thin film transistor array substrate, comprising the steps of:
- providing a substrate;
forming a first metal layer, a gate insulating layer, a semiconductor layer, an ohmic contact layer and a second metal layer over the substrate, and then carrying out a first patterning process to define a source/drain electrodes area, a scan line area, a data line area, a terminal contact area and a pixel area;
forming an interlayer insulating layer over the substrate, and carrying out a second patterning process to define a source/drain contact hole, a data line contact hole and a terminal contact hole; and
forming a transparent conductive layer, a third metal layer and a passivation layer to protect over the substrate and achieve electrical connections among the source/drain contact hole, the data line contact hole and the terminal contact hole, and then carrying out a third patterning process to form a thin film transistor, a scan line, a data line, a terminal contact and a pixel electrode.
2 Assignments
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Accused Products
Abstract
A method for manufacturing a thin film transistor array substrate is disclosed. A first metal layer, a gate insulating layer, a semiconductor layer, an ohmic contact layer and a second metal layer are sequentially formed over a substrate, and a first patterning process is carried out to define a source/drain electrodes area, a scan line area, a data line area, a terminal contact area and a pixel area. An interlayer insulating layer is formed, and a second patterning process is implemented to form a source/drain contact hole, a scan line contact hole and a terminal contact hole. A transparent conductive layer, a third metal layer and a passivation layer are sequentially formed over the substrate to achieve electrical contacts among above-mentioned contact holes, and a third patterning process is then implemented to form a thin film transistor, a scan line, a data line, a terminal contact and a pixel electrode.
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Citations
20 Claims
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1. A method for manufacturing a thin film transistor array substrate, comprising the steps of:
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providing a substrate; forming a first metal layer, a gate insulating layer, a semiconductor layer, an ohmic contact layer and a second metal layer over the substrate, and then carrying out a first patterning process to define a source/drain electrodes area, a scan line area, a data line area, a terminal contact area and a pixel area; forming an interlayer insulating layer over the substrate, and carrying out a second patterning process to define a source/drain contact hole, a data line contact hole and a terminal contact hole; and forming a transparent conductive layer, a third metal layer and a passivation layer to protect over the substrate and achieve electrical connections among the source/drain contact hole, the data line contact hole and the terminal contact hole, and then carrying out a third patterning process to form a thin film transistor, a scan line, a data line, a terminal contact and a pixel electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a thin film transistor array substrate, comprising the steps of:
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providing a substrate; forming a first metal layer, a gate insulating layer, a semiconductor layer, an ohmic contact layer and a second metal layer over the substrate, and then carrying out a first patterning process to define a source/drain electrodes area, a scan line area, a data line area, a terminal contact area and a pixel area; forming an interlayer insulating layer over the substrate, and carrying out a second patterning process to form a source/drain contact hole, a scan line contact hole and a terminal contact hole; and forming a transparent conductive layer, a third metal layer and a passivation layer to protect over the substrate and achieve electrical connections among the source/drain contact hole, the scan line contact hole and the terminal contact hole, and then carrying out a third patterning process to form a thin film transistor, a scan line, a data line, a terminal contact and a pixel electrode. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a thin film transistor array substrate, comprising the steps of:
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providing a substrate; forming a first metal layer, a gate insulating layer, a semiconductor layer, an ohmic contact layer and a second metal layer over the substrate, and then carrying out a first patterning process to define a source/drain electrodes area, a scan line area, a data line area, a terminal contact area and a pixel area; forming an interlayer insulating layer over the substrate, and carrying out a second patterning process to form a source/drain contact hole, a data line contact hole and a terminal contact hole; and forming a third metal layer and a passivation layer to protect over the substrate and achieve electrical connections among the source/drain contact hole, the data line contact hole and the terminal contact hole, and then carrying out a third patterning process to form a thin film transistor, a scan line, a data line, a terminal contact and a reflective pixel electrode. - View Dependent Claims (16, 17, 18)
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19. A method for manufacturing a TFT array substrate, comprising the steps of:
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providing a substrate; forming a first metal layer, a gate insulating layer, a semiconductor layer, an ohmic contact layer and a second metal layer over the substrate, and then carrying out a first patterning process to define a source/drain electrodes area, a scan line area, a data line area, a terminal contact area and a pixel area; forming an interlayer insulating layer over the substrate, and carrying out a second patterning process to form a source/drain contact hole, a scan line contact hole and a terminal contact hole; and forming at third metal layer and a passivation layer to protect over the substrate and achieve electrical connections among the source/drain contact hole, the scan line contact hole and the terminal contact hole, and then carrying out a third patterning process to form a thin film transistor, a scan line, a data line, a terminal contact and a reflective pixel electrode. - View Dependent Claims (20)
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Specification